Fundamentals Of Novel Oxide Semiconductor Interfaces
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Fundamentals Of Novel Oxide Semiconductor Interfaces
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Author : C. R. Abernathy
language : en
Publisher:
Release Date : 2004
Fundamentals Of Novel Oxide Semiconductor Interfaces written by C. R. Abernathy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
Ferroelectric Thin Films Xii Volume 784
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Author :
language : en
Publisher:
Release Date : 2004-04-09
Ferroelectric Thin Films Xii Volume 784 written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-04-09 with Science categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, offers scientific and technological information on ferroelectric thin films from an international mix of academia, industry and government organizations.
Materials Fundamentals Of Gate Dielectrics
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Author : Alexander A. Demkov
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-05-24
Materials Fundamentals Of Gate Dielectrics written by Alexander A. Demkov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-05-24 with Science categories.
This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
Integration Of Functional Oxides With Semiconductors
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Author : Alexander A. Demkov
language : en
Publisher: Springer Science & Business Media
Release Date : 2014-02-20
Integration Of Functional Oxides With Semiconductors written by Alexander A. Demkov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-02-20 with Technology & Engineering categories.
This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Thermoelectric Materials 2003 Volume 793
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Author : G. S. Nolas
language : en
Publisher:
Release Date : 2004-03-17
Thermoelectric Materials 2003 Volume 793 written by G. S. Nolas and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-03-17 with Science categories.
The measure of a thermoelectric material is given by the material's figure of merit. For over three decades the best thermoelectric materials had a ZT = 1. Recently, however, there are reports of new methods of materials synthesis that result in improvements beyond this performance. In addition, rapid characterization, as well as faster theoretical modeling of thermoelectric materials, has resulted in a more rapid evaluation of new materials. This book offers a look at these results and provides a benchmark for the current state in the field of thermoelectric materials research and development. The focus is on new and innovative directions that will lead to the next generation thermoelectric materials for small-scale refrigeration and power generation applications. The book emphasizes the multidisciplinary nature of the research needed to advance the science and technology of the field. Both theoretical and experimental studies are featured. Topics include: low-dimensional systems and nanocomposites; devices; oxides; skutterudites; complex bulk materials and measurements; novel approaches; and thermoelectric materials and technology.
Amorphous Oxide Semiconductors
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Author : Hideo Hosono
language : en
Publisher: John Wiley & Sons
Release Date : 2022-05-31
Amorphous Oxide Semiconductors written by Hideo Hosono and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-05-31 with Technology & Engineering categories.
AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
Eye Essentials Ophthalmic Imaging E Book
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Author : James Stuart William Wolffsohn
language : en
Publisher: Elsevier Health Sciences
Release Date : 2008-03-27
Eye Essentials Ophthalmic Imaging E Book written by James Stuart William Wolffsohn and has been published by Elsevier Health Sciences this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-03-27 with Medical categories.
Eye Essentials is a major new series which provides authoritative and accessible information for all eye care professionals, whether in training or in practice. Each book is a rapid revision aid for students taking higher professional qualifications and a handy clinical reference guide for practitioners in busy clinics. Highly designed with synoptic text, handy tables, key bullet points, summaries, icons and stunning full colour illustrations, the books have rapidly established themselves as the essential eye clinic pocket books. Ophthalmic Imaging explains and demonstrates the complete technology involved with imaging, from imaging chip and colour information capture to high-end instrumentation as this is critical to a full understanding of the potential and limitations of ocular imaging. - Practical advice - Evidence-based - Highly designed, modern with icons, tables, synoptic text - Very practical – with highlighted advice sections for patients, handy tables - White coat pocket book - Key opinion leaders for authors – not contributed so consistency of style and presentation - Pulls the information together in one place very briefly - Well illustrated
The Role Of Defects At Functional Interfaces Between Polar And Non Polar Perovskite Oxides
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Author : Felix Gunkel
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2013
The Role Of Defects At Functional Interfaces Between Polar And Non Polar Perovskite Oxides written by Felix Gunkel and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
The Chemical Vapor Depositions Of Hfo2 And Hfo2 Sio2 Nanolaminates
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Author : Curtiss Jae Hella
language : en
Publisher:
Release Date : 2006
The Chemical Vapor Depositions Of Hfo2 And Hfo2 Sio2 Nanolaminates written by Curtiss Jae Hella and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface
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Author : B.E. Deal
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface written by B.E. Deal and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.