Fabrication And Electrical Characterization Of Algan Gan Heterostructures
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Fabrication And Electrical Characterization Of Algan Gan Heterostructures
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Author : Michael Anasarah Awaah
language : en
Publisher:
Release Date : 2006
Fabrication And Electrical Characterization Of Algan Gan Heterostructures written by Michael Anasarah Awaah and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Gallium nitride categories.
Algan Gan Heterostructures
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Author : Michael Awaah
language : en
Publisher: LAP Lambert Academic Publishing
Release Date : 2010-06
Algan Gan Heterostructures written by Michael Awaah and has been published by LAP Lambert Academic Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-06 with Aluminum nitride categories.
Group III-nitrides, in particular GaN and its heterostructures with AlGaN, have some unique electronic material properties that make these material systems almost ideally suited for the fabrication of a number of high-performance electronic and optoelectronic devices. A study of MBE grown Al0.2Ga0.8N/GaN heterostructures was conducted. Rectifying and ohmic contacts were fabricated for electrical characterization of the heterostructure. These contacts were fabricated by sputter deposition of metal films. A multi-layer Ti/Al/Ni/Au (15/60/35/50nm) metallization and subsequent anneal was employed to form ohmic contacts. A contact resistivity of 2.0 x 10-3 Ohm.cm2 was obtained. Though this value was high but was expected of unintentionally doped n/n Ni Al0.2Ga0.8N/GaN unipolar heterostructure. Rectifying contacts were obtained by depositing Ni on the AlGaN/GaN film, overcoated with Au (Ni/Au, 20/180nm). Fabricated HEMT devices exhibited transistor behavior with transconductance values between of 1.0 and 2.5 mS; however, saturation was not observed. A drift mobility ~130 cm2/V.s was estimated from the calculated transconductance.
Fabrication And Characterization Of Algan Gan Heterostructure Devices For Hydrogen Gas Sensing At High Temperatures
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Author : Junghui Song
language : en
Publisher:
Release Date : 2005
Fabrication And Characterization Of Algan Gan Heterostructure Devices For Hydrogen Gas Sensing At High Temperatures written by Junghui Song and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Aluminum compounds categories.
In addition, the thermal stress effects on geometrical structures and electrical characteristics of AlGaN/GaN heterostructures were studied. From the physical characterization, significant morphological and structural damages on Pt-, IrPt-, and PdAg-AlGaN/GaN Schottky diodes tested for gas sensor experiments up to 9000C were observed. These results clarify the influence of sensor performance from thermal stress at high temperatures. Moreover, electrical characterization to investigate the thermal stress effects showed interesting results. After post annealing at 7000C for 10 min, while the carrier concentration was decreased due to the reduction of effective barrier thickness, the interface trap density is significantly reduced with a shorter emission time constant. The leakage current is also remarkably decreased after post-annealing process, which is attributed to Schottky barrier height increase by post annealing. As a result, short time thermal stress at around 7000C serve to improve the device performance of AlGaN/GaN heterostructure devices.
Gan Based Materials And Devices Growth Fabrication Characterization And Performance
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Author : Robert F Davis
language : en
Publisher: World Scientific
Release Date : 2004-05-07
Gan Based Materials And Devices Growth Fabrication Characterization And Performance written by Robert F Davis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-05-07 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Electrical Characterization Of Gan And Algan Gan Heterostructures By Molecular Beam Epitaxy
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Author :
language : en
Publisher:
Release Date : 2002
Electrical Characterization Of Gan And Algan Gan Heterostructures By Molecular Beam Epitaxy written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors
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Author : Peter Javorka
language : en
Publisher:
Release Date : 2004
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors written by Peter Javorka and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Fabrication And Characterization Of Heterojunction Transistors
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Author : Chien-Fong Lo
language : en
Publisher:
Release Date : 2011
Fabrication And Characterization Of Heterojunction Transistors written by Chien-Fong Lo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Passivation is one of the most important parts in device processing for preventing degradation from various environmental conditions and promising a better device performance. Simply, ozone treatment of AlN on AlN/GaN heterostructures produced effective aluminum oxide surface passivation and chemical resistance to the AZ positive photoresist developer used for subsequent device fabrication. Metal oxide semiconductor diode-like gate current-voltage characteristics and minimal drain current degradation during gate pulse measurements were observed. With an additional oxygen plasma treatment on the gate area prior to the gate metal deposition, enhancement-mode AlN/GaN HEMTs were realized. In addition, for AlGaN/GaN HEMTs in high electrical field applications, a high-dielectric-strength SiNx passivation over an optimum thickness was needed to suppress surface flashover during a high voltage or high power operation. An excellent isolation blocking voltage of 900 V with a leakage current at 1 μA/mm was obtained across a nitrogen-implanted isolation-gap of 10 μm between two Ohmic pads.
Fabrication Of Algan Gan Inn High Electron Mobility Transistors
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Author :
language : en
Publisher:
Release Date : 2002
Fabrication Of Algan Gan Inn High Electron Mobility Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
The effect of various growth parameters such as temperature, V/III ratio and the growth rate on the properties of InN layers grown by MOCVD was investigated. The InN layers were deposited onto 2 micrometer thick GaN-on-c-plane sapphire films. In addition, the different precursor injection procedures were investigated. Since the growth of InN required very low deposition temperatures around 600 deg. C, for the deposition of InN/GaN heterostructures similar experiments were performed to optimize the growth of GaN at comparable growth temperatures. The fabrication of GaN/InN/GaN structures for device applications was complicated by intermixing and surface segregation of indium and defect formation in heterostructures related to the large lattice mismatch of 10% between GaN and InN.
Development Of Fabrication And Characterization Techniques For Inorganic Organic And Hybrid Semiconductor Devices
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Author : Elmer G. Rivera
language : en
Publisher:
Release Date : 2015
Development Of Fabrication And Characterization Techniques For Inorganic Organic And Hybrid Semiconductor Devices written by Elmer G. Rivera and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with Electronic dissertations categories.
Different semiconducting types are applied in various fields of the semiconductor industry: organic, inorganic and hybrid. Each of these semiconducting types of materials have their own strengths as well as their weakness. Inorganic materials possess low absorption and high carrier mobility while organic materials possess high absorption and low carrier mobility. Inorganic/organic hybrid semiconducting devices take advantage of the mixing of these two types of semiconductors. By building a heterojunction with inorganic and organic materials, the advantages of each individual material is passes onto this new hybrid while cancelling out the disadvantages. In this master thesis, the fabrication procedure and characterization techniques are studied for inorganic, organic and hybrid semiconducting devices. For the inorganic materials, fabrication was performed in the MicroFabrication Facility in order to properly achieve small features in the micrometer range. Device processing was performed to achieve a high-electron mobility transistor using AlGaN/GaN and AlInN/GaN heterostructures. The fabrication procedure involved the defining of features through photolithography, ion mill etching, and electron-beam evaporation. Electrical characterization was performed on both heterostructures to make a comparison. The organic device studied was a photoconductor using the conducting polymer P3HT and an optical and electro-optic comparison was made with the addition of MWCNT into the polymer matrix. A hybrid pn-junction diode was fabricated using P3HT and electrical measurements were performed and analyzed through an equivalent circuit to characterize and compare it to a P3HT:MWCNT active layer for the pn-junction.
Process Development And Characterization Of Algan Gan Heterostructure Field Effect Transistors
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Author :
language : en
Publisher:
Release Date : 1999
Process Development And Characterization Of Algan Gan Heterostructure Field Effect Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with categories.