Fabrication Of Gaas Devices
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Fabrication Of Gaas Devices
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Author : Albert G. Baca
language : en
Publisher: IET
Release Date : 2005-09
Fabrication Of Gaas Devices written by Albert G. Baca and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-09 with Technology & Engineering categories.
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Fabrication Of Gaas Devices
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Author : A. G. Baca
language : en
Publisher:
Release Date : 2005
Fabrication Of Gaas Devices written by A. G. Baca and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Bipolar transistors categories.
The following topics are dealt with: semiconductor properties, semiconductor growth, cleaning; passivation; dry etching; ohmic contacts; Schottky contacts; field effect transistors; heterojunction bipolar transistors; wet oxidation; optoelectronic device; and MIS GaAs device
Gaas High Speed Devices
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Author : C. Y. Chang
language : en
Publisher: John Wiley & Sons
Release Date : 1994-10-28
Gaas High Speed Devices written by C. Y. Chang and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-10-28 with Technology & Engineering categories.
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Modern Gaas Processing Methods
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Author : Ralph Williams
language : en
Publisher: Artech House Microwave Library
Release Date : 1990
Modern Gaas Processing Methods written by Ralph Williams and has been published by Artech House Microwave Library this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990 with Technology & Engineering categories.
Containing updated material from the first edition, this book adds several chapters covering RF testing techniques, reliability, process and manufacturing disciplines and process development (experiment by design).
Vlsi Fabrication Principles
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Author : Sorab K. Ghandhi
language : en
Publisher: John Wiley & Sons
Release Date : 1994-03-31
Vlsi Fabrication Principles written by Sorab K. Ghandhi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-03-31 with Technology & Engineering categories.
Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Gaas Microelectronics
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Author : Norman G. Einspruch
language : en
Publisher: Academic Press
Release Date : 2014-12-01
Gaas Microelectronics written by Norman G. Einspruch and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-01 with Technology & Engineering categories.
VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Introduction To Semiconductor Technology
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Author : Cheng Wang
language : en
Publisher: Wiley-Interscience
Release Date : 1990-02
Introduction To Semiconductor Technology written by Cheng Wang and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990-02 with Technology & Engineering categories.
Aimed at engineers and researchers in electronics and materials science, this volume provides coverage of practical design considerations and applications of gallium arsenide (GaAs) and related compounds, and presents both theoretical and practical approaches to the subject.
Gallium Arsenide Electronics Materials And Devices A Strategic Study Of Markets Technologies And Companies Worldwide 1999 2004
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Author : R. Szweda
language : en
Publisher: Elsevier
Release Date : 2000-12-05
Gallium Arsenide Electronics Materials And Devices A Strategic Study Of Markets Technologies And Companies Worldwide 1999 2004 written by R. Szweda and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-05 with Technology & Engineering categories.
The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
A Review Of The State Of The Art Of Gaas Research
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Author : Christopher M. Snowden
language : en
Publisher:
Release Date : 1986
A Review Of The State Of The Art Of Gaas Research written by Christopher M. Snowden and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Gallium arsenide categories.
Gaas Devices And Circuits
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Author : Michael S. Shur
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-21
Gaas Devices And Circuits written by Michael S. Shur and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-21 with Technology & Engineering categories.
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.