Electronic Structure Of Semiconductor Interfaces
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Electronic Structure Of Semiconductor Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Nature
Release Date : 2024-06-14
Electronic Structure Of Semiconductor Interfaces written by Winfried Mönch and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-06-14 with Science categories.
This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.
Semiconductor Surfaces And Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Semiconductor Surfaces And Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.
Electronic Structure Of Disordered Alloys Surfaces And Interfaces
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Author : Ilja Turek
language : en
Publisher: Springer Science & Business Media
Release Date : 1997
Electronic Structure Of Disordered Alloys Surfaces And Interfaces written by Ilja Turek and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Science categories.
An introduction to the study of basic electronic and magnetic properties of complex materials such as alloys, their surfaces, interfaces, and extended defects. Part I explores theoretical background, with chapters on the linear muffin-tin orbital method, Green function method, coherent potential approximation, self- consistency within atomic sphere approximation, and relativistic theory. Part II is devoted to applications including magnetic properties, numerical implementation, and interatomic interactions in alloys. Of interest to researchers in solid state theory, surface science, and computational materials research. Annotation copyrighted by Book News, Inc., Portland, OR.
Electronic Structure Of Semiconductor Heterojunctions
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Author : Giorgio Margaritondo
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Electronic Structure Of Semiconductor Heterojunctions written by Giorgio Margaritondo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
Electronic Structure Of Metal Semiconductor Contacts
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Electronic Structure Of Metal Semiconductor Contacts written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces
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Author : Carl Wilmsen
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces written by Carl Wilmsen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Electronic Structure Of Semiconductor Interfaces
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Author : F. Herman
language : en
Publisher:
Release Date : 1984
Electronic Structure Of Semiconductor Interfaces written by F. Herman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with categories.
This report concerns theoretical studies of the electronic structure of various types of interfaces, including (a) interfaces between different semiconductors, such as Ge and GaAs; (b) interfaces between semiconductors and insulators, such as Si and Si02 (c) interfaces between metals and semiconductors, such as Pd2Si and Si; (d) interfaces between crystalline and amorphous semiconductors; and (e) interfaces between ferromagnetic and antiferromagnetic metals, such as Permalloy/MnFe and Co/Cr. The overall goal was to elucidate the inter-relationship between the atomic-scale structure of interfaces and their electronic, optical, and magnetic characteristics. For some of these systems, the effects of structural an chemical imperfectious on interfacial properties were taken into account explicitly. Theoretical results were related to relevant experimental information where possible. This Final general approach, the principal conclusions, and where the subject stands today. Additional information may be found in the six representative research papers and reviews that are reproduced in the Appendices.
Electronic Properties Of Semiconductor Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Electronic Properties Of Semiconductor Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Control Of Semiconductor Interfaces
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Author : I. Ohdomari
language : en
Publisher: Elsevier
Release Date : 2017-05-03
Control Of Semiconductor Interfaces written by I. Ohdomari and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-05-03 with Science categories.
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization.A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
Industrial Applications Of Ultrafast Lasers
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Author : Richard A Haight
language : en
Publisher: World Scientific
Release Date : 2018-03-16
Industrial Applications Of Ultrafast Lasers written by Richard A Haight and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-03-16 with Science categories.
This book describes the application of ultrafast laser science and technology in materials and processing relevant to industry today, including ultrafast laser ablation where fundamental studies have led to the development of the world's first femtosecond photomask repair tool. Semiconductor manufacturing companies worldwide use the tool to repair photomask defects, saving hundreds of millions in production costs. The most up-to-date ultrafast laser technologies are described and methods to generate high harmonics for photoelectron spectroscopy of industrially important materials are covered, with an emphasis on practical laboratory implementation. Basic device physics merged with photoemission studies from single- and polycrystalline materials are described. Extensions to new methods for extracting key device properties of metal-oxide-semiconductor structures, including band offsets, effective work functions, semiconductor band bending and defect-related charging in a number of technologically important gate oxides are detailed. Polycrystalline photovoltaic materials and heterostructures as well as organic light emitting materials are covered. This book describes both the history, and most recent applications of ultrafast laser science to industrially relevant materials, processes and devices.