Fabrication Characterization And Modeling Of Algan Gan High Electron Mobility Transistors
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Fabrication Characterization And Modeling Of Algan Gan High Electron Mobility Transistors
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Author : Ekaterina Harvard
language : en
Publisher:
Release Date : 2013
Fabrication Characterization And Modeling Of Algan Gan High Electron Mobility Transistors written by Ekaterina Harvard and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the promise of ever higher power at ever higher frequency with the emergence of wide bandgap group III-V semiconductors, including Gallium Nitride. One area receiving attention is that of novel passivation materials for the active areas of AlGaN/GaN devices. Passivation is a critical issue because surface trapping effects are essentially unavoidable, even with the highest queality epitaxial layers, due to the polarized nature of the material. The question then becomes, which passivation materials offer the best mitigation of surface trapping effects with the least impact on parasitic elements detrimental to device performance. In this work, AlGaN/GaN devices passivated with AlSiN for both high frequency and high power operation are studied. The high frequency devices were fabricated alongside devices passivated with SiN, a standard passivation material, and characterized for both small signal and large signal performance. The AlSiN passivation was found to enhance both small and large signal performance, and so another set of devices was fabricated with high voltage, high power switching as the intended application. These devices were characterized for off-state breakdown, which was more than 4 times that of typical SiN-passivated devices, and time-domain and loadline measurements were performed.
Modeling Of Algan Gan High Electron Mobility Transistors
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Author : D. Nirmal
language : en
Publisher: Springer Nature
Release Date : 2024-12-23
Modeling Of Algan Gan High Electron Mobility Transistors written by D. Nirmal and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-12-23 with Technology & Engineering categories.
This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14
Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design
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Author : Endalkachew Shewarega Mengistu
language : en
Publisher: kassel university press GmbH
Release Date : 2008
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Gan Based Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Information System Design Communication Networks And Iot
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Author : Vikrant Bhateja
language : en
Publisher: Springer Nature
Release Date : 2024-10-07
Information System Design Communication Networks And Iot written by Vikrant Bhateja and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-10-07 with Computers categories.
This book presents a collection of high-quality, peer-reviewed research papers from the 8th International Conference on Information System Design and Intelligent Applications (ISDIA 2024), held in Dubai, UAE, from 3 - 4 January 2024. It covers a wide range of topics in computer science and information technology, including data mining and data warehousing, high-performance computing, parallel and distributed computing, computational intelligence, soft computing, big data, cloud computing, grid computing, cognitive computing, and information security.
Intelligent Computing And Automation
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Author : Vikrant Bhateja
language : en
Publisher: Springer Nature
Release Date : 2025-03-28
Intelligent Computing And Automation written by Vikrant Bhateja and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-03-28 with Computers categories.
The book presents the proceedings of the 12th International Conference on Frontiers of Intelligent Computing: Theory and Applications (FICTA 2024), held at Intelligent Systems Research Group (ISRG), London Metropolitan University, London, United Kingdom, during June 6–7, 2024. Researchers, scientists, engineers and practitioners exchange new ideas and experiences in the domain of intelligent computing theories with prospective applications in various engineering disciplines in the book. This book is divided into four volumes. It covers broad areas of information and decision sciences, with papers exploring both the theoretical and practical aspects of data-intensive computing, data mining, evolutionary computation, knowledge management and networks, sensor networks, signal processing, wireless networks, protocols and architectures. This book is a valuable resource for postgraduate students in various engineering disciplines.
Parameter Extraction And Complex Nonlinear Transistor Models
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Author : Gunter Kompa
language : en
Publisher: Artech House
Release Date : 2019-12-31
Parameter Extraction And Complex Nonlinear Transistor Models written by Gunter Kompa and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-31 with Technology & Engineering categories.
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Gan Based Materials And Devices Growth Fabrication Characterization And Performance
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Author : Robert F Davis
language : en
Publisher: World Scientific
Release Date : 2004-05-07
Gan Based Materials And Devices Growth Fabrication Characterization And Performance written by Robert F Davis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-05-07 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Circuit Design For Modern Applications
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Author : A. Andrew Roobert
language : en
Publisher: CRC Press
Release Date : 2025-02-05
Circuit Design For Modern Applications written by A. Andrew Roobert and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-02-05 with Technology & Engineering categories.
This book offers a clear exploration of cutting-edge semiconductor circuit technologies and their practical applications. It covers topics like advanced transistor design, low-power consumption techniques, and high-performance circuit design. Circuit Design for Modern Applications explores the recent innovations in semiconductor technology. Bandgap reference circuits, quad model transistors, voltagecontrolled oscillators, LDO regulators, power amplifiers, low noise amplifiers, operational amplifiers, low-power CNTFET-based quaternary multipliers, and STT MRAM-based cache memory for multicore systems are discussed. It points out the difficulties in designing CMOS analog and RF circuits for mmWave applications and looks into newly developed field-effect transistors for an alternate solution. Innovative devices such as III-V material-based HEMTs, and junctionless FETs are discussed. The book also looks at creative ways to improve circuit performance and energy efficiency, which is a useful resource for academics, researchers, and industry experts working in semiconductors. This book will help the readers to stay on the cutting edge of contemporary circuit design technologies, covering various topics from fundamental circuit design to high-performance circuits.