Junction To Case Thermal Resistance Of A Silicon Carbide Bipolar Junction Transistor Measured
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Junction To Case Thermal Resistance Of A Silicon Carbide Bipolar Junction Transistor Measured
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Author : National Aeronautics and Space Administration (NASA)
language : en
Publisher: Createspace Independent Publishing Platform
Release Date : 2018-06-24
Junction To Case Thermal Resistance Of A Silicon Carbide Bipolar Junction Transistor Measured written by National Aeronautics and Space Administration (NASA) and has been published by Createspace Independent Publishing Platform this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-06-24 with categories.
Junction temperature of a prototype SiC-based bipolar junction transistor (BJT) was estimated by using the base-emitter voltage (V(sub BE)) characteristic for thermometry. The V(sub BE) was measured as a function of the base current (I(sub B)) at selected temperatures (T), all at a fixed collector current (I(sub C)) and under very low duty cycle pulse conditions. Under such conditions, the average temperature of the chip was taken to be the same as that of the temperature-controlled case. At increased duty cycle such as to substantially heat the chip, but same I(sub C) pulse height, the chip temperature was identified by matching the V(sub BE) to the thermometry curves. From the measured average power, the chip-to-case thermal resistance could be estimated, giving a reasonable value. A tentative explanation for an observed bunching with increasing temperature of the calibration curves may relate to an increasing dopant atom ionization. A first-cut analysis, however, does not support this. Niedra, Janis M. Glenn Research Center NASA/CR-2006-214258, E-15541
Junction To Case Thermal Resistance Of A Silicon Carbide Bipolar Junction Transistor Measured
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Author : Janis M. Niedra
language : en
Publisher:
Release Date : 2006
Junction To Case Thermal Resistance Of A Silicon Carbide Bipolar Junction Transistor Measured written by Janis M. Niedra and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.
Thermal Resistance Measurements On Power Transistors
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Author : Sherwin Rubin
language : en
Publisher:
Release Date : 1979
Thermal Resistance Measurements On Power Transistors written by Sherwin Rubin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1979 with Power transistors categories.
High Power Bipolar Junction Transistors In Silicon Carbide
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Author : Hyung-Seok Lee
language : en
Publisher:
Release Date : 2005
High Power Bipolar Junction Transistors In Silicon Carbide written by Hyung-Seok Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Analysis And Optimization Of 1200v Silicon Carbide Bipolar Junction Transistor
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Author : Yan Gao
language : en
Publisher:
Release Date : 2007
Analysis And Optimization Of 1200v Silicon Carbide Bipolar Junction Transistor written by Yan Gao and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Keywords: degradation, current gain, sic, bipolar junction transistor.
Design And Simulation Of 4h Silicon Carbide Power Bipolar Junction Transistors
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Author : Xinyue Niu
language : en
Publisher:
Release Date : 2010
Design And Simulation Of 4h Silicon Carbide Power Bipolar Junction Transistors written by Xinyue Niu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Bipolar transistors categories.
Silicon Carbide Power Bipolar Junction Transistors
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Author : Yanbin Luo
language : en
Publisher:
Release Date : 2004
Silicon Carbide Power Bipolar Junction Transistors written by Yanbin Luo and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Fabrication And Characterization Of Silicon Carbide Power Bipolar Junction Transistors
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Author : Hyung-Seok Lee
language : en
Publisher:
Release Date : 2008
Fabrication And Characterization Of Silicon Carbide Power Bipolar Junction Transistors written by Hyung-Seok Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Analysis And Optimization Of 1200v Silicon Carbide Bipolar Junction Transistor
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Author :
language : en
Publisher:
Release Date : 2004
Analysis And Optimization Of 1200v Silicon Carbide Bipolar Junction Transistor written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Fabrication And Modeling Of Silicon Carbide Bipolar Junction Transistors
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Author : Bruce Robert Geil
language : en
Publisher:
Release Date : 2008
Fabrication And Modeling Of Silicon Carbide Bipolar Junction Transistors written by Bruce Robert Geil and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.