Structured Epitaxial Graphene For Electronics
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Structured Epitaxial Graphene For Electronics
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Author : Ming Ruan
language : en
Publisher:
Release Date : 2012
Structured Epitaxial Graphene For Electronics written by Ming Ruan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Electronics categories.
After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. One disadvantage of conventionally fabricated graphene devices is that nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. The other disadvantage is that pristine graphene does not contain a band gap, which is critical for standard field effect transistor to operate. This thesis will show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. High-quality ribbons and rings can be made using this technique.
Growth And Electronic Properties Of Nanostructured Epitaxial Graphene On Silicon Carbide
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Author : David Britt Torrance
language : en
Publisher:
Release Date : 2013
Growth And Electronic Properties Of Nanostructured Epitaxial Graphene On Silicon Carbide written by David Britt Torrance and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with Graphene categories.
The two-dimensional phase of carbon known as graphene is actively being pursued as a primary material in future electronic devices. The goals of this thesis are to investigate the growth and electronic properties of epitaxial graphene on SiC, with a particular focus on nanostructured graphene. The first part of this thesis examines the kinetics of graphene growth on SiC(0001) and SiC(0001 Ì ...) by high-temperature sublimation of the substrate using a custom-built, ultra-high vacuum induction furnace. A first-principles kinetic theory of silicon sublimation and mass-transfer is developed to describe the functional dependence of the graphene growth rate on the furnace temperature and pressure. This theory can be used to calibrate other graphene growth furnaces which employ confinement controlled sublimation. The final chapter in this thesis involves a careful study of self-organized epitaxial graphene nanoribbons (GNRs) on SiC(0001). Scanning tunneling microscopy of the sidewall GNRs confirms that these self-organized nanostructures are susceptible to overgrowth onto nearby SiC terraces. Atomic-scale imaging of the overgrown sidewall GNRs detected local strained regions in the nanoribbon crystal lattice, with strain coefficients as high as 15%. Scanning tunneling spectroscopy (STS) of these strained regions demonstrate that the graphene electronic local density of states is strongly affected by distortions in the crystal lattice. Room temperature STS in regions with a large strain gradient found local energy gaps as high as 400 meV. Controllable, strain-induced quantum states in epitaxial graphene on SiC could be utilized in new electronic devices.
Electronic Structure Of Epitaxial Graphene Sic By Protin Irradiation
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Author : 吳祥寧
language : en
Publisher:
Release Date : 2011
Electronic Structure Of Epitaxial Graphene Sic By Protin Irradiation written by 吳祥寧 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Growing Graphene On Semiconductors
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Author : Nunzio Motta
language : en
Publisher: CRC Press
Release Date : 2017-09-08
Growing Graphene On Semiconductors written by Nunzio Motta and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-09-08 with Science categories.
Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement. The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures.
Graphene Nanoelectronics
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Author : Raghu Murali
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-03-09
Graphene Nanoelectronics written by Raghu Murali and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-03-09 with Technology & Engineering categories.
Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and the potential benefits of using graphene in a wide variety of electronic applications. The book also provides details on various methods to grow graphene, including epitaxial, CVD, and chemical methods. This book serves as a spring-board for anyone trying to start working on graphene. The book is also suitable to experts who wish to update themselves with the latest findings in the field.
Epitaxial Graphene On Silicon Carbide
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Author : Gemma Rius
language : en
Publisher: CRC Press
Release Date : 2018-01-19
Epitaxial Graphene On Silicon Carbide written by Gemma Rius and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-01-19 with Science categories.
This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Recent Advances In Graphene Research
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Author : Pramoda Kumar Nayak
language : en
Publisher: BoD – Books on Demand
Release Date : 2016-10-12
Recent Advances In Graphene Research written by Pramoda Kumar Nayak and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-12 with Technology & Engineering categories.
This book ''Recent Advances in Graphene Research'' provides a state-of-the-art report of the knowledge accumulated in graphene research. It contains 12 chapters divided into three sections. Section 1 ''Fundamentals of Graphene'' deals with quantum hall effect in graphene, electronic properties of carbon nanostructures and spectral statistics of graphene nanoflakes. In Section 2 ''Graphene Synthesis,'' the optimized synthesis procedures of graphene and its derivatives are presented. The application of graphene and its nanostructured-based materials for energy storage, conservation and other extensive applications are described in Section 3 ''Application of Graphene and its Nanostructures''. We believe that this book offers broader prospective to the readers in the recent advances in graphene research, starting from fundamental science to application.
Microscopic And Spectroscopic Studies Of Growth And Electronic Structure Of Epitaxial Graphene
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Author : Nikhil Sharma
language : en
Publisher:
Release Date : 2009
Microscopic And Spectroscopic Studies Of Growth And Electronic Structure Of Epitaxial Graphene written by Nikhil Sharma and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Epitaxy categories.
It is generally believed that the Si technology is going to hit a road block soon. Amongst all the potential candidates, graphene shows the most promise as replacement material for the aging Si technology. This has caused a tremendous stir in the scientific community. This excitement stems from the fact that graphene exhibits unique electronic properties. Physically, it is a two-dimensional network of sp2́2bonded carbon atoms. The unique symmetry of two equivalent sublattices gives rise to a linear energy dispersion for the charge carriers. As a consequence, the charge carriers behave like massless Dirac particles with a constant speed of c/300, where c is the speed of light. The sublattice symmetry gives rise to unique half-integer quantum hall effect, Klein's paradox, and weak antilocalization.
Graphene
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Author : Viera Skakalova
language : en
Publisher: Elsevier
Release Date : 2014-02-16
Graphene written by Viera Skakalova and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-02-16 with Technology & Engineering categories.
Graphene: Properties, Preparation, Characterisation and Devices reviews the preparation and properties of this exciting material. Graphene is a single-atom-thick sheet of carbon with properties, such as the ability to conduct light and electrons, which could make it potentially suitable for a variety of devices and applications, including electronics, sensors, and photonics. Chapters in part one explore the preparation of , including epitaxial growth of graphene on silicon carbide, chemical vapor deposition (CVD) growth of graphene films, chemically derived graphene, and graphene produced by electrochemical exfoliation. Part two focuses on the characterization of graphene using techniques including transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy. These chapters also discuss photoemission of low dimensional carbon systems. Finally, chapters in part three discuss electronic transport properties of graphene and graphene devices. This part highlights electronic transport in bilayer graphene, single charge transport, and the effect of adsorbents on electronic transport in graphene. It also explores graphene spintronics and nano-electro-mechanics (NEMS). Graphene is a comprehensive resource for academics, materials scientists, and electrical engineers working in the microelectronics and optoelectronics industries. Explores the graphene preparation techniques, including epitaxial growth on silicon carbide, chemical vapor deposition (CVD), chemical derivation, and electrochemical exfoliation Focuses on the characterization of graphene using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy A comprehensive resource for academics, materials scientists, and electrical engineers
Epitaxial Graphene On Siiicon Carbide
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Author : Sang Won Lee
language : en
Publisher:
Release Date : 2012
Epitaxial Graphene On Siiicon Carbide written by Sang Won Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
The discovery of free-standing graphene in 2004 has attracted wide attention in both scientific community and industry because of its unusual electronic structure and properties. Due to the possible applications of graphene, many attempts to produce high-quality wafer-scale graphene films have been actively tried in the materials science and other scientific communities. Thermal decomposition of silicon carbide (SiC) is currently considered as one of the most promising routes toward the synthesis of well-controlled and characterized graphene films for electronic applications. This thesis focuses on the synthesis, structure and properties of epitaxial graphene on SiC. In the first chapter, I will investigate the structural properties of EG layers grown on the C-face of 4H-SiC in vacuum or Ar environments using synchrotron-based X-ray diffraction. The qualities and characteristics of layers will be also correlated with carrier mobilities obtained from Hall measurements. Since the Ar atmosphere produced higher quality graphene films on SiC than in vacuum, the inert-gas mediated thermal decomposition of SiC is regarded so far as the most effective method for the controlled EG growth. However, most studies have been done on the Si-face of SiC because of its slower reaction kinetics, which results in relatively uniform film thickness compared to the C-face. Nevertheless, there is significant interest in the C-face of SiC due to the superior electrical properties of EG grown on C-face SiC as compared to that grown on the Si-face. We find that Ar background pressure produces uniform graphene films on the C-face and the electronic properties (i.e. carrier mobility) of the films surpass that of vacuum-grown films due to larger crystalline domains formed in EG when the Ar pressure is above a certain threshold. In the second chapter, I will propose an alternative low-temperature, spatially controlled and scalable epitaxial graphene synthesis technique based on laser-induced surface decomposition of SiC. The high temperatures required in the conventional method are not compatible with large-scale device integration where different materials must be deposited and patterned prior to the formation of the semiconductor layer and limit the synthesis to single-crystal SiC substrates. Our technique is compatible with large-scale device integration. Furthermore, laser synthesis of graphene offers the advantage of combining synthesis and patterning in one step as the process can be designed to form graphene devices in predetermined locations on the substrate. In the last chapter, I will compare the structural properties of laser-synthesized EG on the Si-face and on the C-face of SiC. EG films on the C-face of 4H-SiC were successfully synthesized without the formation of carbon nanotubes by our laser technique, which are usually observed on the C-face upon vacuum high temperature anneals. The structural properties of these films were investigated by grazing incidence X-ray diffraction (GIXD) using synchrotron radiation and transmission electron microscopy. Since the graphene formation by UV laser irradiation is partially a photophysical process, I will illustrate the structural implications of the differences between the two formation processes.