Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications
DOWNLOAD
Download Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications
DOWNLOAD
Author : Pin-Fan Chen
language : en
Publisher:
Release Date : 2001
Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications written by Pin-Fan Chen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation
DOWNLOAD
Author : Xiang Liu
language : en
Publisher:
Release Date : 2011
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation written by Xiang Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Bipolar transistors categories.
Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
High Speed High Power Gainp Gaas Hbts And Their Application To Microwave Monolithic Integrated Circuits Mmics
DOWNLOAD
Author : Jae Woo Park
language : en
Publisher:
Release Date : 2000
High Speed High Power Gainp Gaas Hbts And Their Application To Microwave Monolithic Integrated Circuits Mmics written by Jae Woo Park and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Development Of A High Performance Ingap Gaas Hbt Power Amplifier For Wcdma Applications
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 2005
Development Of A High Performance Ingap Gaas Hbt Power Amplifier For Wcdma Applications written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
(Uncorrected OCR) Abstract of thesis entitled DEVELOPMENT OF A HIGH PERFORMANCE InGaP/GaAs HBT POWER AMPLIFIER FOR WCDMA APPLICATIONS Submitted by Poek Chi ki for the degree of Master of Philisophy at The University of Hong Kong in January 2005 In the latest generation of mobile communication devices, large-size and continuous-stream data are being handled. There is a high demand for speed of data transfer and for large bandwidth for transmission. Standby and operating time are also key concerns for mobile devices. In this regard, it is important to note that power amplifier circuits consume most of the power from the battery. As power amplification is the last stage in the uplink circuit, it should be designed to be linearly operated for better spectrum utilization. Various linearization techniques have been researched. These techniques can be categorized into two main groups: (1) feed-forward linearization; and (2) pre-distortion linearization. External circuitries are employed in both groups to compensate for distortion characteristics. However, they involve a trade-off with efficiency, and also increase the complexity of the circuit. The aim of this study was to design a conventional power amplifier circuit with linearity to satisfy the W-CDMA requirements and to operate with low power dissipation. InGaP/GaAs Heterojunction Bipolar Transistor (HBT) was selected as the device for the power amplifier, as it has higher linearity, transconductance, and power added efficiency (PAE) than silicon Bipolar Junction Transistor, MESFET or HEMT. It also has high power density, and can be operated with a single power supply. The crux of this study was to improve the linearity of heterojunction bipolar power amplifier circuit in third generation mobile products. The key components of the amplifier circuit are optimized to achieve the application requirements. A Compact Microstrip Resonance Cell (CMRC) circuit was implemented with the HBT amplifier. The effect of the CMRC circ.
Development Of Sige Based Power Heterojunction Bipolar Transistors And Their Application To Microwave Power Amplification
DOWNLOAD
Author : Zhenqiang Ma
language : en
Publisher:
Release Date : 2001
Development Of Sige Based Power Heterojunction Bipolar Transistors And Their Application To Microwave Power Amplification written by Zhenqiang Ma and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Gaas Based Epitaxial Structures For Heterojunction Bipolar Transistors With Increased Efficiency
DOWNLOAD
Author : Rebecca Jane Welty
language : en
Publisher:
Release Date : 2002
Gaas Based Epitaxial Structures For Heterojunction Bipolar Transistors With Increased Efficiency written by Rebecca Jane Welty and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
Circuits At The Nanoscale
DOWNLOAD
Author : Krzysztof Iniewski
language : en
Publisher: CRC Press
Release Date : 2018-10-08
Circuits At The Nanoscale written by Krzysztof Iniewski and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-08 with Technology & Engineering categories.
Circuits for Emerging Technologies Beyond CMOS New exciting opportunities are abounding in the field of body area networks, wireless communications, data networking, and optical imaging. In response to these developments, top-notch international experts in industry and academia present Circuits at the Nanoscale: Communications, Imaging, and Sensing. This volume, unique in both its scope and its focus, addresses the state-of-the-art in integrated circuit design in the context of emerging systems. A must for anyone serious about circuit design for future technologies, this book discusses emerging materials that can take system performance beyond standard CMOS. These include Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP). Three-dimensional CMOS integration and co-integration with Microelectromechanical (MEMS) technology and radiation sensors are described as well. Topics in the book are divided into comprehensive sections on emerging design techniques, mixed-signal CMOS circuits, circuits for communications, and circuits for imaging and sensing. Dr. Krzysztof Iniewski is a director at CMOS Emerging Technologies, Inc., a consulting company in Vancouver, British Columbia. His current research interests are in VLSI ciruits for medical applications. He has published over 100 research papers in international journals and conferences, and he holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. In this volume, he has assembled the contributions of over 60 world-reknown experts who are at the top of their field in the world of circuit design, advancing the bank of knowledge for all who work in this exciting and burgeoning area.
Design Simulation And Modeling Of Collector Up Galnp Gaas Heterojunction Bipolar Transistors
DOWNLOAD
Author : Mohan K. Chirala
language : en
Publisher:
Release Date : 2002
Design Simulation And Modeling Of Collector Up Galnp Gaas Heterojunction Bipolar Transistors written by Mohan K. Chirala and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
The immense demand for communication systems world wide has created an enormous market for semiconductors devices in variegated applications. While scaled CMOS is consolidating its stronghold in the analog and RF domains, the wide gamut of microwave frequencies is being competed for by the various types of III-V heterojunction based semiconductor devices, which were made amenable to high-volume production, thanks to rapid improvements in bulk-processing and fabrication techniques in the last decade. Among these devices, the quest for faster, more powerful and low cost transistors has led researchers to investigate innovative topologies. The availability of powerful CAD tools that incorporate the most intricate physical phenomenon in the modeling process has provided a much needed impetus to this ongoing research. Of the scores of disparate devices that have been investigated, Heterojunction Bipolar Transistors (HBTs) have carved a niche for themselves owing to their high speeds and greater power handling capabilities. In this work, the design of an innovative HBT with a collector-up topology, i.e., with the collector situated on top of the device and emitter on the substrate side, is carried out and optimized for maximizing the high frequency performance. The material system used here is Ga x In 1-x P/GaAs (with x=0.51 indicating lattice matched composition), which has relatively superior material properties and etching characteristics than the conventional Al x Ga 1 -xAs/GaAs material system. The material properties of the ternary were investigated and the most suitable values were ascertained through meticulous research. These parameters, along with the mobility models (that were derived by investigating published results), were made compatible to an emitter-up HBT and incorporated into a two dimensional, physically-based, numerical simulator called ATLAS by Silvaco Inc. The motive was to verify the correctness of the material parameters and models derived. The simulation results compared favorably with the published results. With these verified material parameters and mobility models, a collector-up GaInP/GaAs HBT structure with unetched extrinsic emitter was simulated. After a performance appraisal with the emitter-up structure, the impact of having an undercut in the extrinsic base region was investigated. It was found that this undercut drastically improved the high frequency performance as well as DC characteristics of the collector-up structure. This was documented by a significant increase in cutoff frequency (f T) from 109 GHz to 140 GHz. It was even more pronounced in maximum frequency of oscillation (f max), which is more practically useful than cutoff frequency, from 76 GHz to 233 GHz. These simulation results are much better than the practically experimented values. The high frequency parametric values described here were achieved after scrupulously optimizing the collector-up HBT structure.
1996 High Performance Electron Devices For Microwave And Optoelectronic Applications Workshop Edmo
DOWNLOAD
Author : IEEE Electron Devices Society
language : en
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
Release Date : 1996
1996 High Performance Electron Devices For Microwave And Optoelectronic Applications Workshop Edmo written by IEEE Electron Devices Society and has been published by Institute of Electrical & Electronics Engineers(IEEE) this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Education categories.
Progress in high performance microwave and optoelectronic devices is reported. Power, frequency, and efficiencies of applications are described. Characteristics and boundary limitations of applications in industry, research and government are explored.
American Doctoral Dissertations
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 2000
American Doctoral Dissertations written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Dissertation abstracts categories.