Key Challenges In Euv Mask Technology
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Key Challenges In Euv Mask Technology
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Author : Yow-Gwo Wang
language : en
Publisher:
Release Date : 2005
Key Challenges In Euv Mask Technology written by Yow-Gwo Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography mask technology: mask inspection and mask 3D effects on imaging performance. Actinic (at- wavelength) mask inspection (both blank and patterned mask) is of critical concern for EUV lithography. In this dissertation, systematic studies exploring the optimal optical system design to improve the defect detection sensitivity for both actinic mask blank and patterned mask inspection tools using EUV light are presented. For EUV mask blank in- spection, a complete discussion is conducted to compare the conventional bright field method and the Zernike phase contrast method on their phase defect detection sensitivity by thin mask simulations and experiments using the SHARP EUV microscope at Lawrence Berke- ley National Laboratory (LBNL). The study shows that higher defect detection sensitivity and in-focus inspection capability can be achieved by the Zernike phase contrast method, while the conventional bright field method needs through-focus scanning and results in lower defect detection sensitivity. Experimental results show that a programmed defect as small as 0.35 nm in height is detected at best focus with a signal-to-noise ratio (SNR) ≈ 8 by the Zernike phase contrast method. With the considerations of various noise sources and system design, the thin mask simulation results show that the dark field method has better detection efficiency in inspection mode, while the Zernike phase contrast method is better in review mode (pixel size ≤ 25 nm). Further, the impact of pixel size, EUV source type, and photon collection efficiency for a dark field based actinic blank inspection tool is discussed by thin mask simulation. The simulation results show the complex correlation between each parameter on defect inspection efficiency and also show that 10-watt EUV source power and 100 nm pixel size are needed to capture a phase defect of height 0.5 nm. For EUV patterned mask inspection, the possibility of using the optimum phase shift in the pupil plane to improve inspection efficiency is discussed using a thin mask model. Then the nature of the EUV mask pattern defect is analyzed by its near field distribution using a thick mask model. The simulation results indicate that, as a result of 3D effects leading to phase artifacts, pattern defects cannot be simply treated as ideal absorber defects. The results can affect the choice of optimal patterned mask inspection tool design. Moreover, a study of a bright field based EUV actinic pattern inspection tool design using a hybrid (2D + 3D) model is presented, showing that the impact of noise sources and optical design on critical pattern defects detection sensitivity. The study shows that introducing a − 50 nm defocus into the inspection system can improve the SNR by 50%. The impact of EUV sub-resolution assist feature (SRAF) on mitigation of mask 3D effects is discussed by rigorous 3D modeling. The simulation results show that introducing SRAFs in the mask design induces even stronger effective single pole aberration into the imaging system to balance the Bossung curve. Asymmetric SRAFs pattern placement can achieve a 21% improvement of the process window. Moreover, the complex interaction between the main feature and the SRAFs is analyzed by systematic position sensitivity studies. Bossung tilt sensitivity with respect to the relative positions between main feature and SRAFs is shown, which indicates that different location precision requirements are needed for SRAFs during the mask-making process.
Mask Defect Verification Using Actinic Inspection And Defect Mitigation Technology
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Author :
language : en
Publisher:
Release Date : 2009
Mask Defect Verification Using Actinic Inspection And Defect Mitigation Technology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. The successful production of defect-free masks will depend on the timely development of defect inspection tools, including both mask blank inspection tools and absorber pattern inspection tools to meet the 22 nm half-pitch node. EUV mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360 is operated at SEMA TECH's Mask blank Development Center (MBDC) in Albany, with sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for the next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. This paper will also discuss the kind of infrastructure that will be required in the development and mass production stages.
Wavelength Specific Reflections
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Author :
language : en
Publisher:
Release Date : 2010
Wavelength Specific Reflections written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV Lithography in particular faces unique challenges. EUV masks resonant-reflective multilayer coatings have a narrow, wavelength-specific response that dramatically affects the way that defects appear, or disappear, at various illuminating wavelengths. Furthermore, the ever-shrinking size of 'critical' defects limits the potential effectiveness of DUV inspection techniques over time. Researchers pursuing numerous ways of finding and characterizing defects on EUV masks and have met with varying degrees of success. Their lessons inform the current, urgent exploration to select the most effective techniques for high-volume manufacturing. Ranging from basic research and demonstration experiments to commercial inspection tool prototypes, we survey the recent history of work in this area, including sixteen projects in Europe, Asia, and America. Solutions range from scanning beams to microscopy, dark field imaging to pattern transfer.
Printability And Inspectability Of Defects On The Euv Mask For Sub32nm Half Pitch Hvm Application
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Author :
language : en
Publisher:
Release Date : 2011
Printability And Inspectability Of Defects On The Euv Mask For Sub32nm Half Pitch Hvm Application written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full field EUV mask is fabricated to see the printability of various defects on the mask. Programmed pit defect shows that minimum printable size of pits could be 17 nm of SEVD from the AIT. However 23.1nm in SEVD is printable from the EUV ADT. Defect printability and identification of its source along from blank fabrication to mask fabrication were studied using various inspection tools. Capture ratio of smallest printable defects was improved to 80% using optimized stack of metrical on wafer and state-of-art wafer inspection tool. Requirement of defect mitigation technology using fiducial mark are defined.
Simulation And Compensation Methods For Euv Lithography Masks With Buried Defects
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Author : Chris Heinz Clifford
language : en
Publisher:
Release Date : 2010
Simulation And Compensation Methods For Euv Lithography Masks With Buried Defects written by Chris Heinz Clifford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Particle Removal Challenges With Euv Patterned Mask For The Sub 22nm Hp Node
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Author :
language : en
Publisher:
Release Date : 2010
Particle Removal Challenges With Euv Patterned Mask For The Sub 22nm Hp Node written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
The particle removal efficiency (PRE) of cleaning processes diminishes whenever the minimum defect size for a specific technology node becomes smaller. For the sub-22 nm half-pitch (HP) node, it was demonstrated that exposure to high power megasonic up to 200 W/cm2 did not damage 60 nm wide TaBN absorber lines corresponding to the 16 nm HP node on wafer. An ammonium hydroxide mixture and megasonics removes ≥50 nm SiO2 particles with a very high PRE, A sulfuric acid hydrogen peroxide mixture (SPM) in addition to ammonium hydroxide mixture (APM) and megasonic is required to remove ≥28 nm SiO2 particles with a high PRE. Time-of-flight secondary ion mass spectroscopy (TOFSIMS) studies show that the presence of O2 during a vacuum ultraviolet (VUV) ([lambda] = 172 nm) surface conditioning step will result in both surface oxidation and Ru removal, which drastically reduce extreme ultraviolet (EUV) mask life time under multiple cleanings. New EUV mask cleaning processes show negligible or no EUV reflectivity loss and no increase in surface roughness after up to 15 cleaning cycles. Reviewing of defect with a high current density scanning electron microscope (SEM) drastically reduces PRE and deforms SiO2 particles. 28 nm SiO2 particles on EUV masks age very fast and will deform over time, Care must be taken when reviewing EUV mask defects by SEM. Potentially new particles should be identified to calibrate short wavelength inspection tools, Based on actinic image review, 50 nm SiO2 particles on top of the EUV mask will be printed on the wafer.
Euv Lithography
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Author : Vivek Bakshi
language : en
Publisher: SPIE Press
Release Date : 2009
Euv Lithography written by Vivek Bakshi and has been published by SPIE Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Art categories.
Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.
Design And Evaluation Of System Configurations For An Euv Mask Inspection Microscope
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Author :
language : en
Publisher:
Release Date : 2002
Design And Evaluation Of System Configurations For An Euv Mask Inspection Microscope written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
This document is the third sub-report of the EUV AIM design study being conducted at LLNL on behalf of International Sematech (ISMT). The purpose of this study as identified in section 1.2 of the statement of work is to research the basic user requirements of an actinic defect characterization tool, potential design configurations and top-level specifications. The objectives of this design study specifically identified in section 1.3 of the statement of work were to: (1) Determine the user requirements of an actinic defect characterization tool; (2) Determine if an EUV AIM tool is an appropriate platform for actinic defect characterization; (3) Determine possible design configurations and top-level performance specifications; (4) Identify potential technical issues and risks of different technical approaches; (5) Provide estimates of cost relating to different technical approaches; and (6) Provide simulated performance for key subsystems and the entire system. The sub-sections of the study to be addressed were accordingly defined in the statement of work as being: (1) Formulation of top-level specifications; (2) Identification of system configurations suitable for meeting the top-level specifications; (3) Preliminary design of imaging systems; (4) Preliminary design of illumination systems; (5) Prediction and comparison of performance through aerial image calculation; (6) Identification of sub-system requirements; (7) Identification of potential vendors; (8) Estimation of system cost; (9) Identification of technical issues; and (10) Definition of technology transfer or development required. Points 1 and 2 have already been addressed in previous reports to ISMT. This document addresses points 3 to 7, and 9 to 10 of the above list--formulation of a preliminary design of the imaging and illumination systems and the evaluation and comparison of potential designs through aerial image analysis. As such this report should be read in conjunction with and in the context of the previous two reports which separately addressed points 1 and 2 above. Item 8, estimation of system cost, will be addressed in a separate confidential report to ISMT. A number of potential configurations for an EUV AIM tool have been studied and technical aspects of the design approaches investigated. The requirements for AIM mode of emulating stepper quality imaging have been spelt out and strategies developed for assessing the suitability of different approaches to satisfying the technical requirements for AIM mode. A synopsis of the approaches considered, and conclusions reached, is presented in Table 17 below. Preliminary designs of several system configurations have been performed, and for each approach potential technical risks have been identified; illumination and source requirements have been analyzed for each implementation and may factor into selection of technical approach. It is important to note that identification of risk or required development does not disqualify a particular approach, rather it serves to raise an issue which must be addressed in any proposal to build a tool.
Nano And Giga Challenges In Microelectronics
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Author : J. Greer
language : en
Publisher: Elsevier
Release Date : 2003-10-24
Nano And Giga Challenges In Microelectronics written by J. Greer and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-10-24 with Technology & Engineering categories.
The book is designed as an introduction for engineers and researchers wishing to obtain a fundamental knowledge and a snapshot in time of the cutting edge in technology research. As a natural consequence, Nano and Giga Challenges is also an essential reference for the "gurus" wishing to keep abreast of the latest directions and challenges in microelectronic technology development and future trends. The combination of viewpoints presented within the book can help to foster further research and cross-disciplinary interaction needed to surmount the barriers facing future generations of technology design. Key Features: • Quickly becoming the hottest topic of the new millennium (2.4 billion dollars funding in US alone • Current status and future trends of micro and nanoelectronics research • Written by leading experts in the corresponding research areas • Excellent tutorial for graduate students and reference for "gurus"
Microlithography
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Author : Bruce W. Smith
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Microlithography written by Bruce W. Smith and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
This new edition of the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from elementary concepts to advanced aspects of modern submicron microlithography. Each chapter reflects the current research and practices from the world's leading academic and industrial laboratories detailed by a stellar panel of international experts. New in the Second Edition In addition to updated information on existing material, this new edition features coverage of technologies developed over the last decade since the first edition appeared, including: Immersion Lithography 157nm Lithography Electron Projection Lithography (EPL) Extreme Ultraviolet (EUV) Lithography Imprint Lithography Photoresists for 193nm and Immersion Lithography Scatterometry Microlithography: Science and Technology, Second Edition authoritatively covers the physics, chemistry, optics, metrology tools and techniques, resist processing and materials, and fabrication methods involved in the latest generations of microlithography such as immersion lithography and extreme ultraviolet (EUV) lithography. It also looks ahead to the possible future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current literature, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to achieve robust, accurate, and cost-effective microlithography processes and systems.