Modeling Of Algan Gan High Electron Mobility Transistor For Sensors And High Temperature Circuit Applications
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Modeling Of Algan Gan High Electron Mobility Transistor For Sensors And High Temperature Circuit Applications
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Author : Sazia Afreen Eliza
language : en
Publisher:
Release Date : 2008
Modeling Of Algan Gan High Electron Mobility Transistor For Sensors And High Temperature Circuit Applications written by Sazia Afreen Eliza and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
With the most advanced and mature technology for electronic devices, silicon (Si) based devices can be processed with practically no material defects. However, Si technology has difficulty meeting the demand for some high-power, high-speed, and high-temperature applications due to limitations in its intrinsic properties. Wide bandgap semiconductors have greater prospects compared to Si based devices. The wide band gap material system shows higher breakdown voltage, lower leakage, higher saturation velocity, larger thermal conductivity and better thermal stability suitable for high-power, high-speed, and high-temperature operations of the devices. In recent years, GaN based devices have drawn much research attention due to their superior performances compared to other wide bandgap semiconductor (SiC) devices. Specifically, implementation of AlGaN/GaN high electron mobility transistor (HEMT) based power amplifiers have become very promising for applications in base stations or radar. With the increase in device power, channel temperature rises. This introduces high-temperature effects in the device characteristics. In addition, high-power, high-frequency and high-temperature operation of AlGaN/GaN HEMT is required for telemetry in extreme environment. AlGaN/GaN HEMT also shows great potential as chemically selective field-effect transistor (CHEMFET). Due to simpler imprint technique and amplification advantages CHEMFET based detection and characterization of bio-molecules has become very popular. AlGaN/GaN HEMT has high mobility two-dimensional electron gas (2 DEG) at the hetero-interface closer to the surface and hence it shows high sensitivity to any surface charge conditions. The primary objective of this research is to develop a temperature dependent physics based model of AlGaN/GaN HEMT to predict the performance for high-power and high-speed applications at varying temperatures. The physics based model has also been applied to predict the characteristics of AlGaN/GaN HEMT based CHEMFET for the characterization of bio-molecular solar batteries - Photosystem I reaction centers. Using the CHEMFET model, the number of reaction centers with effective orientation on the gate surface of the HEMT can be estimated.
Biosensors Recent Advances And Future Challenges
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Author : Paolo Bollella
language : en
Publisher: MDPI
Release Date : 2021-01-27
Biosensors Recent Advances And Future Challenges written by Paolo Bollella and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-27 with Science categories.
The present book is devoted to all aspects of biosensing in a very broad definition, including, but not limited to, biomolecular composition used in biosensors (e.g., biocatalytic enzymes, DNAzymes, abiotic nanospecies with biocatalytic features, bioreceptors, DNA/RNA, aptasensors, etc.), physical signal transduction mechanisms (e.g., electrochemical, optical, magnetic, etc.), engineering of different biosensing platforms, operation of biosensors in vitro and in vivo (implantable or wearable devices), self-powered biosensors, etc. The biosensors can be represented with analogue devices measuring concentrations of analytes and binary devices operating in the YES/NO format, possibly with logical processing of input signals. Furthermore, the book is aimed at attracting young scientists and introducing them to the field, while providing newcomers with an enormous collection of literature references.
Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14
Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Zinc Oxide Bulk Thin Films And Nanostructures
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Author : Chennupati Jagadish
language : en
Publisher: Elsevier
Release Date : 2011-10-10
Zinc Oxide Bulk Thin Films And Nanostructures written by Chennupati Jagadish and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-10-10 with Science categories.
With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering:- Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film
Frontiers In Electronics Selected Papers From The Workshop On Frontiers In Electronics 2015 Wofe 15
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Author : Sorin Cristoloveanu
language : en
Publisher: World Scientific
Release Date : 2017-01-13
Frontiers In Electronics Selected Papers From The Workshop On Frontiers In Electronics 2015 Wofe 15 written by Sorin Cristoloveanu and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-01-13 with Technology & Engineering categories.
Rapid pace of electronic technology evolution and current economic climate compel a merger of such technical areas as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology.This Workshop aims at encouraging active cross-fertilization of the different 'species' in this electronic planet. The WOFE2015 had gather experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms.This Monographs includes ten invited articles; cover topics ranging from Ultra-thin silicon nanowire solar cells, to hydrogen generation under illumination of GaN-based structures and from ultrafast response of nanoscale device structures to Power device optimization.
Wide Energy Bandgap Electronic Devices
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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003
Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.
A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.
Materials And Reliability Handbook For Semiconductor Optical And Electron Devices
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Author : Osamu Ueda
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-09-22
Materials And Reliability Handbook For Semiconductor Optical And Electron Devices written by Osamu Ueda and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-22 with Science categories.
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.
Polarization Effects In Semiconductors
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Author : Debdeep Jena
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Polarization Effects In Semiconductors written by Debdeep Jena and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
More Than Moore
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Author : Guo Qi Zhang
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-01-23
More Than Moore written by Guo Qi Zhang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-01-23 with Technology & Engineering categories.
In the past decades, the mainstream of microelectronics progression was mainly powered by Moore's law focusing on IC miniaturization down to nano scale. However, there is a fast increasing need for "More than Moore" (MtM) products and technology that are based upon or derived from silicon technologies, but do not simply scale with Moore’s law. This book provides new vision, strategy and guidance for the future technology and business development of micro/nanoelectronics.
Human Centric Smart Computing
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Author : Siddhartha Bhattacharyya
language : en
Publisher: Springer Nature
Release Date : 2024-02-17
Human Centric Smart Computing written by Siddhartha Bhattacharyya and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-02-17 with Computers categories.
This book includes high-quality research papers presented at the Second International Conference on Human-Centric Smart Computing (ICHCSC 2023), organized by the University of Engineering and Management, Jaipur, India, on 5–6 July 2023 in New Delhi, India. The topics covered in the book are human-centric computing, hyper connectivity, and data science. The book presents innovative work by leading academics, researchers, and experts from industry.