Intersubband Transitions In Quantum Wells Physics And Devices

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Intersubband Transitions In Quantum Wells Physics And Devices

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Author : Sheng S. Li
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27

Intersubband Transitions In Quantum Wells Physics And Devices written by Sheng S. Li and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Science categories.

The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii

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Author :
language : en
Publisher: Academic Press
Release Date : 1999-10-25

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-10-25 with Science categories.

Intersubband Transitions in Quantum Wells: Physics and Device Applications II

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii

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Author :
language : en
Publisher: Academic Press
Release Date : 1999-10-27

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-10-27 with Science categories.

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii

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Author :
language : en
Publisher: Academic Press
Release Date : 1999-10-13

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-10-13 with Science categories.

Intersubband Transitions In Quantum Wells Physics And Device Applications

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Author :
language : en
Publisher: Academic Press
Release Date : 1999-10-28

Intersubband Transitions In Quantum Wells Physics And Device Applications written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-10-28 with Science categories.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Quantum Well Intersubband Transition Physics And Devices

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Author : Hui C. Liu
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Quantum Well Intersubband Transition Physics And Devices written by Hui C. Liu and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii

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Author :
language : en
Publisher: Academic Press
Release Date : 1999-10-27

Intersubband Transitions In Quantum Wells Physics And Device Applications Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-10-27 with Science categories.

Intersubband Transitions in Quantum Wells: Physics and Device Applications II.

Theory Of Semiconductor Quantum Devices

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Author : Fausto Rossi
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-01-13

Theory Of Semiconductor Quantum Devices written by Fausto Rossi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-13 with Technology & Engineering categories.

Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectronic nanodevices, including quantum-cascade laser sources and detectors, few-electron/exciton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.

Handbook Of Gan Semiconductor Materials And Devices

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Author : Wengang (Wayne) Bi
language : en
Publisher: CRC Press
Release Date : 2017-10-20

Handbook Of Gan Semiconductor Materials And Devices written by Wengang (Wayne) Bi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-20 with Science categories.

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Iii Nitride Semiconductors And Their Modern Devices

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Author : Bernard Gil
language : en
Publisher: OUP Oxford
Release Date : 2013-08-22

Iii Nitride Semiconductors And Their Modern Devices written by Bernard Gil and has been published by OUP Oxford this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-08-22 with Science categories.

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.