Investigating The Electrothermal Characteristics Of A Gate Turn Off Thyristor During Turn Off Using Silvaco Altas Sic Atlas
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Investigating The Electrothermal Characteristics Of A Gate Turn Off Thyristor During Turn Off Using Silvaco Altas Sic Atlas
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Author :
language : en
Publisher:
Release Date : 2009
Investigating The Electrothermal Characteristics Of A Gate Turn Off Thyristor During Turn Off Using Silvaco Altas Sic Atlas written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Thyristors categories.
This thesis presents data from a simulation study of the thermal and electrical characteristics of a Gate Turn Off (GTO) thyristor. At present, most of the research on GTO thyristors has focused on their use in power electronic systems at high switching frequencies. As a result, the behavior of GTO thyristors at very low switching frequencies is not well understood. Previous research projects have shown experimentally that GTO thyristors are capable of interrupting significantly more than their nominal turn-off current rating when used in pulsed power applications at low switching frequencies. This work demonstrates the use of physics-based computer simulation to study the electrothermal turn-off characteristics of a GTO thyristor at low switching frequencies. The computer model used in this project simulated both the electrical and the thermal characteristics of a GTO thyristor and allowed its internal properties - such as current density, electric fields, and lattice temperature - to be investigated. The model was used to track the generation, transfer, and dissipation of energy within the structure of the device and show that the current interruption capability of a GTO thyristor may depend on its switching frequency due to the thermal energy that is generated and stored in the device during turn-off.
Investigation Of The Current Turn Off Characteristics Of A Gto Thyristor In An Inductive Pulse Forming Network
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Author : Gerald Edward Vineyard
language : en
Publisher:
Release Date : 2008
Investigation Of The Current Turn Off Characteristics Of A Gto Thyristor In An Inductive Pulse Forming Network written by Gerald Edward Vineyard and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Pulsed power systems categories.
The research project involved an investigation of the current interruption capability of Gate Turn Off (GTO) thyristors. Specifically, the project examined factors that had the potential to increase the amount of current that could safely be turned off by a GTO thyristor. During the course of the project, a series of GTO thyristors were used in an inductive pulse forming circuit to interrupt varying amounts of current. The primary objective of the research was to determine how the control current used to turn off the GTO thyristors affected their current interruption capability. The initial part of the research project involved designing and building the experimental apparatus required to test the inductive turn-off characteristics of the GTO thyristors. Fundamentally, the test circuit consisted of a high-voltage capacitor bank, a wire-wound inductor, the GTO thyristor with its associated control circuitry, and instrumentation to measure the voltages and currents in the circuit. The capacitor bank supplied the energy for each current pulse while the inductor, hand wound using a polyvinylchloride (PVC) core and a length of magnet wire, controlled the shape and duration of the current pulses; the control circuitry determined the timing of the current pulses used to turn the GTO thyristor on and off. The test circuit utilized a conventional H-bridge driver to control the turn on and turn off of the GTO thyristor. Each leg of the H-bridge was connected to a dedicated capacitor bank that supplied the energy for the turn-on and turn-off gate current pulses. The H-bridge allowed the shape and magnitude of the turn-off gate current pulse to be easily adjusted. The amount of gate turn-off current was adjusted throughout the experiment to determine if the current interruption capacity of the GTO thyristors could be increased beyond their turn-off current rating. The project demonstrated that the GTO thyristors were capable of reliably interrupting twice their nominal turn-off current rating. Furthermore, the project showed that the turn-off speed of the GTO thyristors is dependent upon the amount of gate current used to turn off the GTO thyristors. The GTO thyristors that were turned off using larger gate currents were able to interrupt higher levels of current and turn off faster than the GTO thyristors that were turned off using smaller gate currents. This research project directly complements current and future Department of Defense (DOD) work being performed on railgun pulse power systems. Inductive power supplies may provide a solution to the energy density requirements of the next generation of electric weapon systems. The experimental results of this investigation demonstrate that GTO thyristors can be used in inductive pulse power supplies to safely interrupt significantly more current than they are nominally rated to turn off.
Design And Fabrication Of 4h Silicon Carbide Gate Turn Off Thyristors
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Author : Lei Lin
language : en
Publisher:
Release Date : 2013
Design And Fabrication Of 4h Silicon Carbide Gate Turn Off Thyristors written by Lei Lin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with Electronics categories.
Gate Turn Off Thyristors Their Properties And Applications
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Author : W. Bösterling
language : en
Publisher:
Release Date : 1983
Gate Turn Off Thyristors Their Properties And Applications written by W. Bösterling and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1983 with categories.
Fast Turn Off Times Observed In Experimental 4h Sic Thyristors
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Author : National Aeronautics and Space Administration (NASA)
language : en
Publisher: Createspace Independent Publishing Platform
Release Date : 2018-06-24
Fast Turn Off Times Observed In Experimental 4h Sic Thyristors written by National Aeronautics and Space Administration (NASA) and has been published by Createspace Independent Publishing Platform this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-06-24 with categories.
Room temperature measurements of the turn-off time (t(sub q)) are reported for several packaged, npnp developmental power thyristors based on 4H-type SiC and rated 400 V, 2 A. Turn-off is effected by a 50 V pulse of applied reverse voltage, from a state of a steady 1 A forward current. Plots of t(sub q) against the ramp rate (dV(sub AK)/dt) of reapplied forward voltage are presented for preset values of limiting anode-to-cathode voltage (V(sub AK,max)). The lowest t(sub q) measured was about 180 ns. A rapid rise of these t(sub q) curves was observed for values of V(sub AK,max) that are only about a fifth of the rated voltage, whereas comparative t(sub q) plots for a commercial, fast turn-off, Si-based thyristor at a proportionately reduced V(sub AK,max) showed no such behavior. Hence these SiC thyristors may have problems arising from material defects or surface passivation. The influence the R-C-D gate bypass circuit that was used is briefly discussed. Niedra, Janis M. Glenn Research Center NASA/CR-2006-214259, E-15542
High Voltage And Current Gate Assisted Turn Off Thyristor Development
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Author :
language : en
Publisher:
Release Date : 1972
High Voltage And Current Gate Assisted Turn Off Thyristor Development written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1972 with categories.
4h Sic Gate Turn Off Thyristor And Merged P I N And Schottky Barrier Diode
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Author : Lihui Cao
language : en
Publisher:
Release Date : 2000
4h Sic Gate Turn Off Thyristor And Merged P I N And Schottky Barrier Diode written by Lihui Cao and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Fundamentals And Applications Of Gate Turn Off Thyristors
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Author : Peter Wood
language : en
Publisher:
Release Date : 1988
Fundamentals And Applications Of Gate Turn Off Thyristors written by Peter Wood and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Electric switchgear categories.
Modelling Of Gate Turn Off Thyristors For Use In Circuit Simulations
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Author : King Jet Tseng
language : en
Publisher:
Release Date : 1993
Modelling Of Gate Turn Off Thyristors For Use In Circuit Simulations written by King Jet Tseng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.
Modelling And Switching Simulation Of Gate Turn Off Thyristor Using Finite Element Method
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Author : Norainon Mohamed
language : en
Publisher:
Release Date : 2010
Modelling And Switching Simulation Of Gate Turn Off Thyristor Using Finite Element Method written by Norainon Mohamed and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Finite element method categories.