High Quality Zno Films Prepared By Ald At Low Temperatures Using Dezn And Nitrous Oxide
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High Quality Zno Films Prepared By Ald At Low Temperatures Using Dezn And Nitrous Oxide
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Author :
language : en
Publisher:
Release Date : 2008
High Quality Zno Films Prepared By Ald At Low Temperatures Using Dezn And Nitrous Oxide written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Epitaxial Zinc Oxide Thin Films And Nanowires
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Author : Maximilian Kolhep
language : en
Publisher:
Release Date : 2023*
Epitaxial Zinc Oxide Thin Films And Nanowires written by Maximilian Kolhep and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023* with categories.
State Of The Art Program On Compound Semiconductors 50 Sotapocs 50 And Processes At The Semiconductor Solution Interface 3
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Author : A. G. Baca
language : en
Publisher: The Electrochemical Society
Release Date : 2009-05
State Of The Art Program On Compound Semiconductors 50 Sotapocs 50 And Processes At The Semiconductor Solution Interface 3 written by A. G. Baca and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-05 with Compound semiconductors categories.
This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.
Doping In Zinc Oxide Thin Films
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Author : Zheng Yang
language : en
Publisher:
Release Date : 2009
Doping In Zinc Oxide Thin Films written by Zheng Yang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Photoluminescence categories.
Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 10 to 1.8 x 10 cm -3, the dominant PL line at 9 K changes from I 1 (3.368 - 3.371 eV), to I DA (3.317 - 3.321 eV), and finally to I 8 (3.359 eV). The dominance of I, due to ionized donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that I DA has characteristics of a donor acceptor pair transition, and use a detailed, quantitative analysis to argue that it arises from Ga Zn donors paired with Zn-vacancy (V Zn) acceptors. In this analysis, the Ga Zn 0/+ energy is well-known from two-electron satellite transitions, and the V Zn 0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p -type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature T C were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ~10 19 cm -3, indicating a carrier-mediated mechanism for ferromagnetism. The anomalous Hall effect was observed in the ZnO:Co thin films. The anomalous Hall coefficient and its dependence on longitudinal resistivity were analyzed. The presence of a side-jump contribution further supports an intrinsic origin for ferromagnetism in ZnO:Co thin films. These observations together with the magnetic anisotropy and magnetoresistance results, supports an intrinsic carrier-mediated mechanism for ferromagnetic exchange in ZnO:Co diluted magnetic semiconductor materials. Well-above room temperature and electron-concentration dependent ferromagnetism was observed in n -type ZnO:Mn films, indicating long-range ferromagnetic order. Magnetic anisotropy was also observed in these ZnO:Mn films, which is another indication for intrinsic ferromagnetism. The electron-mediated ferromagnetism in n -type ZnO:Mn contradicts the existing theory that the magnetic exchange in ZnO:Mn materials is mediated by holes. Microstructural studies using transmission electron microscopy were performed on a ZnO:Mn diluted magnetic semiconductor thin film. The high-resolution imaging and electron diffraction reveal that the ZnO:Mn thin film has a high structual quality and is free of clustering/segregated phases. High-angle annular dark field imaging and x-ray diffraction patterns further support the absence of phase segregation in the film. Magnetotransport was studied on the ZnO:Mn samples, and from these measurements, the temperature dependence of the resistivity and magnetoresistance, electron carrier concentration, and anomalous Hall coefficient of the sample is discussed. The anomalous Hall coefficient depends on the resistivity, and from this relation, the presence of the quadratic dependence term supports the intrinsic spin-obit origin of the anomalous Hall effect in the ZnO:Mn thin film.
High Quality Zno
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Author :
language : en
Publisher:
Release Date : 2009
High Quality Zno written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.
Novel Synthesis And Fabrication Of Zno Thin Films Via An Anhydrous Sol Gel Route
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Author : Lee Huat Kelly Koh
language : en
Publisher:
Release Date : 2008
Novel Synthesis And Fabrication Of Zno Thin Films Via An Anhydrous Sol Gel Route written by Lee Huat Kelly Koh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Thin films categories.
In this thesis, the aim to synthesise nano-sized zinc oxide particles in the form of thin films by using a novel anhydrous sol-gel technique was proposed, developed and demonstrated. The sol-gel was prepared using anhydrous zinc acetate [Zn(C2H3O2)2], monoethanolamine [H2NC2H4OH ] and isopropanol. The zinc oxide thin films were fabricated on soda-lime and fused silica substrates from both single- and multi- step spin-coating depositions. A range of widely reported zinc acetate concentrations, annealing temperatures and spin-coating speeds was chosen to characterise and study the various effects that these parameters have on the crystallographical, morphological, optical, electronic and electrical properties. The mean crystallite sizes and other structural properties (such as micro-strain and degree of crystallinity) were estimated using x-ray diffraction analysis. In combination with scanning electron microscopy, the increase in particle size was observed to be non-linear, changing from that of individual growth to that of particle conglomeration at higher precursor concentration and annealing temperature. Strong crystalline orientation along the (002) c-axis crystalline plane (with intensity ratio _ (002) value up to 0.95) was exhibited for films fabricated from low precursor concentrations, multi-layered and furnace pre-heated films. Optical transmittance and electronic bandgap was measured and calculated using UV-visible spectroscopy. Thin films with high transparency (> 98 % (T) after substrate subtraction) were achieved for films prepared from low precursor concentrations, while absorption wavelength and optical bandgap energy were consistent and in good agreement with recognised values of zinc oxide. Reproducibility and reliability tests carried out on the films show high morphological consistency and stability against temperature fluctuation, moisture and electrochemical effects. Surface morphologically, the films were dense. The electrical resistivity of the (single- and multi- layer) films, before and after forming gas treatment was also measured. The minimum resistivity value of all the single-layer films was calculated to be 9.58 x 102 _cm, and the electrical resistivity showed an overall mprovement (up to one order of magnitude). On contrary, the multi-layered films, which are more resistive, worsened in resistivity after forming gas treatment.
High Quality Zinc Oxide Nanorod Film And Ultraviolet Resistive Photodetector Prepared By Low Temperature Aqueous Solution Deposition
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Author : 翁怡嶸
language : en
Publisher:
Release Date : 2016
High Quality Zinc Oxide Nanorod Film And Ultraviolet Resistive Photodetector Prepared By Low Temperature Aqueous Solution Deposition written by 翁怡嶸 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Low Temperature Aqueous Synthesis Of Epitaxial Zno Films
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Author : Jacob Joseph Richardson
language : en
Publisher:
Release Date : 2010
Low Temperature Aqueous Synthesis Of Epitaxial Zno Films written by Jacob Joseph Richardson and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Zinc oxide's set of useful properties, which include a wide band gap, high excitonic binding energy, good optical transparency, and a large piezoelectric response, along with ZnO's ability to form a variety of nanostructures, have generated a substantial amount of interest in this material in recent years. Unlike other materials with similar properties, ZnO can be synthesized from aqueous solution using mild conditions of temperature and pressure. A large number of reports can be found in the literature related to the aqueous synthesis of ZnO structures, including work performed by the Lange Group at the University of California Santa Barbara pioneering the use of aqueous techniques to deposit epitaxial ZnO films. Building off this foundation of prior work, the goal of this dissertation was to further contribute to the development of low temperature aqueous deposition in ways that would allow more rapid progress towards commercial utilization. Towards this goal, several important developments have been achieved.
Silicon Nitride Silicon Dioxide And Emerging Dielectrics 10
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Author : R. Ekwal Sah
language : en
Publisher: The Electrochemical Society
Release Date : 2009
Silicon Nitride Silicon Dioxide And Emerging Dielectrics 10 written by R. Ekwal Sah and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Dielectric films categories.
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Electrical Electronics Abstracts
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Author :
language : en
Publisher:
Release Date : 1997
Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.
