High Frequency Gan Electronic Devices

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High Frequency Gan Electronic Devices

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Author : Patrick Fay
language : en
Publisher: Springer
Release Date : 2019-08-01

High Frequency Gan Electronic Devices written by Patrick Fay and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-01 with Technology & Engineering categories.

This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

Nitride Semiconductor Technology

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Author : Fabrizio Roccaforte
language : en
Publisher: Wiley-VCH
Release Date : 2020-08-24

Nitride Semiconductor Technology written by Fabrizio Roccaforte and has been published by Wiley-VCH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-08-24 with Technology & Engineering categories.

The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

Electrical And Electronic Devices Circuits And Materials

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Author : Suman Lata Tripathi
language : en
Publisher: CRC Press
Release Date : 2021-03-15

Electrical And Electronic Devices Circuits And Materials written by Suman Lata Tripathi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-15 with Technology & Engineering categories.

The increasing demand in home and industry for electronic devices has encouraged designers and researchers to investigate new devices and circuits using new materials that can perform several tasks efficiently with low IC (integrated circuit) area and low power consumption. Furthermore, the increasing demand for portable devices intensifies the search to design sensor elements, an efficient storage cell, and large-capacity memory elements. Electrical and Electronic Devices, Circuits and Materials: Design and Applications will assist the development of basic concepts and fundamentals behind devices, circuits, materials, and systems. This book will allow its readers to develop their understanding of new materials to improve device performance with even smaller dimensions and lower costs. Additionally, this book covers major challenges in MEMS (micro-electromechanical system)-based device and thin-film fabrication and characterization, including their applications in different fields such as sensors, actuators, and biomedical engineering. Key Features: Assists researchers working on devices and circuits to correlate their work with other requirements of advanced electronic systems. Offers guidance for application-oriented electrical and electronic device and circuit design for future energy-efficient systems. Encourages awareness of the international standards for electrical and electronic device and circuit design. Organized into 23 chapters, Electrical and Electronic Devices, Circuits and Materials: Design and Applications will create a foundation to generate new electrical and electronic devices and their applications. It will be of vital significance for students and researchers seeking to establish the key parameters for future work.

Gan Transistors For Efficient Power Conversion

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Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2019-09-30

Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-09-30 with Science categories.

An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion

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Author : Gaudenzio Meneghesso
language : en
Publisher: Springer
Release Date : 2018-05-12

Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion written by Gaudenzio Meneghesso and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-12 with Technology & Engineering categories.

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Advanced High Speed Devices

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Author : Michael S Shur
language : en
Publisher: World Scientific
Release Date : 2009-12-10

Advanced High Speed Devices written by Michael S Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-12-10 with Technology & Engineering categories.

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.

Gan Based Materials And Devices

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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004

Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.

The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Wide Energy Bandgap Electronic Devices

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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003

Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.

A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.

Optoelectronic Devices

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Author : M Razeghi
language : en
Publisher: Elsevier
Release Date : 2004

Optoelectronic Devices written by M Razeghi and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Nitride Wide Bandgap Semiconductor Material And Electronic Devices

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Author : Yue Hao
language : en
Publisher: CRC Press
Release Date : 2016-11-03

Nitride Wide Bandgap Semiconductor Material And Electronic Devices written by Yue Hao and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-03 with Computers categories.

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.