Gate Stack And Silicide Issues In Silicon Processing
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Gate Stack And Silicide Issues In Silicon Processing
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Author :
language : en
Publisher:
Release Date : 2002
Gate Stack And Silicide Issues In Silicon Processing written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Electric leakage categories.
High K Gate Dielectrics
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Author : Michel Houssa
language : en
Publisher: CRC Press
Release Date : 2003-12-01
High K Gate Dielectrics written by Michel Houssa and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-12-01 with Science categories.
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Silicon Nitride Silicon Dioxide Thin Insulating Films And Other Emerging Diele C Trics Viii
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Author : Ram Ekwal Sah
language : en
Publisher: The Electrochemical Society
Release Date : 2005
Silicon Nitride Silicon Dioxide Thin Insulating Films And Other Emerging Diele C Trics Viii written by Ram Ekwal Sah and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Nature categories.
Rapid Thermal And Other Short Time Processing Technologies
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Author : Fred Roozeboom
language : en
Publisher: The Electrochemical Society
Release Date : 2000
Rapid Thermal And Other Short Time Processing Technologies written by Fred Roozeboom and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Technology & Engineering categories.
The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.
Silicon Materials Processing Characterization And Reliability Volume 716
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Author : Janice L. Veteran
language : en
Publisher:
Release Date : 2002-10-11
Silicon Materials Processing Characterization And Reliability Volume 716 written by Janice L. Veteran and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-10-11 with Science categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Advanced Short Time Thermal Processing For Si Based Cmos Devices 2
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Author : Mehmet C. Öztürk
language : en
Publisher: The Electrochemical Society
Release Date : 2004
Advanced Short Time Thermal Processing For Si Based Cmos Devices 2 written by Mehmet C. Öztürk and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
Materials Fundamentals Of Gate Dielectrics
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Author : Alexander A. Demkov
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-05-24
Materials Fundamentals Of Gate Dielectrics written by Alexander A. Demkov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-05-24 with Science categories.
This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
High Dielectric Constant Materials
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Author : Howard Huff
language : en
Publisher: Springer Science & Business Media
Release Date : 2005-11-02
High Dielectric Constant Materials written by Howard Huff and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-11-02 with Technology & Engineering categories.
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Sige Materials Processing And Devices
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Author : David Louis Harame
language : en
Publisher: The Electrochemical Society
Release Date : 2004
Sige Materials Processing And Devices written by David Louis Harame and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
Semiconductor Technology Istc 2001
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Author : Ming Yang
language : en
Publisher:
Release Date : 2001
Semiconductor Technology Istc 2001 written by Ming Yang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Semiconductors categories.