Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design

DOWNLOAD

Download Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page

Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design

DOWNLOAD
Author : Endalkachew Shewarega Mengistu
language : en
Publisher: kassel university press GmbH
Release Date : 2008

Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.

Parameter Extraction And Complex Nonlinear Transistor Models

DOWNLOAD
Author : Gunter Kompa
language : en
Publisher: Artech House
Release Date : 2019-12-31

Parameter Extraction And Complex Nonlinear Transistor Models written by Gunter Kompa and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-31 with Technology & Engineering categories.

All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.

Large Signal Modeling Of Gan Device For High Power Amplifier Design

DOWNLOAD
Author : Anwar Hasan Jarndal
language : en
Publisher: kassel university press GmbH
Release Date : 2006

Large Signal Modeling Of Gan Device For High Power Amplifier Design written by Anwar Hasan Jarndal and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.

Device Characterization And Modeling Of Large Size Gan Hemts

DOWNLOAD
Author : Jaime Alberto Zamudio Flores
language : en
Publisher: kassel university press GmbH
Release Date : 2012-08-21

Device Characterization And Modeling Of Large Size Gan Hemts written by Jaime Alberto Zamudio Flores and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-08-21 with Gallium nitride categories.

This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.

Partitioning Design Approach For The Reliable Design Of Highly Efficient Rf Power Amplifiers

DOWNLOAD
Author : Roshanak Lehna
language : en
Publisher: kassel university press GmbH
Release Date : 2017-11-13

Partitioning Design Approach For The Reliable Design Of Highly Efficient Rf Power Amplifiers written by Roshanak Lehna and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-11-13 with categories.

The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.

Nonlinear Transistor Model Parameter Extraction Techniques

DOWNLOAD
Author : Matthias Rudolph
language : en
Publisher: Cambridge University Press
Release Date : 2011-10-13

Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-10-13 with Technology & Engineering categories.

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

Efficiency Enhancement Of Linear Gan Rf Power Amplifiers Using The Doherty Technique

DOWNLOAD
Author :
language : en
Publisher: kassel university press GmbH
Release Date :

Efficiency Enhancement Of Linear Gan Rf Power Amplifiers Using The Doherty Technique written by and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.

Millimeter Wave Gan Power Amplifier Design

DOWNLOAD
Author : Edmar Camargo
language : en
Publisher: Artech House
Release Date : 2022-05-31

Millimeter Wave Gan Power Amplifier Design written by Edmar Camargo and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-05-31 with Technology & Engineering categories.

This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.

Basic Properties Of Iii V Devices Understanding Mysterious Trapping Phenomena

DOWNLOAD
Author : Kompa, Günter
language : en
Publisher: kassel university press GmbH
Release Date : 2014

Basic Properties Of Iii V Devices Understanding Mysterious Trapping Phenomena written by Kompa, Günter and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with Compound semiconductors categories.

Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.

Information Technology Applications In Industry

DOWNLOAD
Author : Jun Zhang
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2012-12-27

Information Technology Applications In Industry written by Jun Zhang and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-27 with Technology & Engineering categories.

Selected, peer reviewed papers from the 2012 International Conference on Information Technology and Management Innovation (ICITMI 2012), November 10-11, 2012, Guangzhou, China