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Ion Implantation Into Metals


Ion Implantation Into Metals
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Ion Implantation Into Metals


Ion Implantation Into Metals
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Author : V. Ashworth
language : en
Publisher: Elsevier
Release Date : 2016-04-20

Ion Implantation Into Metals written by V. Ashworth and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-20 with Technology & Engineering categories.


Ion Implantation into Metals presents the proceedings of the 3rd International Conference on the Modification of Surface Properties of Metals by Ion Implantation, held at UMIST, Manchester, UK on June 23-26, 1981. The book includes papers on aqueous corrosion of ion-implanted iron; the mechanical properties and high temperature oxidation behavior in aqueous corrosion; and the potential of ion beam processing in this field of materials science and engineering. The text also presents papers on the important scientific progress in metal physics and related subjects.



Ion Implantation In Semiconductors


Ion Implantation In Semiconductors
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Author : Susumu Namba
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Ion Implantation In Semiconductors written by Susumu Namba and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.


The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.



Implantation Into Metals


Implantation Into Metals
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Author :
language : en
Publisher:
Release Date : 1974

Implantation Into Metals written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with categories.


Ion implantation in metals can be used in two ways: first, for the modification of composition in the near-surface region of a solid, where it is uniquely capable of producing states not achievable by equilibrium means; and second, for the controlled introduction of damage. Qualitative differences from the more well-developed area of implantation in semiconductors include the greater degree of annealing of defects in metals and the much higher fluence levels which are of interest. Basic research on the implantation process in metals generally is concerned with one or more of three phenomena: the lattice location occupied by implanted ions when the temperature is low enough to prevent agglomeration; characterization of precipitation processes at higher temperatures; and effects produced by implantation damage. Experiments directed toward applications show great potential for fabrication of superconductors, modification of the corrosion and mechanical properties of surfaces, studies of metallic diffusion and alloying, and simulation of reactor radiation effects.



Ion Implantation Science And Technology


Ion Implantation Science And Technology
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Author : J.F. Ziegler
language : en
Publisher: Elsevier
Release Date : 2012-12-02

Ion Implantation Science And Technology written by J.F. Ziegler and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Science categories.


Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.



Ion Implantation In Semiconductors And Other Materials


Ion Implantation In Semiconductors And Other Materials
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Author : Billy Crowder
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-13

Ion Implantation In Semiconductors And Other Materials written by Billy Crowder and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-13 with Science categories.


During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.



Ion Implantation Basics To Device Fabrication


Ion Implantation Basics To Device Fabrication
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Author : Emanuele Rimini
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27

Ion Implantation Basics To Device Fabrication written by Emanuele Rimini and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.


Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.



Ion Implantation In Metals


Ion Implantation In Metals
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Author : G. Dearnaley
language : en
Publisher:
Release Date : 1974

Ion Implantation In Metals written by G. Dearnaley and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with categories.




Ion Implantation In Metals


Ion Implantation In Metals
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Author : F. L. Vook
language : en
Publisher:
Release Date : 1977

Ion Implantation In Metals written by F. L. Vook and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1977 with categories.




Ion Implantation


Ion Implantation
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Author : Geoffrey Dearnaley
language : en
Publisher: North-Holland
Release Date : 1973

Ion Implantation written by Geoffrey Dearnaley and has been published by North-Holland this book supported file pdf, txt, epub, kindle and other format this book has been release on 1973 with Science categories.




Ion Implantation For Materials Processing


Ion Implantation For Materials Processing
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Author : F. A. Smidt
language : en
Publisher: William Andrew
Release Date : 1983

Ion Implantation For Materials Processing written by F. A. Smidt and has been published by William Andrew this book supported file pdf, txt, epub, kindle and other format this book has been release on 1983 with Science categories.


Good,No Highlights,No Markup,all pages are intact, Slight Shelfwear,may have the corners slightly dented, may have slight color changes/slightly damaged spine.