Modeling Of Algan Gan High Electron Mobility Transistors
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Modeling Of Algan Gan High Electron Mobility Transistors
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Author : D. Nirmal
language : en
Publisher: Springer Nature
Release Date : 2024-12-23
Modeling Of Algan Gan High Electron Mobility Transistors written by D. Nirmal and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-12-23 with Technology & Engineering categories.
This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14
Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Device Modeling Of Algan Gan High Electron Mobility Transistors Hemts
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Author : Manju Korwal Chattopadhyay
language : en
Publisher: LAP Lambert Academic Publishing
Release Date : 2010-10
Device Modeling Of Algan Gan High Electron Mobility Transistors Hemts written by Manju Korwal Chattopadhyay and has been published by LAP Lambert Academic Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-10 with categories.
High electron mobility transistor (HEMT) made of compound semiconductors exhibit great potential for high-power applications at RF, microwave, and millimeter-wave frequencies. Owing largely to a high electrical breakdown field, electron sheet charge density, and substrate material with high thermal conductivity, these are capable of handling larger power density signals at high temperatures in unfriendly environments. The present work involves the analytical modeling of AlGaN/GaN material system based HEMTs. A polynomial represents Fermi-level as a non-linear function of sheet carrier density at the interface of HEMTs. Using this polynomial, models for finding the temperature dependent gate capacitance, parasitic MESFET dependent transconductance and dc characteristics including self-heating effects were formulated. The effects of spontaneous and piezoelectric polarization fields, have been investigated in detail. All results show reasonable agreement with the experimental data. Our analytical simulation should be useful in device designing, allowing interactive optimization of device configuration and economically complementing experimental investigations.
Dynamic Performance Simulation Of Algan Gan High Electron Mobility Transistors
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Author : Shrijit Mukherjee
language : en
Publisher:
Release Date : 2019-05-31
Dynamic Performance Simulation Of Algan Gan High Electron Mobility Transistors written by Shrijit Mukherjee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-31 with Technology & Engineering categories.
Abstract: GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in several commercial and military applications. However, long term reliability continues to affect large scale integration of such devices, specifically the potential of AlGaN/GaN High Electron Mobility Transistors (HEMTs), due to the indefinite nature of defects in the structure and mechanisms of performance degradation relevant to such defects. Recent efforts have begun to concentrate more on the bulk properties of the GaN buffer on which the heterostructure is grown, and how defects distributed in the buffer can affect the performance under various operating schemes. This dissertation discusses numerical simulator based investigation of the numerous possibilities by which such point defects can affect electrical behavior. For HEMTs designed for satellite communication systems, proton irradiation results indicate changes in the device parasitics resulting in degradation of RF parameters. Assumption of such radiation damage introducing fast traps indicate severe degradation far exceeding experimental observation. For power switching applications, the necessity of accurately capturing as-grown defects was realized when modeling current relaxation during bias switching. Ability to introduce multiple trap levels in the material bulk aided in achieving simulation results replicating experimental results more accurately than published previously. Impact of factors associated with such traps, either associated with discrete energy levels or band-like distribution in energy, on the nature of current relaxation characterized by its derivative has been presented. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors" by Shrijit Mukherjee, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Modeling Of Algan Gan High Electron Mobility Transistor For Sensors And High Temperature Circuit Applications
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Author : Sazia Afreen Eliza
language : en
Publisher:
Release Date : 2008
Modeling Of Algan Gan High Electron Mobility Transistor For Sensors And High Temperature Circuit Applications written by Sazia Afreen Eliza and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
With the most advanced and mature technology for electronic devices, silicon (Si) based devices can be processed with practically no material defects. However, Si technology has difficulty meeting the demand for some high-power, high-speed, and high-temperature applications due to limitations in its intrinsic properties. Wide bandgap semiconductors have greater prospects compared to Si based devices. The wide band gap material system shows higher breakdown voltage, lower leakage, higher saturation velocity, larger thermal conductivity and better thermal stability suitable for high-power, high-speed, and high-temperature operations of the devices. In recent years, GaN based devices have drawn much research attention due to their superior performances compared to other wide bandgap semiconductor (SiC) devices. Specifically, implementation of AlGaN/GaN high electron mobility transistor (HEMT) based power amplifiers have become very promising for applications in base stations or radar. With the increase in device power, channel temperature rises. This introduces high-temperature effects in the device characteristics. In addition, high-power, high-frequency and high-temperature operation of AlGaN/GaN HEMT is required for telemetry in extreme environment. AlGaN/GaN HEMT also shows great potential as chemically selective field-effect transistor (CHEMFET). Due to simpler imprint technique and amplification advantages CHEMFET based detection and characterization of bio-molecules has become very popular. AlGaN/GaN HEMT has high mobility two-dimensional electron gas (2 DEG) at the hetero-interface closer to the surface and hence it shows high sensitivity to any surface charge conditions. The primary objective of this research is to develop a temperature dependent physics based model of AlGaN/GaN HEMT to predict the performance for high-power and high-speed applications at varying temperatures. The physics based model has also been applied to predict the characteristics of AlGaN/GaN HEMT based CHEMFET for the characterization of bio-molecular solar batteries - Photosystem I reaction centers. Using the CHEMFET model, the number of reaction centers with effective orientation on the gate surface of the HEMT can be estimated.
Ultrafast Phenomena In Semiconductors
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Author : Kong-Thon Tsen
language : en
Publisher: Springer Science & Business Media
Release Date : 2001
Ultrafast Phenomena In Semiconductors written by Kong-Thon Tsen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Gardening categories.
There are many books in the market devoted to the review of certain fields. This book is different from those in that authors not only provide reviews of the fields but also present their own important contributions to the fields in a tutorial way. As a result, researchers who are already in the field of ultrafast dynamics in semicon ductors and its device applications as well as researchers and graduate students just entering the field will benefit from it. This book is made up of recent new developments in the field of ultrafast dynamics in semiconductors. It consists of nine chapters. Chapter 1 reviews a mi croscopic many-body theory which allows one to compute the linear and non-linear optical properties of semiconductor superlattices in the presence of homogeneous electric fields. Chapter 2 deals with ultrafast intersubband dynamics in quantum wells and device structures. Chapter 3 is devoted to Bloch oscillations in semicon ductors and their applications. Chapter 4 discusses transient electron transport phe nomena, such as electron ballistic transport and electron velocity overshoot phe nomena as well as non-equilibrium phonon dynamics in nanostructure semicon ductors. Chapter 5 reviews experimental and theoretical work on the use of the phase properties of one or more ultrashort optical pulses to generate and control electrical currents in semiconductors.
Fabrication Characterization And Modeling Of Algan Gan High Electron Mobility Transistors
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Author : Ekaterina Harvard
language : en
Publisher:
Release Date : 2013
Fabrication Characterization And Modeling Of Algan Gan High Electron Mobility Transistors written by Ekaterina Harvard and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the promise of ever higher power at ever higher frequency with the emergence of wide bandgap group III-V semiconductors, including Gallium Nitride. One area receiving attention is that of novel passivation materials for the active areas of AlGaN/GaN devices. Passivation is a critical issue because surface trapping effects are essentially unavoidable, even with the highest queality epitaxial layers, due to the polarized nature of the material. The question then becomes, which passivation materials offer the best mitigation of surface trapping effects with the least impact on parasitic elements detrimental to device performance. In this work, AlGaN/GaN devices passivated with AlSiN for both high frequency and high power operation are studied. The high frequency devices were fabricated alongside devices passivated with SiN, a standard passivation material, and characterized for both small signal and large signal performance. The AlSiN passivation was found to enhance both small and large signal performance, and so another set of devices was fabricated with high voltage, high power switching as the intended application. These devices were characterized for off-state breakdown, which was more than 4 times that of typical SiN-passivated devices, and time-domain and loadline measurements were performed.
Wide Bandgap Based Devices
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Author : Farid Medjdoub
language : en
Publisher: MDPI
Release Date : 2021-05-26
Wide Bandgap Based Devices written by Farid Medjdoub and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-05-26 with Technology & Engineering categories.
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Analysis And Simulation Of Heterostructure Devices
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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2004
Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Computers categories.
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Advanced Spice Model For Gan Hemts Asm Hemt
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Author : Sourabh Khandelwal
language : en
Publisher: Springer Nature
Release Date : 2022-01-01
Advanced Spice Model For Gan Hemts Asm Hemt written by Sourabh Khandelwal and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-01 with Technology & Engineering categories.
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.