Device Characterization And Modeling Of Large Size Gan Hemts
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Device Characterization And Modeling Of Large Size Gan Hemts
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Author : Jaime Alberto Zamudio Flores
language : en
Publisher: kassel university press GmbH
Release Date : 2012-08-21
Device Characterization And Modeling Of Large Size Gan Hemts written by Jaime Alberto Zamudio Flores and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-08-21 with Gallium nitride categories.
This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Parameter Extraction And Complex Nonlinear Transistor Models
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Author : Gunter Kompa
language : en
Publisher: Artech House
Release Date : 2019-12-31
Parameter Extraction And Complex Nonlinear Transistor Models written by Gunter Kompa and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-31 with Technology & Engineering categories.
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Intelligent Computing And Automation
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Author : Vikrant Bhateja
language : en
Publisher: Springer Nature
Release Date : 2025-03-28
Intelligent Computing And Automation written by Vikrant Bhateja and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-03-28 with Computers categories.
The book presents the proceedings of the 12th International Conference on Frontiers of Intelligent Computing: Theory and Applications (FICTA 2024), held at Intelligent Systems Research Group (ISRG), London Metropolitan University, London, United Kingdom, during June 6–7, 2024. Researchers, scientists, engineers and practitioners exchange new ideas and experiences in the domain of intelligent computing theories with prospective applications in various engineering disciplines in the book. This book is divided into four volumes. It covers broad areas of information and decision sciences, with papers exploring both the theoretical and practical aspects of data-intensive computing, data mining, evolutionary computation, knowledge management and networks, sensor networks, signal processing, wireless networks, protocols and architectures. This book is a valuable resource for postgraduate students in various engineering disciplines.
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design
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Author : Endalkachew Shewarega Mengistu
language : en
Publisher: kassel university press GmbH
Release Date : 2008
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Gan Transistor Modeling For Rf And Power Electronics
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Author : Yogesh Singh Chauhan
language : en
Publisher: Elsevier
Release Date : 2024-05-20
Gan Transistor Modeling For Rf And Power Electronics written by Yogesh Singh Chauhan and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-05-20 with Technology & Engineering categories.
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction
Wide Bandgap Semiconductor Based Micro Nano Devices
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Author : Jung-Hun Seo
language : en
Publisher: MDPI
Release Date : 2019-04-25
Wide Bandgap Semiconductor Based Micro Nano Devices written by Jung-Hun Seo and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-04-25 with Technology & Engineering categories.
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
Analysis And Simulation Of Heterostructure Devices
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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.
Modeling Of Algan Gan High Electron Mobility Transistors
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Author : D. Nirmal
language : en
Publisher: Springer Nature
Release Date : 2024-12-23
Modeling Of Algan Gan High Electron Mobility Transistors written by D. Nirmal and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-12-23 with Technology & Engineering categories.
This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
Microwave De Embedding
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Author : Ernesto Limiti
language : en
Publisher: Elsevier Inc. Chapters
Release Date : 2013-11-09
Microwave De Embedding written by Ernesto Limiti and has been published by Elsevier Inc. Chapters this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-09 with Technology & Engineering categories.
An overview of topics is presented related to noise characterization and modeling of linear, active devices for microwave applications, as well as to advanced methodologies for low-noise design. A complete description of the most common noise measurement techniques, namely the Y-factor method and the cold source method, are provided, with particular attention being paid to practical aspects such as de-embedding the measurement at the device under test reference planes, possible sources of error, and uncertainty estimation. Noise modeling is approached from a well-established standpoint, based on the extraction of a small-signal equivalent circuit model; but also source pull-based techniques—both standard and advanced ones—are broadly illustrated. Finally, a comprehensive discussion on design of single- and multistage low-noise amplifiers is proposed, ranging from the most classical tools and methodologies, such as constant-gain and constant-noise circles, to novel graphical tools and more advanced concepts, such as global mismatch limits and noise measure.
Thermal And Electro Thermal System Simulation 2020
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Author : Márta Rencz
language : en
Publisher: MDPI
Release Date : 2021-01-12
Thermal And Electro Thermal System Simulation 2020 written by Márta Rencz and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-12 with Technology & Engineering categories.
This book, edited by Prof. Marta Rencz and Prof Andras Poppe, Budapest University of Technology and Economics, and by Prof. Lorenzo Codecasa, Politecnico di Milano, collects fourteen papers carefully selected for the “thermal and electro-thermal system simulation” Special Issue of Energies. These contributions present the latest results in a currently very “hot” topic in electronics: the thermal and electro-thermal simulation of electronic components and systems. Several papers here proposed have turned out to be extended versions of papers presented at THERMINIC 2019, which was one of the 2019 stages of choice for presenting outstanding contributions on thermal and electro-thermal simulation of electronic systems. The papers proposed to the thermal community in this book deal with modeling and simulation of state-of-the-art applications which are highly critical from the thermal point of view, and around which there is great research activity in both industry and academia. In particular, contributions are proposed on the multi-physics simulation of families of electronic packages, multi-physics advanced modeling in power electronics, multiphysics modeling and simulation of LEDs, batteries and other micro and nano-structures.