High Uniformity 6 Ingap Gaas Heterojunction Bipolar Transistors
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High Uniformity 6 Ingap Gaas Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2000
High Uniformity 6 Ingap Gaas Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than "3% across the wafer. The dc current gain versus base sheet resistance on a high gain structure, has a non-linear dependence on base sheet resistance, typical of high performance InGaP/GaAs HBTs.
Current Trends In Heterojunction Bipolar Transistors
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Author : M F Chang
language : en
Publisher: World Scientific
Release Date : 1996-01-29
Current Trends In Heterojunction Bipolar Transistors written by M F Chang and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-01-29 with Technology & Engineering categories.
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
High Gain Ingap Gaas Heterojunction Bipolar Transistors By Low Pressure Metalorganic Chemical Vapor Deposistion
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Author : Theodore Chung
language : en
Publisher:
Release Date : 2000
High Gain Ingap Gaas Heterojunction Bipolar Transistors By Low Pressure Metalorganic Chemical Vapor Deposistion written by Theodore Chung and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Growth And Design Of High Performance Ingap Gaas Heterojunction Bipolar Transistors Grown By Low Pressure Metalorganic Chemical Vapor Deposition
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Author : Quesnell Jacob Hartmann
language : en
Publisher:
Release Date : 1998
Growth And Design Of High Performance Ingap Gaas Heterojunction Bipolar Transistors Grown By Low Pressure Metalorganic Chemical Vapor Deposition written by Quesnell Jacob Hartmann and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.
Ingap Gaas Heterojunction Bipolar Transistors And Phototransistors
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Author : Jowan Masum
language : en
Publisher:
Release Date : 1997
Ingap Gaas Heterojunction Bipolar Transistors And Phototransistors written by Jowan Masum and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.
Design Fabrication Characterization And Simulation Of High Performance Npn Ingap Gaas Heterojunction Bipolar Phototransistors And Heterojunction Bipolar Transistors
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Author : Ravi Sridhara
language : en
Publisher:
Release Date : 1997
Design Fabrication Characterization And Simulation Of High Performance Npn Ingap Gaas Heterojunction Bipolar Phototransistors And Heterojunction Bipolar Transistors written by Ravi Sridhara and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.
Fabrication And Modeling Of Ingap Gaas Heterojunction Bipolar Transistor
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Author : Sung-Jin Ho
language : en
Publisher:
Release Date : 2007
Fabrication And Modeling Of Ingap Gaas Heterojunction Bipolar Transistor written by Sung-Jin Ho and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Sige Gaas And Inp Heterojunction Bipolar Transistors
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Author : Jiann S. Yuan
language : en
Publisher: Wiley-Interscience
Release Date : 1999-04-12
Sige Gaas And Inp Heterojunction Bipolar Transistors written by Jiann S. Yuan and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-04-12 with Technology & Engineering categories.
An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Linearity Characteristics Of Ingap Gaas Heterojunction Bipolar Transistors And Power Amplifiers
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Author : Masaya Iwamoto
language : en
Publisher:
Release Date : 2003
Linearity Characteristics Of Ingap Gaas Heterojunction Bipolar Transistors And Power Amplifiers written by Masaya Iwamoto and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
State Of The Art Program On Compound Semiconductors Xxxvii Sotapocs Xxxvii And Narrow Bandgap Optoelectronic Materials And Devices
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Author : P. C. Chang
language : en
Publisher: The Electrochemical Society
Release Date : 2002
State Of The Art Program On Compound Semiconductors Xxxvii Sotapocs Xxxvii And Narrow Bandgap Optoelectronic Materials And Devices written by P. C. Chang and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Technology & Engineering categories.