Electronic Process In Inp And Related Compounds
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Electronic Processes In Inp And Related Compounds
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Author : K. V. Vaidyanathan
language : en
Publisher:
Release Date : 1979
Electronic Processes In Inp And Related Compounds written by K. V. Vaidyanathan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1979 with categories.
An experimental system to measure ionization coefficients in InP and related compounds is described. The growth of high purity liquid phase epitaxial InP is described and the properties of such layers discussed. (Author).
Electronic Process In Inp And Related Compounds
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Author : K. V. Vaidyanathan
language : en
Publisher:
Release Date : 1980
Electronic Process In Inp And Related Compounds written by K. V. Vaidyanathan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1980 with categories.
An experimental system to measure ionization coefficients in InP and related compounds is described. The current-voltage characteristics of Schottky barriers on p-type InP are presented. A set of masks designed to fabricate guarded Schottky diodes for making ionization coefficient measurements is described. (Author).
Inp And Related Compounds
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Author : M O Manasreh
language : en
Publisher: CRC Press
Release Date : 2014-04-21
Inp And Related Compounds written by M O Manasreh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-04-21 with Technology & Engineering categories.
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Inp And Related Compounds
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Author : M O Manasreh
language : en
Publisher: CRC Press
Release Date : 2000-08-08
Inp And Related Compounds written by M O Manasreh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-08-08 with Technology & Engineering categories.
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Scientific And Technical Aerospace Reports
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Author :
language : en
Publisher:
Release Date : 1995
Scientific And Technical Aerospace Reports written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Aeronautics categories.
Inp Based Materials And Devices
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Author : Osamu Wada
language : en
Publisher: Wiley-Interscience
Release Date : 1999-04-13
Inp Based Materials And Devices written by Osamu Wada and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-04-13 with Science categories.
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Electronic Properties Of Multilayers And Low Dimensional Semiconductor Structures
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Author : J.M. Chamberlain
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Electronic Properties Of Multilayers And Low Dimensional Semiconductor Structures written by J.M. Chamberlain and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
Handbook Of Compound Semiconductors
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Author : Paul H. Holloway
language : en
Publisher: Cambridge University Press
Release Date : 2008-10-19
Handbook Of Compound Semiconductors written by Paul H. Holloway and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-10-19 with Technology & Engineering categories.
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Dissertation Abstracts International
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Author :
language : en
Publisher:
Release Date : 1998
Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Dissertations, Academic categories.
Device And Circuit Cryogenic Operation For Low Temperature Electronics
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Author : Francis Balestra
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Device And Circuit Cryogenic Operation For Low Temperature Electronics written by Francis Balestra and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.
Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.