Electronic Characterization Of Defects In Narrow Gap Semiconductors
DOWNLOAD
Download Electronic Characterization Of Defects In Narrow Gap Semiconductors PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Electronic Characterization Of Defects In Narrow Gap Semiconductors book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Electronic Characterization Of Defects In Narrow Gap Semiconductors
DOWNLOAD
Author : National Aeronautics and Space Adm Nasa
language : en
Publisher:
Release Date : 2018-10-28
Electronic Characterization Of Defects In Narrow Gap Semiconductors written by National Aeronautics and Space Adm Nasa and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-28 with Science categories.
The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method. Patterson, James D. Unspecified Center...
Electronic Characterization Of Defects In Narrow Gap Semiconductors
DOWNLOAD
Author : National Aeronautics and Space Administration (NASA)
language : en
Publisher: Createspace Independent Publishing Platform
Release Date : 2018-07-06
Electronic Characterization Of Defects In Narrow Gap Semiconductors written by National Aeronautics and Space Administration (NASA) and has been published by Createspace Independent Publishing Platform this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-07-06 with categories.
The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity. Patterson, James D. and Li, Wei-Gang Unspecified Center...
Effect Of Disorder And Defects In Ion Implanted Semiconductors Optical And Photothermal Characterization
DOWNLOAD
Author :
language : en
Publisher: Academic Press
Release Date : 1997-06-12
Effect Of Disorder And Defects In Ion Implanted Semiconductors Optical And Photothermal Characterization written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-06-12 with Technology & Engineering categories.
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Device Physics Of Narrow Gap Semiconductors
DOWNLOAD
Author : Junhao Chu
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-10-13
Device Physics Of Narrow Gap Semiconductors written by Junhao Chu and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-10-13 with Technology & Engineering categories.
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.
Extended Defects In Semiconductors
DOWNLOAD
Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12
Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Physics And Properties Of Narrow Gap Semiconductors
DOWNLOAD
Author : Junhao Chu
language : en
Publisher: Springer
Release Date : 2010-11-29
Physics And Properties Of Narrow Gap Semiconductors written by Junhao Chu and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-11-29 with Science categories.
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Characterization Of Trapping States In Semiconductors
DOWNLOAD
Author : Harvey Small Hopkins
language : en
Publisher:
Release Date : 1981
Characterization Of Trapping States In Semiconductors written by Harvey Small Hopkins and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Semiconductors categories.
Defect energy states within the band gap are known to affect the performance of semiconductors in terms of response time. The characterization of defects is the first step in understanding how they act and how one may use them to benefit diode performance. Characterization of a defect includes among other quantities, the energy difference from the band edge, and the capture cross section of the energy state. Deep Level Transient Spectroscopy (DLTS) is a very powerful experimental method using the transient capacitance properties reverse-biased p-n junction diodes to characterize defects. A particular electron trap in n-type GaAlAs, known as the DX center is studied in this report using two different DLTS experimental setups. A complex model is proposed for the DX center consisting of a group plus an excited state with independent capture cross sections and communication between the two levels. Since classical analysis of DLTS data yields misleading results when a complex trap is considered, a computer simulation and curve fitting technique was used to determine the trap structure and parameters. This technique gave values of .295 eV for the ground state energy, .219 eV for the excited state, prefactor values on the ground, excited, and communication prefactor of 1.02 x 10 to the 7th, 2.2 x 10 to the 8th and 5.58 x 10 to the 5th, respectively. (Author).
Narrow Gap Semiconductors 1995
DOWNLOAD
Author : J.L Reno
language : en
Publisher: CRC Press
Release Date : 2020-11-25
Narrow Gap Semiconductors 1995 written by J.L Reno and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-11-25 with Science categories.
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Iii Nitride Semiconductors
DOWNLOAD
Author : M.O. Manasreh
language : en
Publisher: Elsevier
Release Date : 2000-12-06
Iii Nitride Semiconductors written by M.O. Manasreh and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-06 with Science categories.
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Scientific And Technical Aerospace Reports
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 1995
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Aeronautics categories.
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.