Fabrication Characterization And Modeling Of Npn Ingap Gaas Heterojunction Bipolar Transistors

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Fabrication Characterization And Modeling Of Npn Ingap Gaas Heterojunction Bipolar Transistors

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Author : Ying Wu
language : en
Publisher:
Release Date : 1996

Fabrication Characterization And Modeling Of Npn Ingap Gaas Heterojunction Bipolar Transistors written by Ying Wu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.

Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation

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Author : Xiang Liu
language : en
Publisher:
Release Date : 2011

Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation written by Xiang Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Bipolar transistors categories.

Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.

Inp Based Npn And Pnp Heterojunction Bipolar Transistor Design Technology And Characterization For Enhanced High Frequency Power Amplification

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Author : Donald James Sawdai
language : en
Publisher:
Release Date : 1999

Inp Based Npn And Pnp Heterojunction Bipolar Transistor Design Technology And Characterization For Enhanced High Frequency Power Amplification written by Donald James Sawdai and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with categories.

Ieice Transactions On Electronics

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Author :
language : en
Publisher:
Release Date : 2007

Ieice Transactions On Electronics written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Electronic journals categories.

Fabrication Of Gaas Devices

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Author : Albert G. Baca
language : en
Publisher: IET
Release Date : 2005-09

Fabrication Of Gaas Devices written by Albert G. Baca and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-09 with Technology & Engineering categories.

This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Chemical Abstracts

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Author :
language : en
Publisher:
Release Date : 2002

Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.

Design Simulation And Modeling Of Collector Up Galnp Gaas Heterojunction Bipolar Transistors

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Author : Mohan K. Chirala
language : en
Publisher:
Release Date : 2002

Design Simulation And Modeling Of Collector Up Galnp Gaas Heterojunction Bipolar Transistors written by Mohan K. Chirala and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.

The immense demand for communication systems world wide has created an enormous market for semiconductors devices in variegated applications. While scaled CMOS is consolidating its stronghold in the analog and RF domains, the wide gamut of microwave frequencies is being competed for by the various types of III-V heterojunction based semiconductor devices, which were made amenable to high-volume production, thanks to rapid improvements in bulk-processing and fabrication techniques in the last decade. Among these devices, the quest for faster, more powerful and low cost transistors has led researchers to investigate innovative topologies. The availability of powerful CAD tools that incorporate the most intricate physical phenomenon in the modeling process has provided a much needed impetus to this ongoing research. Of the scores of disparate devices that have been investigated, Heterojunction Bipolar Transistors (HBTs) have carved a niche for themselves owing to their high speeds and greater power handling capabilities. In this work, the design of an innovative HBT with a collector-up topology, i.e., with the collector situated on top of the device and emitter on the substrate side, is carried out and optimized for maximizing the high frequency performance. The material system used here is Ga x In 1-x P/GaAs (with x=0.51 indicating lattice matched composition), which has relatively superior material properties and etching characteristics than the conventional Al x Ga 1 -xAs/GaAs material system. The material properties of the ternary were investigated and the most suitable values were ascertained through meticulous research. These parameters, along with the mobility models (that were derived by investigating published results), were made compatible to an emitter-up HBT and incorporated into a two dimensional, physically-based, numerical simulator called ATLAS by Silvaco Inc. The motive was to verify the correctness of the material parameters and models derived. The simulation results compared favorably with the published results. With these verified material parameters and mobility models, a collector-up GaInP/GaAs HBT structure with unetched extrinsic emitter was simulated. After a performance appraisal with the emitter-up structure, the impact of having an undercut in the extrinsic base region was investigated. It was found that this undercut drastically improved the high frequency performance as well as DC characteristics of the collector-up structure. This was documented by a significant increase in cutoff frequency (f T) from 109 GHz to 140 GHz. It was even more pronounced in maximum frequency of oscillation (f max), which is more practically useful than cutoff frequency, from 76 GHz to 233 GHz. These simulation results are much better than the practically experimented values. The high frequency parametric values described here were achieved after scrupulously optimizing the collector-up HBT structure.

Demonstration And Modeling Of A Nitride Based Heterojunction Bipolar Transistor Using Nanomembrane Transfer

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Author : Clincy Cheung
language : en
Publisher:
Release Date : 2023

Demonstration And Modeling Of A Nitride Based Heterojunction Bipolar Transistor Using Nanomembrane Transfer written by Clincy Cheung and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023 with categories.

Heterojunction bipolar transistors (HBT) are sought as a building block for implementation of modern broadband electronics, defense applications, and other mm-wave electronic systems demanding in high-speed and high-power performance. The push for greater frequency performance, higher power densities and reliability have pushed research towards wide-bandgap materials such as Gallium Nitride (GaN) given its superior intrinsic material properties, providing for higher breakdown voltage, and enabling higher power performance. However, GaN faces a fundamental limitation with p-type doping, limiting its adoption in RF power electronics. Attempts at a wide bandgap HBT to-date has exclusively relied on epitaxial growth using metal-organic chemical vapor deposition or molecular beam epitaxy (MBE) to fabricate a GaN-based transistor; however, none have yielded a device with both sufficient current gain and transition frequency - both key measures of performance in a bipolar transistor. Alternative materials for the different HBT layers have been considered but are limited by significant lattice mismatch. To bypass p-type GaN limitations and improve the base-collector junction with minimal interface trap density, a nanomembrane interlayer device transfer is proposed as an alternative for fabrication of an HBT. There are two aims in this dissertation: to demonstrate an experimental HBT with a sufficient current gain above 20 and demonstrate using computer-aided modeling that sufficient frequency performance can be achieved - both to demonstrate that a wide-bandgap HBT is both possible and worth further exploration for RF electronics. In Chapter 1, the landscape of research into wide-bandgap bipolar transistors is presented. In Chapter 2, multiple methods of integration for different diode pairs within the HBT are evaluated for probability of success in the overall device, where a GaAs-GaN base-collector diode is demonstrated to have the best performance using nanomembrane layer transfer. Additionally, an MBE-grown AlGaAs-GaAs film stack was transferred and demonstrated an emitter-base structure can be transferred with no degradation in performance. In Chapter 3, fabrication of the HBT is demonstrated using the best methods selected from Chapter 2, where a AlGaAs-GaAs-GaN HBT was demonstrated to have a current gain greater than 70. In Chapter 4, technology computer-aided design simulations were developed to validate the DC results shown in Chapter 2 and 3, and simulated transition frequencies of at least 60 GHz for the experimental structure fabricated in Chapter 3. Finally, in Chapter 5, next steps are outlined for exploration beyond this initial proof-of-concept device. Taken altogether, this dissertation serves to demonstrate a device structure with the potential to vastly exceed existing solutions that can be applied to a vast array of wide-bandgap materials without being limited by its p-type analogues, enabling performance for a wide array of applications in the next generations of electronics.

Jjap

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Author :
language : en
Publisher:
Release Date : 2002

Jjap written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Engineering categories.

Electrical Electronics Abstracts

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Author :
language : en
Publisher:
Release Date : 1997

Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.