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Essderc 89


Essderc 89
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Essderc 89


Essderc 89
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Author : Anton Heuberger
language : en
Publisher: Springer
Release Date : 1989-09

Essderc 89 written by Anton Heuberger and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989-09 with Technology & Engineering categories.


The conference ESSDERC '89 held in September 1989 in Berlin was concerned with the physics, electrical characteristics, reliability and processing of solid state devices and electronic materials. The proceedings contain all invited and contributed papers of the conference and thus becomes a state-of-the-art-report of solid state device research in Europe 1989.



Essderc 89


Essderc 89
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Author :
language : en
Publisher:
Release Date : 1988

Essderc 89 written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Solid state electronics categories.




Essderc 89


Essderc 89
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Author :
language : en
Publisher:
Release Date : 1989

Essderc 89 written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1989 with Electrical & Computer Engineering categories.




Esprit 89


Esprit 89
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Author : CEC, DG for Telecommunications
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Esprit 89 written by CEC, DG for Telecommunications and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.


The 6th ESPRIT Conference is being held in Brussels from the 27th November to the 1 st December 1989. Well over 1500 participants from all over Europe are expected to attend the various events during the week. The Conference will offer the opportunity to be updated on the results of ongoing Esprit projects and to develop Europe-wide contacts with colleagues, both within a specific branch of Information Technology and across different branches. The first three days of the week are devoted to presentations of Esprit I projects, structured into plenary and parallel sessions; this year there is special emphasis on panels and workshops where participants can exchange ideas and hold in-depth discussions on specific topics. The different areas of Esprit work are covered: Microelectronics, Informa tion Processing Systems, Office and Business Systems, Computer Integrated Manufac turing, Basic Research and different aspects of the Information Exchange System. During the IT Forum on Thursday 30th November, major European industrial and political decision-makers will address the audience in the morning. In the afternoon, different aspects of Technology Transfer will be discussed with the participation of outside experts, and presentations on the future plans for community R&D in IT will take place.



Essderc 88


Essderc 88
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Author : Jean-Pierre Nougier
language : en
Publisher:
Release Date : 1988

Essderc 88 written by Jean-Pierre Nougier and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Semiconductors categories.




Device And Circuit Cryogenic Operation For Low Temperature Electronics


Device And Circuit Cryogenic Operation For Low Temperature Electronics
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Author : Francis Balestra
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11

Device And Circuit Cryogenic Operation For Low Temperature Electronics written by Francis Balestra and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.


Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.



Semiconductors


Semiconductors
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Author : W.M. Jr. Coughran
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Semiconductors written by W.M. Jr. Coughran and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Mathematics categories.


This IMA Volume in Mathematics and its Applications SEMICONDUCTORS, PART II is based on the proceedings of the IMA summer program "Semiconductors." Our goal was to foster interaction in this interdisciplinary field which involves electrical engineers, computer scientists, semiconductor physicists and mathematicians, from both university and industry. In particular, the program was meant to encourage the participation of numerical and mathematical analysts with backgrounds in ordinary and partial differential equations, to help get them involved in the mathematical as pects of semiconductor models and circuits. We are grateful to W.M. Coughran, Jr., Julian Cole, Peter Lloyd, and Jacob White for helping Farouk Odeh organize this activity and trust that the proceedings will provide a fitting memorial to Farouk. We also take this opportunity to thank those agencies whose financial support made the program possible: the Air Force Office of Scientific Research, the Army Research Office, the National Science Foundation, and the Office of Naval Research. A vner Friedman Willard Miller, J r. Preface to Part II Semiconductor and integrated-circuit modeling are an important part of the high technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering work stations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such mod eling.



Proceedings Of The Fourth Symposium On Low Temperature Electronics And High Temperature Superconductivity


Proceedings Of The Fourth Symposium On Low Temperature Electronics And High Temperature Superconductivity
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Author : Cor L. Claeys
language : en
Publisher: The Electrochemical Society
Release Date : 1997

Proceedings Of The Fourth Symposium On Low Temperature Electronics And High Temperature Superconductivity written by Cor L. Claeys and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Technology & Engineering categories.




Semiconductor Laser Engineering Reliability And Diagnostics


Semiconductor Laser Engineering Reliability And Diagnostics
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Author : Peter W. Epperlein
language : en
Publisher: John Wiley & Sons
Release Date : 2013-01-25

Semiconductor Laser Engineering Reliability And Diagnostics written by Peter W. Epperlein and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-01-25 with Technology & Engineering categories.


This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.



High Energy And High Dose Ion Implantation


High Energy And High Dose Ion Implantation
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Author : S.U. Campisano
language : en
Publisher: Elsevier
Release Date : 1992-06-16

High Energy And High Dose Ion Implantation written by S.U. Campisano and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-06-16 with Technology & Engineering categories.


Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.