Infrared Ellipsometry On Semiconductor Layer Structures
DOWNLOAD
Download Infrared Ellipsometry On Semiconductor Layer Structures PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Infrared Ellipsometry On Semiconductor Layer Structures book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Infrared Ellipsometry On Semiconductor Layer Structures
DOWNLOAD
Author : Mathias Schubert
language : en
Publisher: Springer Science & Business Media
Release Date : 2004-11-26
Infrared Ellipsometry On Semiconductor Layer Structures written by Mathias Schubert and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-11-26 with Science categories.
The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.
Optical Characterization Of Epitaxial Semiconductor Layers
DOWNLOAD
Author : Günther Bauer
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Optical Characterization Of Epitaxial Semiconductor Layers written by Günther Bauer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade. In particular, the dramatic improvement of the structural quality of semiconductor epilayers and heterostructures results to a great deal from the level of sophistication achieved with such analysis techniques. First of all, optical techniques are nondestructive and their sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses on the atomic scale. Furthermore, the spatial and temporal resolution have been pushed to such limits that real time observation of surface processes during epitaxial growth is possible with techniques like reflectance difference spectroscopy. Of course, optical spectroscopies complement techniques based on the inter action of electrons with matter, but whereas the latter usually require high or ultrahigh vacuum conditions, the former ones can be applied in different environments as well. This advantage could turn out extremely important for a rather technological point of view, i.e. for the surveillance of modern semiconductor processes. Despite the large potential of techniques based on the interaction of electromagnetic waves with surfaces and epilayers, optical techniques are apparently moving only slowly into this area of technology. One reason for this might be that some prejudices still exist regarding their sensitivity.
Handbook Of Modern Coating Technologies
DOWNLOAD
Author : Mahmood Aliofkhazraei
language : en
Publisher: Elsevier
Release Date : 2021-03-06
Handbook Of Modern Coating Technologies written by Mahmood Aliofkhazraei and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-06 with Science categories.
Handbook of Modern Coating Technologies: Advanced Characterization Methods reviews advanced characterization methods of modern coating technologies. The topics in this volume consist of scanning vibrating electrode technique, spectroscopic ellipsometry, advances in X-ray diffraction, neutron reflectivity, micro- and nanoprobes, fluorescence technique, stress measurement methods in thin films, micropotentiometry, and localized corrosion studies.
Handbook Of Zinc Oxide And Related Materials
DOWNLOAD
Author : Zhe Chuan Feng
language : en
Publisher: Taylor & Francis
Release Date : 2012-09-26
Handbook Of Zinc Oxide And Related Materials written by Zhe Chuan Feng and has been published by Taylor & Francis this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-26 with Science categories.
Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a
The Physics Of Semiconductors
DOWNLOAD
Author : Marius Grundmann
language : en
Publisher: Springer Nature
Release Date : 2021-03-06
The Physics Of Semiconductors written by Marius Grundmann and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-06 with Technology & Engineering categories.
The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
Spectroscopic Ellipsometry For Photovoltaics
DOWNLOAD
Author : Hiroyuki Fujiwara
language : en
Publisher: Springer
Release Date : 2019-01-10
Spectroscopic Ellipsometry For Photovoltaics written by Hiroyuki Fujiwara and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-10 with Science categories.
This book provides a basic understanding of spectroscopic ellipsometry, with a focus on characterization methods of a broad range of solar cell materials/devices, from traditional solar cell materials (Si, CuInGaSe2, and CdTe) to more advanced emerging materials (Cu2ZnSnSe4, organics, and hybrid perovskites), fulfilling a critical need in the photovoltaic community. The book describes optical constants of a variety of semiconductor light absorbers, transparent conductive oxides and metals that are vital for the interpretation of solar cell characteristics and device simulations. It is divided into four parts: fundamental principles of ellipsometry; characterization of solar cell materials/structures; ellipsometry applications including optical simulations of solar cell devices and online monitoring of film processing; and the optical constants of solar cell component layers.
Spectroscopic Ellipsometry
DOWNLOAD
Author : Hiroyuki Fujiwara
language : en
Publisher: John Wiley & Sons
Release Date : 2007-09-27
Spectroscopic Ellipsometry written by Hiroyuki Fujiwara and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-09-27 with Technology & Engineering categories.
Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry (SE). Beginning with an overview of SE technologies the text moves on to focus on the data analysis of results obtained from SE, Fundamental data analyses, principles and physical backgrounds and the various materials used in different fields from LSI industry to biotechnology are described. The final chapter describes the latest developments of real-time monitoring and process control which have attracted significant attention in various scientific and industrial fields.
Optical Techniques For Solid State Materials Characterization
DOWNLOAD
Author : Rohit P. Prasankumar
language : en
Publisher: CRC Press
Release Date : 2016-04-19
Optical Techniques For Solid State Materials Characterization written by Rohit P. Prasankumar and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-19 with Science categories.
Over the last century, numerous optical techniques have been developed to characterize materials, giving insight into their optical, electronic, magnetic, and structural properties and elucidating such diverse phenomena as high-temperature superconductivity and protein folding. Optical Techniques for Solid-State Materials Characterization provides
Handbook Of Optical Metrology
DOWNLOAD
Author : Toru Yoshizawa
language : en
Publisher: CRC Press
Release Date : 2017-07-28
Handbook Of Optical Metrology written by Toru Yoshizawa and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-28 with Technology & Engineering categories.
Handbook of Optical Metrology: Principles and Applications begins by discussing key principles and techniques before exploring practical applications of optical metrology. Designed to provide beginners with an introduction to optical metrology without sacrificing academic rigor, this comprehensive text: Covers fundamentals of light sources, lenses, prisms, and mirrors, as well as optoelectronic sensors, optical devices, and optomechanical elements Addresses interferometry, holography, and speckle methods and applications Explains Moiré metrology and the optical heterodyne measurement method Delves into the specifics of diffraction, scattering, polarization, and near-field optics Considers applications for measuring length and size, displacement, straightness and parallelism, flatness, and three-dimensional shapes This new Second Edition is fully revised to reflect the latest developments. It also includes four new chapters—nearly 100 pages—on optical coherence tomography for industrial applications, interference microscopy for surface structure analysis, noncontact dimensional and profile metrology by video measurement, and optical metrology in manufacturing technology.
Study Of Novel Electronic Materials By Mid Infrared And Terahertz Optical Hall Effect
DOWNLOAD
Author : Nerijus Armakavicius
language : en
Publisher: Linköping University Electronic Press
Release Date : 2017-10-23
Study Of Novel Electronic Materials By Mid Infrared And Terahertz Optical Hall Effect written by Nerijus Armakavicius and has been published by Linköping University Electronic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-23 with categories.
Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. In particular, for the growing field of high frequency and high power electronics, Si cannot offer the required properties. Development of materials capable of providing high current densities, carrier mobilities and high breakdown fields is crucial for a progress in state of the art electronics. Epitaxial graphene grown on semi-insulating silicon carbide substrates has a high potential to be integrated in the current planar device technologies. High electron mobilities and sheet carrier densities make graphene extremely attractive for high frequency analog applications. One of the remaining challenges is the interaction of epitaxial graphene with the substrate. Typically, much lower free charge carrier mobilities, compared to free standing graphene, and doping, due to charge transfer from the substrate, is reported. Thus, a good understanding of the intrinsic free charge carriers properties and the factors affecting them is very important for further development of epitaxial graphene. III-group nitrides have been extensively studied and already have proven their high efficiency as light sources for short wavelengths. High carrier mobilities and breakdown electric fields were demonstrated for III-group nitrides, making them attractive for high frequency and high power applications. Currently, In-rich InGaN alloys and AlGaN/GaN high electron mobility structures are of high interest for the research community due to open fundamental questions. Electrical characterization techniques, commonly used for the determination of free charge carrier properties, require good ohmic and Schottky contacts, which in certain cases can be difficult to achieve. Access to electrical properties of buried conductive channels in multilayered structures requires modification of samples and good knowledge of the electrical properties of all electrical contact within the structure. Moreover, the use of electrical contacts to electrically characterize two-dimensional electronic materials, such as graphene, can alter their intrinsic properties. Furthermore, the determination of effective mass parameters commonly employs cyclotron resonance and Shubnikov-de Haas oscillations measurements, which require long scattering times of free charge carriers, high magnetic fields and low temperatures. The optical Hall effect is an external magnetic field induced optical anisotropy in conductive layers due to the motion of the free charge carriers under the influence of the Lorentz force, and is equivalent to the electrical Hall effect at optical frequencies. The optical Hall effect can be measured by generalized ellipsometry and provides a powerful method for the determination of free charge carrier properties in a non-destructive and contactless manner. In principle, a single optical Hall effect measurement can provide quantitative information about free charge carrier types, concentrations, mobilities and effective mass parameters at temperatures ranging from few kelvins to room temperature and above. Further, it was demonstrated that for transparent samples, a backside cavity can be employed to enhance the optical Hall effect. Measurement of the optical Hall effect by generalized ellipsometry is an indirect technique requiring subsequent data analysis. Parameterized optical models are fitted to match experimentally measured ellipsometric data by varying physically significant parameters. Analysis of the optical response of samples, containing free charge carriers, employing optical models based on the classical Drude model, which is augmented with an external magnetic field contribution, provide access to the free charge carrier properties. The main research results of the graduate studies presented in this licentiate thesis are summarized in the five scientific papers. Paper I. Description of the custom-built terahertz frequency-domain spectroscopic ellipsometer at Linköping University. The terahertz ellipsometer capabilities are demonstrated by an accurate determination of the isotropic and anisotropic refractive indices of silicon and m-plane sapphire, respectively. Further, terahertz optical Hall effect measurements of an AlGaN/GaN high electron mobility structures were employed to extract the two-dimensional electron gas sheet density, mobility and effective mass parameters. Last, in-situ optical Hall effect measurement on epitaxial graphene in a gas cell with controllable environment, were used to study the effects of environmental doping on the mobility and carrier concentration. Paper II. Presents terahertz cavity-enhanced optical Hall measurements of the monolayer and multilayer epitaxial graphene on semi-insulating 4H-SiC (0001) substrates. The data analysis revealed p-type doping for monolayer graphene with a carrier density in the low 1012 cm?2 range and a carrier mobility of 1550 cm2/V·s. For the multilayer epitaxial graphene, n-type doping with a carrier density in the low 1013 cm?2 range, a mobility of 470 cm2/V·s and an effective mass of (0.14 ± 0.03) m0 were extracted. The measurements demonstrate that cavity-enhanced optical Hall effect measurements can be applied to study electronic properties of two-dimensional materials. Paper III. Terahertz cavity-enhanced optical Hall effect measurements are employed to study anisotropic transport in as-grown monolayer, quasi free-standing monolayer and quasi free-standing bilayer epitaxial graphene on semi-insulating 4H-SiC (0001) substrates. The data analysis revealed a strong anisotropy in the carrier mobilities of the quasi freestanding bilayer graphene. The anisotropy is demonstrated to be induced by carriers scattering at the step edges of the SiC, by showing that the mobility is higher along the step than across them. The scattering mechanism is discussed based on the results of the optical Hall effect, low-energy electron microscopy, low-energy electron diffraction and Raman measurements. Paper IV. Mid-infrared spectroscopic ellipsometry and mid-infrared optical Hall effect measurements are employed to determine the electron effective mass in an In0.33Ga0.67N epitaxial layer. The data analysis reveals slightly anisotropic effective mass and carrier mobility parameters together with the optical phonon frequencies and broadenings. Paper V. Terahertz cavity-enhanced optical Hall measurements are employed to study the free charge carrier properties in a set of AlGaN/GaN high electron mobility structures with modified interfaces. The results show that the interface structure has a significant effect on the free charge carrier mobility and that the sample with a sharp interface between an AlGaN barrier and a GaN buffer layers exhibits a record mobility of 2332±73 cm2/V·s. The determined effective mass parameters showed an increase compared to the GaN value, that is attributed the the penetration of the electron wavefunction into the AlGaN barrier layer.