Epitaxial Graphene On Silicon Carbide Surfaces
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Epitaxial Graphene On Silicon Carbide Surfaces
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Author : Christian Riedl
language : en
Publisher:
Release Date : 2010
Epitaxial Graphene On Silicon Carbide Surfaces written by Christian Riedl and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Epitaxial Graphene On Silicon Carbide
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Author : Gemma Rius
language : en
Publisher: CRC Press
Release Date : 2018-01-19
Epitaxial Graphene On Silicon Carbide written by Gemma Rius and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-01-19 with Science categories.
This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Epitaxial Graphene On Silicon Carbide
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Author : Gemma Rius
language : en
Publisher: Jenny Stanford Publishing
Release Date : 2018-01-31
Epitaxial Graphene On Silicon Carbide written by Gemma Rius and has been published by Jenny Stanford Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-01-31 with SCIENCE categories.
"This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum-processing, partial-pressure, or graphite cap controlled-sublimation techniques. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia."--Provided by publisher.
Structured Epitaxial Graphene For Electronics
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Author : Ming Ruan
language : en
Publisher:
Release Date : 2012
Structured Epitaxial Graphene For Electronics written by Ming Ruan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Electronics categories.
After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. One disadvantage of conventionally fabricated graphene devices is that nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. The other disadvantage is that pristine graphene does not contain a band gap, which is critical for standard field effect transistor to operate. This thesis will show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. High-quality ribbons and rings can be made using this technique.
Graphene Engineering
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Author : Lydia Nemec
language : en
Publisher:
Release Date : 2015
Graphene Engineering written by Lydia Nemec and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
Surface Studies Of Epitaxial Graphene On Sic
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Author : Ameer Al-Temimy
language : en
Publisher:
Release Date : 2009
Surface Studies Of Epitaxial Graphene On Sic written by Ameer Al-Temimy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Epitaxial Graphene On Silicon Carbide
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Author : Gemma Rius
language : en
Publisher: CRC Press
Release Date : 2018-01-19
Epitaxial Graphene On Silicon Carbide written by Gemma Rius and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-01-19 with Science categories.
This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Thermoelectric Characterization Of Large Area Graphene Grown On Silicon Carbide
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Author : Ruwantha Jayasingha Atapattu Mudiyaneselage
language : en
Publisher:
Release Date : 2010
Thermoelectric Characterization Of Large Area Graphene Grown On Silicon Carbide written by Ruwantha Jayasingha Atapattu Mudiyaneselage and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Electroplating categories.
The thermoelectric power (TEP) and sheet resistance of epitaxial graphene were measured in the temperature range from 300 K to 500 K. Using thermal decomposition of 4H-SiC in an induction furnace, graphene multilayers were grown on the carbon terminated surfaces (C-face) while mono and bilayer graphene films were grown on the silicon terminated surfaces (Si-face). The electrostatic removal (ESR) technique was used to reduce the number of graphene layers from the C-face samples. The application of the electrostatic removal method allows us to achieve monolayer graphene on the C-face substrates. All investigated multilayer graphene samples showed a positive Seebeck coefficient in ambient conditions at 300 K and turned negative after vacuum annealing at a pressure of ~2 x 10 −7 Torr and a temperature of 500 K. Monolayer graphene on C-faces showed a relatively small positive Seebeck coefficient under ambient conditions and an even greater negative Seebeck coefficient after vacuum annealing. The oxygen doping is found to be responsible for the observed positive thermopower. Electrons are transferred from graphene to a redox couple associated with mildly acidic moisture (water) and oxygen. The charge transfer mechanism is proposed to be electrochemically mediated. We also measured the response of thermoelectric power while exposing the annealed graphene to various gases. The negative behavior for the degassed graphene is speculated to be due to the pinning of the Fermi energy at a state associate with the dangling bonds of the SiC surface. Si-face terminated graphene is found to have no effect with ambient doping. However, it was easily doped by electrochemical top gating. The sign of the thermoelectric power could be reversed by tuning the top gate voltage.
Application Of Epitaxial Graphene Layers On Silicon Carbide In The Technology Of Semiconductor Devices
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Author : Tymoteusz Ciuk
language : en
Publisher:
Release Date : 2016
Application Of Epitaxial Graphene Layers On Silicon Carbide In The Technology Of Semiconductor Devices written by Tymoteusz Ciuk and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Growing Graphene On Semiconductors
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Author : Nunzio Motta
language : en
Publisher: CRC Press
Release Date : 2017-09-08
Growing Graphene On Semiconductors written by Nunzio Motta and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-09-08 with Science categories.
Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement. The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures.