Linearity Characteristics Of Ingap Gaas Heterojunction Bipolar Transistors And Power Amplifiers
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Linearity Characteristics Of Ingap Gaas Heterojunction Bipolar Transistors And Power Amplifiers
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Author : Masaya Iwamoto
language : en
Publisher:
Release Date : 2003
Linearity Characteristics Of Ingap Gaas Heterojunction Bipolar Transistors And Power Amplifiers written by Masaya Iwamoto and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
Development Of A High Performance Ingap Gaas Hbt Power Amplifier For Wcdma Applications
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Author :
language : en
Publisher:
Release Date : 2005
Development Of A High Performance Ingap Gaas Hbt Power Amplifier For Wcdma Applications written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
(Uncorrected OCR) Abstract of thesis entitled DEVELOPMENT OF A HIGH PERFORMANCE InGaP/GaAs HBT POWER AMPLIFIER FOR WCDMA APPLICATIONS Submitted by Poek Chi ki for the degree of Master of Philisophy at The University of Hong Kong in January 2005 In the latest generation of mobile communication devices, large-size and continuous-stream data are being handled. There is a high demand for speed of data transfer and for large bandwidth for transmission. Standby and operating time are also key concerns for mobile devices. In this regard, it is important to note that power amplifier circuits consume most of the power from the battery. As power amplification is the last stage in the uplink circuit, it should be designed to be linearly operated for better spectrum utilization. Various linearization techniques have been researched. These techniques can be categorized into two main groups: (1) feed-forward linearization; and (2) pre-distortion linearization. External circuitries are employed in both groups to compensate for distortion characteristics. However, they involve a trade-off with efficiency, and also increase the complexity of the circuit. The aim of this study was to design a conventional power amplifier circuit with linearity to satisfy the W-CDMA requirements and to operate with low power dissipation. InGaP/GaAs Heterojunction Bipolar Transistor (HBT) was selected as the device for the power amplifier, as it has higher linearity, transconductance, and power added efficiency (PAE) than silicon Bipolar Junction Transistor, MESFET or HEMT. It also has high power density, and can be operated with a single power supply. The crux of this study was to improve the linearity of heterojunction bipolar power amplifier circuit in third generation mobile products. The key components of the amplifier circuit are optimized to achieve the application requirements. A Compact Microstrip Resonance Cell (CMRC) circuit was implemented with the HBT amplifier. The effect of the CMRC circ.
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation
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Author : Xiang Liu
language : en
Publisher:
Release Date : 2011
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation written by Xiang Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Bipolar transistors categories.
Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications
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Author : Pin-Fan Chen
language : en
Publisher:
Release Date : 2001
Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications written by Pin-Fan Chen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Investigations Of Linearity Characteristics For Larege Emitter Area Gaas Hbt Power Stages
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Author :
language : en
Publisher:
Release Date : 2001
Investigations Of Linearity Characteristics For Larege Emitter Area Gaas Hbt Power Stages written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
In this paper the linearity properties of large-emitter-area GaAs heterojunction bipolar transistors are experimentally investigated. The approach is based on AM-AM and AM-PM conversion measurements, performed on-wafer with an active harmonic load-pull system. The measured data are then processed to evaluate the transistor linearity in terms of intermodulation distortion (IMD) and adjacent channel power ratio (ACPR). As an important result, the harmonic source impedance at the second harmonic plays a significant role in determining the maximum output power allowed for a given IMD or ACPR level.
Characteristics Of Ingap Gaas Single Heterojunction Bipolar Transistor With Zero Potential Spike By Doped Sheet
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Author :
language : en
Publisher:
Release Date : 1906
Characteristics Of Ingap Gaas Single Heterojunction Bipolar Transistor With Zero Potential Spike By Doped Sheet written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1906 with categories.
We report the fabrication and characterization of the InGaP/GaAs single hetƯerojunction bipolar transistor (SHBT). The cross sectional structure of the studied device is shown in Fig.l. The SHBT with a delta-doped sheet located at the E-B heterointerface (delta-SHBT) exhibits a common-emitter current gain as high as 410 and an extremely low offset voltage of only 55 mV. Figure 2(a) and (b) illustrate the I-V characteristics and the expanded view near the near of the same device. The higher current gain of delta-SHBT can be attributed to the increase of the hole barrier resulting from the delta-doped sheet and to the reduction of charge storage because of the existence of thin spacer (50-A). The low offset voltage is due to the elimination of the potential spike of E-B junction. The calculated conduction band-edge diaƯgrams near the E-B junction of delta-SHBT, conventional SHBT and HEBT at various biased conditions are plotted in Fig. 3. At equilibrium, no potential spike exists for all the three structures. As Vbe= + 1.0 V forward biased, a potential spike about 60 meV existed in an SHBT while no potential spike existed in both delta-SHBT and HEBT. Also notice that the width of neutral region in narrow energy-gap emitter for an HEBT is also increased with biased voltage. It is evident that the potential spike do be eliminated by utilizing delta-doped sheet. On the other hand, calculated increase of the E-B capacitance for our delta-SHBT is very small due to the thin enough delta-doped sheet.
Compound Semiconductor Power Transistors And
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Author : Electrochemical Society. Meeting
language : en
Publisher: The Electrochemical Society
Release Date : 1998
Compound Semiconductor Power Transistors And written by Electrochemical Society. Meeting and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Technology & Engineering categories.
Ieice Transactions On Electronics
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Author :
language : en
Publisher:
Release Date : 2005
Ieice Transactions On Electronics written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Electronics categories.
High Uniformity 6 Ingap Gaas Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2000
High Uniformity 6 Ingap Gaas Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than "3% across the wafer. The dc current gain versus base sheet resistance on a high gain structure, has a non-linear dependence on base sheet resistance, typical of high performance InGaP/GaAs HBTs.
Sige Gaas And Inp Heterojunction Bipolar Transistors
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Author : Jiann S. Yuan
language : en
Publisher: Wiley-Interscience
Release Date : 1999-04-12
Sige Gaas And Inp Heterojunction Bipolar Transistors written by Jiann S. Yuan and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-04-12 with Technology & Engineering categories.
An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.