Surface Studies Of Epitaxial Graphene On Sic
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Surface Studies Of Epitaxial Graphene On Sic
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Author : Ameer Al-Temimy
language : en
Publisher:
Release Date : 2009
Surface Studies Of Epitaxial Graphene On Sic written by Ameer Al-Temimy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Epitaxial Graphene On Silicon Carbide
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Author : Gemma Rius
language : en
Publisher: CRC Press
Release Date : 2018-01-19
Epitaxial Graphene On Silicon Carbide written by Gemma Rius and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-01-19 with Science categories.
This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Epitaxial Graphene On Silicon Carbide
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Author : Gemma Rius
language : en
Publisher: Jenny Stanford Publishing
Release Date : 2018-01-31
Epitaxial Graphene On Silicon Carbide written by Gemma Rius and has been published by Jenny Stanford Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-01-31 with SCIENCE categories.
"This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum-processing, partial-pressure, or graphite cap controlled-sublimation techniques. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia."--Provided by publisher.
Electronic Band Engineering In Epitaxial Graphene
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Author : Hansika Iroshini Sirikumara
language : en
Publisher:
Release Date : 2014
Electronic Band Engineering In Epitaxial Graphene written by Hansika Iroshini Sirikumara and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
In this research work, we have investigated the band engineering of epitaxial graphene using first principles calculations. Epitaxial graphene on SiC (0001) surface is modified by using different methods such as intercalation, doping, passivation and oxidation. The calculations are done using Density functional theory which is implemented in quantum espresso package. In the presence of H intercalation, epitaxial graphene is shown to have p type behavior with monolayer graphene. However this behavior is different for multilayer epitaxial graphene systems, and it depended on the concentration of the H atoms. When epitaxial graphene is intercalated with Ge atoms, the Ge atoms make clusters and these clusters are responsible for the electronic properties of the epitaxial graphene systems. As a result of oxidation of epitaxial SiC surface, the graphene layer is mostly stable on the surface for both silicates and oxynitrides structures. For silicate/SiC configurations, the epitaxial graphene is shown to be less n type. For oxynitrides/ SiC configurations, epitaxial graphene is shown to be neutral. In the presence of oxygen intercalation with silicate/SiC, epitaxial graphene is shown to have p type behavior. These systematic studies of epitaxial graphene will opens up great potential for electronic applications. Additionally the resultant models can be used to guide further studies.
Electronic Band Engineering In Epitaxial Graphene B First Principles Calculations
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Author : Hansika Iroshini Sirikumara (‡e author)
language : en
Publisher:
Release Date : 2014
Electronic Band Engineering In Epitaxial Graphene B First Principles Calculations written by Hansika Iroshini Sirikumara (‡e author) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with Condensed matter categories.
In this research work, we have investigated the band engineering of epitaxial graphene using first principles calculations. Epitaxial graphene on SiC (0001) surface is modified by using different methods such as intercalation, doping, passivation and oxidation. The calculations are done using Density functional theory which is implemented in quantum espresso package. In the presence of H intercalation, epitaxial graphene is shown to have p type behavior with monolayer graphene. However this behavior is different for multilayer epitaxial graphene systems, and it depended on the concentration of the H atoms. When epitaxial graphene is intercalated with Ge atoms, the Ge atoms make clusters and these clusters are responsible for the electronic properties of the epitaxial graphene systems. As a result of oxidation of epitaxial SiC surface, the graphene layer is mostly stable on the surface for both silicates and oxynitrides structures. For silicate/SiC configurations, the epitaxial graphene is shown to be less n type. For oxynitrides/ SiC configurations, epitaxial graphene is shown to be neutral. In the presence of oxygen intercalation with silicate/SiC, epitaxial graphene is shown to have p type behavior. These systematic studies of epitaxial graphene will opens up great potential for electronic applications. Additionally the resultant models can be used to guide further studies.
Functionalized Epitaxial Graphene As Versatile Platform For Air Quality Sensors
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Author : Marius Rodner
language : en
Publisher: Linköping University Electronic Press
Release Date : 2021-04-12
Functionalized Epitaxial Graphene As Versatile Platform For Air Quality Sensors written by Marius Rodner and has been published by Linköping University Electronic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-04-12 with categories.
The work presented in this thesis focuses on epitaxial graphene on SiC as a platform for air quality sensors. Several approaches have been tested and evaluated to increase the sensitivity, selectivity, speed of response and stability of the sensors. The graphene surfaces have been functionalized, for example, with different metal oxide nanoparticles and nanolayers using hollow-cathode sputtering and pulsed laser deposition. The modified surfaces were investigated towards topography, integrity and chemical composition with characterization methods such as atomic force microscopy and Raman spectroscopy. Interaction energies between several analytes and nanoparticle-graphene-combinations were calculated by density functional theory to find the optimal material for specific target gases, and to verify the usefulness of this approach. The impact of environmental influences such as operating temperature, relative humidity and UV irradiation on sensing properties was investigated as well. To further enhance sensor performances, the first-order time-derivative of the sensor’s resistance was introduced to speed up sensor response and a temperature cycled operation mode was investigated towards selectivity. Applying these methods in laboratory conditions, sensors with a quantitative readout of single ppb benzene and formaldehyde were developed. These results show promise to fill the existing gap of low-cost but highly sensitive and fast gas sensors for air quality monitoring. Der Fokus dieser Thesis liegt auf der Erforschung von epitaxialem Graphen auf SiC als Plattform für Luftgütesensoren. Diverse Ansätze wurden untersucht, um die Sensitivität, Selektivität, Reaktionsgeschwindigkeit und Stabilität der Sensoren zu verbessern. Die Graphenoberfläche wurde unter anderem mit Metalloxid-Nanopartikeln oder nanometerdünnen Schichten funktionalisiert. Die funktionalisierten Sensorschichten wurden hinsichtlich ihrer Oberflächenbeschaffenheit, Unversehrtheit und chemischen Zusammensetzung mittels Rasterkraftmikroskopie und Raman Spektroskopie untersucht. Die Reaktionsenergien zwischen verschiedenen Analyten und Nanopartikel-Graphen-Kombinationen wurden mit Dichtefunktionaltheorie berechnet, um das optimale Material für spezifische Gase zu finden und um die Brauchbarkeit dieser Funktionalisierungsmethode zu verifizieren. Der Einfluss von äußeren Parametern wie Sensortemperatur, Luftfeuchte und UV-Einstrahlung auf die Sensoreigenschaften wurde ebenfalls untersucht. Um die Sensorleistung zu verbessern, wurde die erste zeitliche Ableitung des Sensorwiderstands als zusätzliches Signal eingeführt und ein temperaturzyklischer Betriebsmodus hinsichtlich seiner Eignung erforscht. Durch die Anwendung dieser Methoden ist es möglich, einzelne ppbs Benzol und Formaldehyd unter Laborbedingungen zu detektieren. Diese Ergebnisse sind vielversprechend, um die bestehende Lücke der günstigen, aber sehr sensitiven Sensoren für Luftqualitätsüberwachung zu schließen. Arbetet som presenteras i denna avhandling fokuserar på epitaxiell grafen på SiC som en plattform för luftkvalitetssensorer. Flera tillvägagångssätt har testats och utvärderats för att öka känsligheten, selektiviteten, responstiden, och stabiliteten hos sensorerna. Grafenytorna har modifierats till exempel med olika metalloxid-nanopartiklar och nanolager med användning av hålkatodsputtring och PLD. De modifierade ytorna undersöktes mot topografi, strukturell integritet och kemisk sammansättning med karakteriseringsmetoder som atomkraftsmikroskopi och Ramanspektroskopi. Interaktionsenergier mellan flera analyter och nanopartiklar-grafen- materialkombinationer beräknades med täthetsfunktionalteori för att hitta de optimala materialkombinationerna för specifika målgaser och för att verifiera användbarheten av ytmodifieringarna. Effekten av externa faktorer som arbetstemperatur, relativ fuktighet och UV-bestrålning på avkänningsegenskaper undersöktes också. För att ytterligare förbättra sensorprestanda introducerades första ordningens tidsderivat av sensorns resistans för att snabbare utvärdera sensorns respons, och ett temperaturcyklat driftläge i kombination med multivariat dataanalys undersöktes mot selektivitet. Genom att använda dessa metoder under laboratorieförhållanden utvecklades sensorer med en kvantitativ avläsning av enstaka ppb bensen och formaldehyd. Dessa resultat visar på en möjlig lösning för att fylla det hålrum som finns i dagens sensorteknologier för luftkvalitetsövervakning, där flera relevanta gaser i dagsläget inte kan mätas med kostnadseffektiva men mycket känsliga och snabba gassensorer.
Epitaxial Graphene On Silicon Carbide Surfaces
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Author : Christian Riedl
language : en
Publisher:
Release Date : 2010
Epitaxial Graphene On Silicon Carbide Surfaces written by Christian Riedl and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Tunneling Spectroscopy Studies Of Epitaxial Graphene On Sic 0001 And Its Interfaces
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Author : Andreas Axel Tomas Sandin
language : en
Publisher:
Release Date : 2012
Tunneling Spectroscopy Studies Of Epitaxial Graphene On Sic 0001 And Its Interfaces written by Andreas Axel Tomas Sandin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
Theoretical Studies Of Epitaxial Graphene Formation On Metal Surfaces
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Author : Joel Posthuma De Boer
language : en
Publisher:
Release Date : 2015
Theoretical Studies Of Epitaxial Graphene Formation On Metal Surfaces written by Joel Posthuma De Boer and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
Growing Graphene On Semiconductors
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Author : Nunzio Motta
language : en
Publisher: CRC Press
Release Date : 2017-09-08
Growing Graphene On Semiconductors written by Nunzio Motta and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-09-08 with Science categories.
Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices. This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement. The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures.