Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors
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Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors
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Author : Peter Javorka
language : en
Publisher:
Release Date : 2004
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors written by Peter Javorka and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors
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Author :
language : en
Publisher:
Release Date : 2019
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with categories.
Fabrication And Characterization Of Algan Gan Metal Insulator Semiconductor High Electron Mobility Transistors For High Power Applications
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Author : Anthony Calzolaro
language : en
Publisher:
Release Date : 2022
Fabrication And Characterization Of Algan Gan Metal Insulator Semiconductor High Electron Mobility Transistors For High Power Applications written by Anthony Calzolaro and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with categories.
Gan Based Materials And Devices Growth Fabrication Characterization And Performance
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Author : Robert F Davis
language : en
Publisher: World Scientific
Release Date : 2004-05-07
Gan Based Materials And Devices Growth Fabrication Characterization And Performance written by Robert F Davis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-05-07 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Fabrication Characterization And Modeling Of Algan Gan High Electron Mobility Transistors
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Author : Ekaterina Harvard
language : en
Publisher:
Release Date : 2013
Fabrication Characterization And Modeling Of Algan Gan High Electron Mobility Transistors written by Ekaterina Harvard and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the promise of ever higher power at ever higher frequency with the emergence of wide bandgap group III-V semiconductors, including Gallium Nitride. One area receiving attention is that of novel passivation materials for the active areas of AlGaN/GaN devices. Passivation is a critical issue because surface trapping effects are essentially unavoidable, even with the highest queality epitaxial layers, due to the polarized nature of the material. The question then becomes, which passivation materials offer the best mitigation of surface trapping effects with the least impact on parasitic elements detrimental to device performance. In this work, AlGaN/GaN devices passivated with AlSiN for both high frequency and high power operation are studied. The high frequency devices were fabricated alongside devices passivated with SiN, a standard passivation material, and characterized for both small signal and large signal performance. The AlSiN passivation was found to enhance both small and large signal performance, and so another set of devices was fabricated with high voltage, high power switching as the intended application. These devices were characterized for off-state breakdown, which was more than 4 times that of typical SiN-passivated devices, and time-domain and loadline measurements were performed.
Quantitative Defect Spectroscopy On Operating Algan Gan High Electron Mobility Transistors
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Author : Andrew C Malonis
language : en
Publisher:
Release Date : 2009
Quantitative Defect Spectroscopy On Operating Algan Gan High Electron Mobility Transistors written by Andrew C Malonis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Abstract: Despite numerous advances in the growth, fabrication, and characterization of AlGaN/GaN HEMT devices, there remain a number of unknowns related to the impact of deep levels on HEMT performance. Of specific interest to ongoing development of HEMT technology is the development of techniques which can not only detect the specific energy levels of deep levels in operating devices, but can also relate the presence of these defects to changes in specific device parameters. By examining more established techniques and developing new on-device characterization methods, the impact of defects on AlGaN/GaN HEMTs was quantitatively studied.
Fabrication And Characterization Of Aigan Gan High Electron Mobility Transistors
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Author : Peter Javorka
language : en
Publisher:
Release Date : 2004
Fabrication And Characterization Of Aigan Gan High Electron Mobility Transistors written by Peter Javorka and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Fabrication And Characterization Of Zinc Oxide Light Emitting Diodes Indium Zinc Oxide Thin Film Transistors And Algan Gan High Electron Mobility Transistor Based Biosensors
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Author : Yu-Lin Wang
language : en
Publisher:
Release Date : 2009
Fabrication And Characterization Of Zinc Oxide Light Emitting Diodes Indium Zinc Oxide Thin Film Transistors And Algan Gan High Electron Mobility Transistor Based Biosensors written by Yu-Lin Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
ABSTRACT: Hydrogen effects on the electrical and optical properties of p-i-n ZnO light emitting diodes (LEDs) were investigated. There were no diode characteristics or light emission observed from p-i-n ZnO LEDs unless the LEDs were annealed at 350 °C after fabrication. Annealed diodes showed band-edge electroluminescence at 385nm and a broad defect band with a peak at 930nm at room temperature. The effects of hydrogen plasma, moisture, water, and phosphoric acid solution on the annealed diode characteristics were investigated and significant degradation of electrical and optical properties were observed in all cases. The plasma-enhanced chemical vapor-deposited (PECVD) SiO2 and SiN[subscript x] passivation effects on p-i-n ZnO LEDs were also investigated.
Design Fabrication And Characterization Of Gallium Nitride High Electron Mobility Transistors
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Author : Jonathan George Felbinger
language : en
Publisher:
Release Date : 2010
Design Fabrication And Characterization Of Gallium Nitride High Electron Mobility Transistors written by Jonathan George Felbinger and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Over the past few years, systems based on gallium nitride high-electron-mobility transistors (GaN HEMTs) have increasingly penetrated the markets for cellular telephone base stations, RADAR, and satellite communications. High power (several W/mm), continuous-wave (CW) operation of microwave HEMTs dissipates heat; as the device increases in temperature, its electron mobility drops and performance degrades. To enhance high-power performance and enable operation in high ambient temperature environments, the AlxGa1[-]xN/GaN epitaxial layers are attached to polycrystalline diamond substrates. e lower surface temperature rise on GaN-on- diamond is directly measured; subsequently, improved electrical performance is demonstrated on diamond versus the native (Si) substrates. Benchmark AlxGa1[-]xN/GaN devices are fabricated on SiC for comparison to diamond, Si, and bulk GaN substrates; the merits and performance of each is compared. In collaboration with Group4 Labs, X-band amplifier modules based on GaN-on-diamond HEMTs have been demonstrated for the first time. Recent efforts have focused on substituting AlxIn1[-]xN barriers in place of AlxGa1[-]xN to achieve higher output power at microwave frequencies and addressing the challenges of this new material system. Ultimately, these techniques may be combined to attain the utmost in device performance.
Analysis And Optimization Of Algan Gan High Electron Mobility Transistors For Microwave Applications
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Author : Michael Hosch
language : en
Publisher: Cuvillier Verlag
Release Date : 2011-08-08
Analysis And Optimization Of Algan Gan High Electron Mobility Transistors For Microwave Applications written by Michael Hosch and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-08-08 with Technology & Engineering categories.
This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.