High Quality Zno
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High Quality Zno Films Prepared By Ald At Low Temperatures Using Dezn And Nitrous Oxide
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Author :
language : en
Publisher:
Release Date : 2008
High Quality Zno Films Prepared By Ald At Low Temperatures Using Dezn And Nitrous Oxide written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Toward The Optimization Of Low Temperature Solution Based Synthesis Of Zno Nanostructures For Device Applications
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Author : Hatim Alnoor
language : en
Publisher: Linköping University Electronic Press
Release Date : 2017-10-06
Toward The Optimization Of Low Temperature Solution Based Synthesis Of Zno Nanostructures For Device Applications written by Hatim Alnoor and has been published by Linköping University Electronic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-06 with categories.
One-dimensional (1D) nanostructures (NSs) of Zinc Oxide (ZnO) such as nanorods (NRs) have recently attracted considerable research attention due to their potential for the development of optoelectronic devices such as ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). The potential of ZnO NRs in all these applications, however, would require synthesis of high crystal quality ZnO NRs with precise control over the optical and electronic properties. It is known that the optical and electronic properties of ZnO NRs are mostly influenced by the presence of native (intrinsic) and impurities (extrinsic) defects. Therefore, understanding the nature of these intrinsic and extrinsic defects and their spatial distribution is critical for optimizing the optical and electronic properties of ZnO NRs. However, identifying the origin of such defects is a complicated matter, especially for NSs, where the information on anisotropy is usually lost due to the lack of coherent orientation. Thus, the aim of this thesis is towards the optimization of the lowtemperature solution-based synthesis of ZnO NRs for device applications. In this connection, we first started with investigating the effect of the precursor solution stirring durations on the deep level defects concentration and their spatial distribution along the ZnO NRs. Then, by choosing the optimal stirring time, we studied the influence of ZnO seeding layer precursor’s types, and its molar ratios on the density of interface defects. The findings of these investigations were used to demonstrate ZnO NRs-based heterojunction LEDs. The ability to tune the point defects along the NRs enabled us further to incorporate cobalt (Co) ions into the ZnO NRs crystal lattice, where these ions could occupy the vacancies or interstitial defects through substitutional or interstitial doping. Following this, high crystal quality vertically welloriented ZnO NRs have been demonstrated by incorporating a small amount of Co into the ZnO crystal lattice. Finally, the influence of Co ions incorporation on the reduction of core-defects (CDs) in ZnO NRs was systematically examined using electron paramagnetic resonance (EPR).
High Quality Zno
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Author :
language : en
Publisher:
Release Date : 2009
High Quality Zno written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.
Zno Nanocrystals And Allied Materials
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Author : M S Ramachandra Rao
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-09-12
Zno Nanocrystals And Allied Materials written by M S Ramachandra Rao and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-09-12 with Science categories.
ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.
Fabrication And Characterisation Of Device Quality Zno Nanostructures
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Author : Augustine Che Mofor
language : en
Publisher: Cuvillier Verlag
Release Date : 2007-07-11
Fabrication And Characterisation Of Device Quality Zno Nanostructures written by Augustine Che Mofor and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-07-11 with Technology & Engineering categories.
Since ZnO resurfaced as a very promising semiconductor material for applications in microelectronics, optoelectronics, sensor technology, biomedicine and spin electronics, producing high purity ZnO nanostructures for such applications has rather proven to be challenging. This book first revises the main properties of ZnO as a semiconductor and nanomaterial and also some fabrication techniques for nanostructures. It later concentrates on the development of a vapour transport system for the growth of high quality ZnO nanostructures (mainly nanorods). The book attempts to explain the influence of reactor pressure, growth temperature and growth time on the morphology and quality of ZnO nanorods. While intrinsic (undoped) ZnO nanorods were grown for extensive analysis, transition metal-doped ZnO nanorods were also fabricated and investigated for possible applications in magnetoelectronics/spintronics. Conventional material characterisation methods are also revisited and employed to analyse the crystalline quality, optical, electrical and magnetic properties of ZnO nanorods. Since the book is writtenin an application-oriented fashion, it extends to the fabrication of ZnO nanrorod-based device structures. Here, nano p-n junctions and nano ZnO/ZnMgO quantum well structures are also presented. At the end, the reader clearly sees how ZnO nanorods of extremely high crystalline quality can be grown using an unconventional technique.
Method Of Choice For Fabrication Of High Quality Zno Based Schottky Diodes
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Author : Stefan Müller
language : en
Publisher:
Release Date : 2014
Method Of Choice For Fabrication Of High Quality Zno Based Schottky Diodes written by Stefan Müller and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Molecular Beam Epitaxy Growth And Characterization Of Zno Based Layers And Heterostructures
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Author : Abdelhamid Abdelrehim Mahmoud Elshaer
language : en
Publisher: Cuvillier Verlag
Release Date : 2008
Molecular Beam Epitaxy Growth And Characterization Of Zno Based Layers And Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
High Quality Zno Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy
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Author : Yun Zhang
language : en
Publisher:
Release Date : 2004
High Quality Zno Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy written by Yun Zhang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Described in this thesis are the growth and characterization of high quality ZnO epitaxy layers. Zinc oxide (ZnO) epitaxy layers were grown on sapphire and epi-GaN substrates respectively, using plasma assisted molecular beam epitaxy (MBE) . Various growth conditions, such as growth temperature, II/VI ratio, and buffer layers, were employed to optimize the quality of the ZnO film. The subsequent characterization of the films was carried out to evaluate the surface, optical and crystalline properties of the film, using AFM, SEM, PL and XRD techniques. It was found out that the high quality of the ZnO film was grown on epi-GaN substrates under the Low temperature of ~ 300 degrees C, flash annealing up to ~680 degrees C, followed by high temperature growth at ~600 degrees C.
High Rate Deposition Of High Quality Zno
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Author :
language : en
Publisher:
Release Date : 2010
High Rate Deposition Of High Quality Zno written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
High quality ZnO:Al (AZO) thin films were prepared on glass substrates by direct current filtered cathodic arc deposition. Substrate temperature was varied from room temperature to 425oC, and samples were grown with and without the assistance of low power oxygen plasma (75W). For each growth condition, at least 3 samples were grown to give a statistical look at the effect of the growth environment on the film properties and to explore the reproducibility of the technique. Growth rate was in the 100-400 nm/min range but was apparently random and could not be easily traced to the growth conditions explored. For optimized growth conditions, 300-600 nm AZO films had resistivities of 3-6 x 10-4?Omega cm, carrier concentrations in the range of 2-4 x 1020 cm3, Hall mobility as high as 55 cm2/Vs, and optical transmittance greater than 90percent. These films are also highly oriented with the c-axis perpendicular to the substrate and a surface roughness of 2-4 nm.
Optoelectronics Devices Based On Zinc Oxide Thin Films And Nanostructures
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Author : Sheng Chu
language : en
Publisher:
Release Date : 2011
Optoelectronics Devices Based On Zinc Oxide Thin Films And Nanostructures written by Sheng Chu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Light emitting diodes categories.
Optoelectronics devices based on ZnO thin films and nanostructures are discussed in this dissertation. A ZnO homojunction LED was demonstrated. Sb-doped p-type ZnO and Ga-doped n-type ZnO on Si (100) substrate were used for the LED device. After achieving ohmic contacts on both types of ZnO, the device showed rectifying current-voltage (I-V) characteristics. Under forward bias, the device successfully showed ultraviolet emissions. The emission properties were analyzed and the emission was confirmed to come from ZnO near band edge emissions. Further analysis showed that the emission mainly comes from the p-type layer of the device. A ZnO ultraviolet laser diode was fabricated and demonstrated. The device consists of Sb-doped p-type ZnO layer and Ga-doped n-type ZnO layer. In between p-layer and n-layer, a thin MgZnO/ZnO/MgZnO quantum well structure was inserted. In this device, random lasing mechanism plays an important role. When the diode was biased, the generation of light was enhanced by the carrier localization effect from the quantum well. The light was scattered between the ZnO random grain boundaries. Since the scattering effect can be so intense that some of the light can return to its original place to form close travel loop, as "random laser cavity". As long as the gain can overcome loss from scattering and material loss, lasing action can be demonstrated. An improved ZnO LED device was grown and characterized. The device grown on c-plane sapphire substrate can favor ultimate device applications due to the improved crystal quality of ZnO and the possibility of getting single crystallinity. A double heterostructure (MgZnO/ZnO/MgZnO) was also inserted in between p-layer and n-layer of the device to enhance the light output. The device showed much enhanced output power of 457 nW, which is two orders stronger than the LED fabricated on Si substrate. The optimization of high quality ZnO thin film on c-plane sapphire substrate was discussed. The devices in chapter two, three and four utilized Si or sapphire substrate, and are all in polycrystalline nature. To solve this problem and get the basis of high output power LEDs and lasers, single crystalline, two dimensional surface ZnO thin films were grown in chapter five. MgO/ZnO double buffer layers were used to accommodate the lattice mismatch. MgO thickness was found to be very important in achieving good ZnO thin film. An optimized growth also yields low background electron concentration and high mobility, which can enable future high quality p-type ZnO engineering. Our research was also expanded from ZnO thin films to ZnO nanostructures. The purpose of chapter six is to demonstrate a ZnO nanowire laser. ZnO nanowires are an excellent cavity and itself is a great gain material. We expanded Sb-doped p-type ZnO from thin films to ZnO nanowires. A p-type ZnO nanowire/n-type ZnO thin film p-n junction was achieved. The device showed lasing action when injection current was larger than ~50 mA. The lasing mechanism and gain/feedback were also discussed in detail.
