Epitaxial Graphene On Silicon Carbide
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Epitaxial Graphene On Silicon Carbide
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Author : Gemma Rius
language : en
Publisher: CRC Press
Release Date : 2018-01-19
Epitaxial Graphene On Silicon Carbide written by Gemma Rius and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-01-19 with Science categories.
This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Epitaxial Graphene On Silicon Carbide
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Author : Gemma Rius
language : en
Publisher: Jenny Stanford Publishing
Release Date : 2018-01-31
Epitaxial Graphene On Silicon Carbide written by Gemma Rius and has been published by Jenny Stanford Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-01-31 with SCIENCE categories.
"This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum-processing, partial-pressure, or graphite cap controlled-sublimation techniques. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia."--Provided by publisher.
Epitaxial Graphene On Silicon Carbide
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Author : Michael W. Sprinkle
language : en
Publisher:
Release Date : 2010
Epitaxial Graphene On Silicon Carbide written by Michael W. Sprinkle and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Epitaxy categories.
In the past several years, epitaxial graphene on silicon carbide has been transformed from an academic curiosity of social scientists to a leading candidate material to replace silicon in post-CMOS electronics. This has come with rapid development of growth technologies, improved understanding of epitaxial graphene on the polar faces of silicon carbide, and new device fabrication techniques. The contributions of this thesis include refinement and improved understanding of graphene growth on the silicon- and carbon-faces in the context of managed local silicon partial pressure, high-throughput epitaxial graphene thickness measurement and uniformity characterization by ellipsometry, observations of nearly ideal graphene band structures on rotationally stacked carbon-face multilayer epitaxial graphene, presentation of initial experiments on localized in situ chemical modification of epitaxial graphene for an alternate path to semiconducting behavior, and novel device fabrication methods to exploit the crystal structure of the silicon carbide substrate. The latter is a particularly exciting foray into three dimensional patterning of the substrate that may eliminate the critical problem of edge roughness in graphene nanoribbons.
Epitaxial Graphene On Silicon Carbide Surfaces
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Author : Christian Riedl
language : en
Publisher:
Release Date : 2010
Epitaxial Graphene On Silicon Carbide Surfaces written by Christian Riedl and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Characterization Of Selective Epitaxial Graphene Growth On Silicon Carbide
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Author : Farhana Zaman
language : en
Publisher:
Release Date : 2012
Characterization Of Selective Epitaxial Graphene Growth On Silicon Carbide written by Farhana Zaman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Epitaxy categories.
The need for post-CMOS nanoelectronics has led to the investigation of innovative device structures and materials. Graphene, a zero bandgap semiconductor with ballistic transport properties, has great potential to extend diversification and miniaturization beyond the limits of CMOS. The goal of this work is to study the growth of graphene on SiC using the novel method of selective graphitization. The major contributions of this research are as follows - First, epitaxial graphene is successfully grown on selected regions of SiC not capped by AlN deposited by molecular beam epitaxy. This contribution enables the formation of electronic-grade graphene in desired patterns without having to etch the graphene or expose it to any detrimental contact with external chemicals. Etching of AlN opens up windows to the SiC in desirable patterns for subsequent graphitization without leaving etch-residues (determined by XPS). Second, the impact of process parameters on the growth of graphene is investigated. Temperature, time, and argon pressure are the primary growth-conditions altered. A temperature of 1400oC in 1 mbar argon for 20 min produced the most optimal graphene growth without significant damage to the AlN capping-layer. Third, first-ever electronic transport measurements are achieved on the selective epitaxial graphene. Hall mobility of about 1550 cm2/Vs has been obtained to date. Finally, the critical limitations of the selective epitaxial graphene growth are enumerated. The advent of enhanced processing techniques that will overcome these limitations will create a multitude of opportunities for applications for graphene grown in this manner. It is envisaged to be a viable approach to fabrication of radio-frequency field-effect transistors.
Quantum Transport In Epitaxial Graphene On Silicon Carbide 0001
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Author : Johannes Jobst
language : en
Publisher:
Release Date : 2013-02-28
Quantum Transport In Epitaxial Graphene On Silicon Carbide 0001 written by Johannes Jobst and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-02-28 with categories.
Interface Between Epitaxial Graphene And Silicon Carbide A First Principl Study
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Author : Julie Risse
language : en
Publisher:
Release Date : 2009
Interface Between Epitaxial Graphene And Silicon Carbide A First Principl Study written by Julie Risse and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Polarization Doping And Work Function Of Epitaxial Graphene On Silicon Carbide
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Author : Samir Mammadov
language : en
Publisher:
Release Date : 2019*
Polarization Doping And Work Function Of Epitaxial Graphene On Silicon Carbide written by Samir Mammadov and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019* with categories.
Growth And Electronic Properties Of Nanostructured Epitaxial Graphene On Silicon Carbide
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Author : David Britt Torrance
language : en
Publisher:
Release Date : 2013
Growth And Electronic Properties Of Nanostructured Epitaxial Graphene On Silicon Carbide written by David Britt Torrance and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with Graphene categories.
The two-dimensional phase of carbon known as graphene is actively being pursued as a primary material in future electronic devices. The goals of this thesis are to investigate the growth and electronic properties of epitaxial graphene on SiC, with a particular focus on nanostructured graphene. The first part of this thesis examines the kinetics of graphene growth on SiC(0001) and SiC(0001 Ì ...) by high-temperature sublimation of the substrate using a custom-built, ultra-high vacuum induction furnace. A first-principles kinetic theory of silicon sublimation and mass-transfer is developed to describe the functional dependence of the graphene growth rate on the furnace temperature and pressure. This theory can be used to calibrate other graphene growth furnaces which employ confinement controlled sublimation. The final chapter in this thesis involves a careful study of self-organized epitaxial graphene nanoribbons (GNRs) on SiC(0001). Scanning tunneling microscopy of the sidewall GNRs confirms that these self-organized nanostructures are susceptible to overgrowth onto nearby SiC terraces. Atomic-scale imaging of the overgrown sidewall GNRs detected local strained regions in the nanoribbon crystal lattice, with strain coefficients as high as 15%. Scanning tunneling spectroscopy (STS) of these strained regions demonstrate that the graphene electronic local density of states is strongly affected by distortions in the crystal lattice. Room temperature STS in regions with a large strain gradient found local energy gaps as high as 400 meV. Controllable, strain-induced quantum states in epitaxial graphene on SiC could be utilized in new electronic devices.
Free Standing Epitaxial Graphene On Silicon Carbide And Transport Barriers In Layered Materials
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Author : Shriram Shivaraman
language : en
Publisher:
Release Date : 2013
Free Standing Epitaxial Graphene On Silicon Carbide And Transport Barriers In Layered Materials written by Shriram Shivaraman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
This thesis is based on the topic of layered materials, in which different layers interact with each other via van der Waals forces. The majority of this thesis deals with epitaxial graphene (EG) obtained from silicon carbide (SiC). Free-standing epitaxial graphene (FSEG) structures are produced from EG using a photoelectrochemical (PEC) etching process developed for making suspended graphene structures on a large-scale. These structures are investigated for their mechanical and electrical properties. For doubly-clamped FSEG structures, a unique U-beam effect is observed which causes orders of magnitude increase in their mechanical resonance frequency compared to that expected using simple beam theory. Combined magnetotransport and Raman spectroscopy studies reveal that FSEG devices produced from nominally monolayer graphene on the Si-face of SiC exhibit properties of an inhomogeneously doped bilayer after becoming suspended. This suggests that the buffer layer which precedes graphene growth on the Si-face of SiC gets converted to a graphene layer after the PEC etching process. In the second theme of this thesis, transport barriers in layered materials are investigated. The EG-SiC interface is studied using a combination of electrical (I-V, C-V) and photocurrent spectroscopy techniques. It is shown that the interface may be described as having a Schottky barrier for electron transport with a Gaussian distribution of barrier heights. Another interface explored in this work is that between different layers of MoS2, a layered material belonging to the class of transition metal dichalcogenides. This interface maybe thought of as a one-dimensional junction. Fourpoint transport measurements indicate the presence of a barrier for electron transport at this interface. A simple model of the junction as a region with an increased threshold voltage and degraded mobility is suggested. The final chapter is a collection of works based on the topic of layered materials, which are not related to the main theme of the thesis. They include fabrication and characterization details of a dual-gated bilayer graphene device, an investigation of the graphene-Si interface and hexagonal boron nitride-based membranes. These are presented in the hope that they may be useful for further investigations along those directions.