High Q Cmos Compatible Poly Sige Electrostatic Rf Mems Resonators

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High Q Cmos Compatible Poly Sige Electrostatic Rf Mems Resonators

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Author : Brian Lee Bircumshaw
language : en
Publisher:
Release Date : 2005

High Q Cmos Compatible Poly Sige Electrostatic Rf Mems Resonators written by Brian Lee Bircumshaw and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.

Dissertation Abstracts International

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Author :
language : en
Publisher:
Release Date : 2006

Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Dissertations, Academic categories.

Piezoelectric Aluminum Nitride Mems Resonators For Rf Signal Processing

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Author : Philip Jason Stephanou
language : en
Publisher:
Release Date : 2006

Piezoelectric Aluminum Nitride Mems Resonators For Rf Signal Processing written by Philip Jason Stephanou and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.

17th Ieee International Conference On Micro Electro Mechanical Systems

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Author :
language : en
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
Release Date : 2004

17th Ieee International Conference On Micro Electro Mechanical Systems written by and has been published by Institute of Electrical & Electronics Engineers(IEEE) this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.

Index To Ieee Publications

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Author : Institute of Electrical and Electronics Engineers
language : en
Publisher:
Release Date : 1997

Index To Ieee Publications written by Institute of Electrical and Electronics Engineers and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electric engineering categories.

Issues for 1973- cover the entire IEEE technical literature.

Proceedings

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Author :
language : en
Publisher:
Release Date : 2005

Proceedings written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Application-specific integrated circuits categories.

International Aerospace Abstracts

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Author :
language : en
Publisher:
Release Date : 1999

International Aerospace Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Aeronautics categories.

Thin Film Encapsulation Of High Frequency Mems Resonator For Rf Applications

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Author : Kuan-Lin Chen
language : en
Publisher:
Release Date : 2010

Thin Film Encapsulation Of High Frequency Mems Resonator For Rf Applications written by Kuan-Lin Chen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.

Wireless communication has greatly impacted our daily life since the first radio system was invented. Applications, such as cellular phone, satellite television, GPS navigation, and wireless Internet network, are driving the development of RF components to the direction of being smaller, cheaper and more power saving and therefore this topic has been one of the hottest research areas in MEMS field. MEMS resonators have a great potential for replacing conventional resonators used in portable wireless applications because of their merits of small size, high quality factor (Q), and low power consumption. There are also great interests in using coupled micro-resonators as band-pass filters and many research groups have already got exciting results. However, high motional impedance still remains a big obstacle for commercialization of MEMS resonators in RF applications. Despite the advance of device performance, packaging for MEMS resonators remains a critical challenge. Because of their extreme sensitivity to the environment, MEMS resonators need a vacuum packaging to achieve high quality factors (Q) and enable post-MEMS CMOS integration. The promising on-chip application also requires a CMOS compatible packaging process. Due to the stringent RF requirement, electrical properties and hermiticity of packaging are also very important. This work aims to provide a solution for a practical RF MEMS resonator that has low impedance as well as a reliable packaging. First, this work presents a thorough study of a wafer-level epitaxial silicon encapsulation process in making RF MEMS resonators. The epitaxial silicon encapsulation process developed at Stanford University has been proven to have high mechanical robustness and it provides a low-pressure environment to resonating structures. The transmission loss of silicon interconnect was measured at RF ranges in this work. The transmission loss was also modeled for device designers to simulate the interconnect properties at the design phase. Secondly, a 200 MHz width-extensional mode dielectrically-driven resonator is presented. High-k dielectric material was used to enhance the transduction and reduce the motional impedance. A modified encapsulation process was developed to package the resonator. The resonator was demonstrated to have high Q in the package. In addition, this work presents an integrated solution for wafer-level packaging and electrostatic actuation of out-of-plane RF MEMS resonators. By integrating the electrodes into the epitaxial-grown silicon layer, both the encapsulation and the out-of-plane actuation can be built in one process step, which results in an ultra-compact and robust packaging. First, designs and fabrication processes of the out-of-plane electrode are described. The mechanical and electrical properties of the electrode are discussed, modeled and characterized. A 200 kHz torsional mode beam resonator and a 12 MHz transverse-mode differential square plate resonator were fabricated using this packaging method and their performances are presented and discussed. This work also presents a 13 MHz mechanically coupled filter that is encapsulated using the same integration process.

Electrostatic Transduction For Mems Resonators

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Author : Sunil Ashok Bhave
language : en
Publisher:
Release Date : 2004

Electrostatic Transduction For Mems Resonators written by Sunil Ashok Bhave and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.

Rf Mems Resonators For Mass Sensing Applications

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Author : Ivan Fernando Rivera
language : en
Publisher:
Release Date : 2015

Rf Mems Resonators For Mass Sensing Applications written by Ivan Fernando Rivera and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with Engineering categories.

Sensing devices developed upon resonant microelectromechanical and nanoelectromechanical (M/NEMS) system technology have become one of the most attractive areas of research over the past decade. These devices make exceptional sensing platforms because of their miniscule dimensions and resonant modes of operation, which are found to be extremely sensitive to added mass. Along their unique sensing attributes, they also offer foundry compatible microfabrication processes, low DC power consumption, and CMOS integration compatibility. In this work, electrostatically and piezoelectrically actuated RF MEMS bulk resonators have been investigated for mass sensing applications. The capacitively-transduced resonators employed electrostatic actuation to achieve desired resonance mode shapes. These devices were fabricated on silicon-on-insulator (SOI) substrates with a device layer resistivity ranging from 0.005 ©9 cm to 0.020 ©9 cm. The electrode-to-resonator capacitive gap was defined by two different techniques: oxidation enabled gap reduction and sacrificial atomic layer deposition (ALD). For oxidation enabled gap reduction, a hard mask composed of silicon nitride and polysilicon is deposited, patterned, and defined using standard MEMS thin-film layer deposition and fabrication techniques. The initial lithographically-defined capacitive gap of 1 ©Ơm is further reduced to ~300 nm by a wet furnace oxidation process. Subsequently, the reduced gap is transferred to the device layer using a customized dry high-aspect-ratio dry etching technique. For sacrificial approach, a ~100 nm-thin ALD aluminum oxide sidewall spacer is chemically etched away as the last microfabrication step to define the ~100 nm capacitive gap. Small capacitive gaps developed in this work results in small motional resistance (Rm) values, which relax the need of the read-out circuitry by enhancing the signal transduction.