Esd Protection Design Of High Speed Circuit
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Esd Protection Design Of High Speed Circuit
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Author :
language : en
Publisher:
Release Date : 2021
Esd Protection Design Of High Speed Circuit written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
Esd Protection Device And Circuit Design For Advanced Cmos Technologies
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Author : Oleg Semenov
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-04-26
Esd Protection Device And Circuit Design For Advanced Cmos Technologies written by Oleg Semenov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-26 with Technology & Engineering categories.
ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.
Area Efficient Device Optimization For Esd Protection In High Speed Interface Ics
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Author : Dan Thomas Jarard
language : en
Publisher:
Release Date : 2020
Area Efficient Device Optimization For Esd Protection In High Speed Interface Ics written by Dan Thomas Jarard and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with categories.
Electrostatic discharge (ESD) protection is considered as a vital step in integrated circuit (IC) manufacturing process. IC chips are unable to overcome the effects of transient events without adequate discharge protection. Recent trend in the industry has seen the incorporation of system level ESD protection within the IC chip. Incorporating system level on-chip ESD protection often increases cost, degrades circuit performance and consumes layout area which could otherwise be used for improving the circuit performance. These design challenges could be easily overcome if the parasitic components in a circuit were used for ESD protection. Despite the various design challenges, on-chip ESD protection is still desirable as it saves the area on the circuit board by eliminating the traditional ESD protection devices resulting in more compact circuits. Furthermore, using parasitic components while designing on-chip system level ESD protection can save layout area. In order to effectively implement this solution, a study on ESD events, protection circuits and high-speed ICs was carried out. Different types of ESD events and the different models pertaining to ESD events were studied and are discussed in detail. An overview of high-speed integrated circuits was also carried out with emphasis on the protection topologies that are commonly used. The ESD characteristics of parasitic PNP devices in rail-based ESD protection structure was then studied to summarize its viability as a protection circuit. The turn-on or breakdown voltage of the parasitic PNP is studied by technology computer aided design (TCAD) simulations performed in Silvaco software. The breakdown voltage, holding voltage, on resistance and failure current were studied and modeled to maximize ESD protection.
Esd Design Challenges And Strategies In Deeply Scaled Integrated Circuits
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Author : Shuqing Cao
language : en
Publisher: Stanford University
Release Date : 2010
Esd Design Challenges And Strategies In Deeply Scaled Integrated Circuits written by Shuqing Cao and has been published by Stanford University this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.
Esd
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Author : Steven H. Voldman
language : en
Publisher: John Wiley & Sons
Release Date : 2006-11-02
Esd written by Steven H. Voldman and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-11-02 with Technology & Engineering categories.
With the growth of high-speed telecommunications and wireless technology, it is becoming increasingly important for engineers to understand radio frequency (RF) applications and their sensitivity to electrostatic discharge (ESD) phenomena. This enables the development of ESD design methods for RF technology, leading to increased protection against electrical overstress (EOS) and ESD. ESD: RF Technology and Circuits: Presents methods for co-synthesizisng ESD networks for RF applications to achieve improved performance and ESD protection of semiconductor chips; discusses RF ESD design methods of capacitance load transformation, matching network co-synthesis, capacitance shunts, inductive shunts, impedance isolation, load cancellation methods, distributed loads, emitter degeneration, buffering and ballasting; examines ESD protection and design of active and passive elements in RF complementary metal-oxide-semiconductor (CMOS), RF laterally-diffused metal oxide semiconductor (LDMOS), RF BiCMOS Silicon Germanium (SiGe), RF BiCMOS Silicon Germanium Carbon (SiGeC), and Gallim Arsenide technology; gives information on RF ESD testing methodologies, RF degradation effects, and failure mechanisms for devices, circuits and systems; highlights RF ESD mixed-signal design integration of digital, analog and RF circuitry; sets out examples of RF ESD design computer aided design methodologies; covers state-of-the-art RF ESD input circuits, as well as voltage-triggered to RC-triggered ESD power clamps networks in RF technologies, as well as off-chip protection concepts. Following the authors series of books on ESD, this book will be a thorough overview of ESD in RF technology for RF semiconductor chip and ESD engineers. Device and circuit engineers working in the RF domain, and quality, reliability and failure analysis engineers will also find it a valuable reference in the rapidly growing are of RF ESD design. In addition, it will appeal to graduate students in RF microwave technology and RF circuit design.
The Effect Of On Chip Esd Protection On Reliable High Speed I O Link Equalization Power Consumption
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Author : Adam C. Faust
language : en
Publisher:
Release Date : 2011
The Effect Of On Chip Esd Protection On Reliable High Speed I O Link Equalization Power Consumption written by Adam C. Faust and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
For signal integrity reasons, the magnitude of the parasitics generated by electrostatic discharge (ESD) protection devices has become budgeted. Such budgets restrict the protection level and implementation options of the ESD protection circuit designer. In this work, the ESD protection on high-speed serial I/O link performance is investigated. Simulations are used to determine the effect of the parasitic ESD capacitance on the equalization required to maintain a specific bit error rate (BER). Then, the simulation results are converted into power estimates to demonstrate the power versus reliability trade-off. Essentially, rather than approaching the effect of ESD protection circuits as harmful, this work approaches the effect of ESD protection circuits as an engineering optimization problem which requires co-design between the printed circuit board (PCB) designer, transmitter and receiver circuit designer, and ESD protection circuit designer.
Esd Design For Analog Circuits
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Author : Vladislav A. Vashchenko
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-07-27
Esd Design For Analog Circuits written by Vladislav A. Vashchenko and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-07-27 with Technology & Engineering categories.
This Book and Simulation Software Bundle Project Dear Reader, this book project brings to you a unique study tool for ESD protection solutions used in analog-integrated circuit (IC) design. Quick-start learning is combined with in-depth understanding for the whole spectrum of cro- disciplinary knowledge required to excel in the ESD ?eld. The chapters cover technical material from elementary semiconductor structure and device levels up to complex analog circuit design examples and case studies. The book project provides two different options for learning the material. The printed material can be studied as any regular technical textbook. At the same time, another option adds parallel exercise using the trial version of a complementary commercial simulation tool with prepared simulation examples. Combination of the textbook material with numerical simulation experience presents a unique opportunity to gain a level of expertise that is hard to achieve otherwise. The book is bundled with simpli?ed trial version of commercial mixed- TM mode simulation software from Angstrom Design Automation. The DECIMM (Device Circuit Mixed-Mode) simulator tool and complementary to the book s- ulation examples can be downloaded from www.analogesd.com. The simulation examples prepared by the authors support the speci?c examples discussed across the book chapters. A key idea behind this project is to provide an opportunity to not only study the book material but also gain a much deeper understanding of the subject by direct experience through practical simulation examples.
Practical Esd Protection Design
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Author : Albert Wang
language : en
Publisher: John Wiley & Sons
Release Date : 2022-01-06
Practical Esd Protection Design written by Albert Wang and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-06 with Technology & Engineering categories.
An authoritative single-volume reference on the design and analysis of ESD protection for ICs Electrostatic discharge (ESD) is a major reliability challenge to semiconductors, integrated circuits (ICs), and microelectronic systems. On-chip ESD protection is a vital to any electronic products, such as smartphones, laptops, tablets, and other electronic devices. Practical ESD Protection Design provides comprehensive and systematic guidance on all major aspects of designs of on-chip ESD protection for integrated circuits (ICs). Written for students and practicing engineers alike, this one-stop resource covers essential theories, hands-on design skills, computer-aided design (CAD) methods, characterization and analysis techniques, and more on ESD protection designs. Detailed chapters examine an array of topics ranging from fundamental to advanced, including ESD phenomena, ESD failure analysis, ESD testing models, ESD protection devices and circuits, ESD design layout and technology effects, ESD design flows and co-design methods, ESD modelling and CAD techniques, and future ESD protection concepts. Based on the author’s decades of design, research and teaching experiences, Practical ESD Protection Design: • Features numerous real-world ESD protection design examples • Emphasizes on ESD protection design techniques and procedures • Describes ESD-IC co-design methodology for high-performance mixed-signal ICs and broadband radio-frequency (RF) ICs • Discusses CAD-based ESD protection design optimization and prediction using both Technology and Electrical Computer-Aided Design (TCAD/ECAD) simulation • Addresses new ESD CAD algorithms and tools for full-chip ESD physical design verification • Explores the disruptive future outlook of ESD protection Practical ESD Protection Design is a valuable reference for industrial engineers and academic researchers in the field, and an excellent textbook for electronic engineering courses in semiconductor microelectronics and integrated circuit designs.
Design Of Low Capacitance And High Speed Electrostatic Discharge Esd Devices For Low Voltage Protection Applications
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Author : You Li
language : en
Publisher:
Release Date : 2010
Design Of Low Capacitance And High Speed Electrostatic Discharge Esd Devices For Low Voltage Protection Applications written by You Li and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Electric capacity categories.
Electrostatic discharge (ESD) is defined as the transfer of charge between bodies at different potentials. The electrostatic discharge induced integrated circuit damages occur throughout the whole life of a product from the manufacturing, testing, shipping, handing, to end user operating stages. This is particularly true as microelectronics technology continues shrink to nano-metric dimensions. The ESD related failures is a major IC reliability concern and results in a loss of millions dollars to the semiconductor industry each year. Several ESD stress models and test methods have been developed to reproduce the real world ESD discharge events and quantify the sensitivity of ESD protection structures. The basic ESD models are: Human body model (HBM), Machine model (MM), and Charged device model (CDM). To avoid or reduce the IC failure due to ESD, the on-chip ESD protection structures and schemes have been implemented to discharge ESD current and clamp overstress voltage under different ESD stress events. Because of its simple structure and good performance, the junction diode is widely used in on-chip ESD protection applications. This is particularly true for ESD protection of low-voltage ICs where a relatively low trigger voltage for the ESD protection device is required. However, when the diode operates under the ESD stress, its current density and temperature are far beyond the normal conditions and the device is in danger of being damaged. For the design of effective ESD protection solution, the ESD robustness and low parasitic capacitance are two major concerns. The ESD robustness is usually defined after the failure current It2 and on-state resistance Ron. The transmission line pulsing (TLP) measurement is a very effective tool for evaluating the ESD robustness of a circuit or single element. This is particularly helpful in characterizing the effect of HBM stress where the ESD-induced damages are more likely due to thermal failures. Two types of diodes with different anode/cathode isolation technologies will be investigated for their ESD performance: one with a LOCOS (Local Oxidation of Silicon) oxide isolation called the LOCOS-bound diode, the other with a polysilicon gate isolation called the polysilicon-bound diode. We first examine the ESD performance of the LOCOS-bound diode. The effects of different diode geometries, metal connection patterns, dimensions and junction configurations on the ESD robustness and parasitic capacitance are investigated experimentally. The devices considered are N+/P-well junction LOCOS-bound diodes having different device widths, lengths and finger numbers, but the approach applies generally to the P+/N-well junction diode as well. The results provide useful insights into optimizing the diode for robust HBM ESD protection applications. Then, the current carrying and voltage clamping capabilities of LOCOS- and polysilicon-bound diodes are compared and investigated based on both TCAD simulation and experimental results. Comparison of these capabilities leads to the conclusion that the polysilicon-bound diode is more suited for ESD protection applications due to its higher performance. The effects of polysilicon-bound diode's design parameters, including the device width, anode/cathode length, finger number, poly-gate length, terminal connection and metal topology, on the ESD robustness are studied. Two figures of merits, FOM_It2 and FOM_Ron, are developed to better assess the effects of different parameters on polysilicon-bound diode's overall ESD performance. As latest generation package styles such as mBGAs, SOTs, SC70s, and CSPs are going to the millimeter-range dimensions, they are often effectively too small for people to handle with fingers. The recent industry data indicates the charged device model (CDM) ESD event becomes increasingly important in today's manufacturing environment and packaging technology. This event generates highly destructive pulses with a very short rise time and very small duration. TLP has been modified to probe CDM ESD protection effectiveness. The pulse width was reduced to the range of 1-10 ns to mimic the very fast transient of the CDM pulses. Such a very fast TLP (VFTLP) testing has been used frequently for CDM ESD characterization. The overshoot voltage and turn-on time are two key considerations for designing the CDM ESD protection devices. A relatively high overshoot voltage can cause failure of the protection devices as well as the protected devices, and a relatively long turn-on time may not switch on the protection device fast enough to effectively protect the core circuit against the CDM stress. The overshoot voltage and turn-on time of an ESD protection device can be observed and extracted from the voltage versus time waveforms measured from the VFTLP testing. Transient behaviors of polysilicon-bound diodes subject to pulses generated by the VFTLP tester are characterized for fast ESD events such as the charged device model. The effects of changing devices' dimension parameters on the transient behaviors and on the overshoot voltage and turn-on time are studied. The correlation between the diode failure and poly-gate configuration under the VFTLP stress is also investigated. Silicon-controlled rectifier (SCR) is another widely used ESD device for protecting the I/O pins and power supply rails of integrated circuits. Multiple fingers are often needed to achieve optimal ESD protection performance, but the uniformity of finger triggering and current flow is always a concern for multi-finger SCR devices operating under the post-snapback region. Without a proper understanding of the finger turn-on mechanism, design and realization of robust SCRs for ESD protection applications are not possible. Two two-finger SCRs with different combinations of anode/cathode regions are considered, and their finger turn-on uniformities are analyzed based on the I-V characteristics obtained from the transmission line pulsing (TLP) tester. The dV/dt effect of pulses with different rise times on the finger turn-on behavior of the SCRs are also investigated experimentally. In this work, unless noted otherwise, all the measurements are conducted using the Barth 4002 transmission line pulsing (TLP) and Barth 4012 very-fast transmission line pulsing (VFTLP) testers.
Nano Cmos Circuit And Physical Design
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Author : Ban Wong
language : en
Publisher: John Wiley & Sons
Release Date : 2005-04-08
Nano Cmos Circuit And Physical Design written by Ban Wong and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-04-08 with Technology & Engineering categories.
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.