Leakage Current And Defect Characterization Of Short Channel Mosfets
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Leakage Current And Defect Characterization Of Short Channel Mosfets
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Author : Guntrade Roll
language : en
Publisher: Logos Verlag Berlin GmbH
Release Date : 2012
Leakage Current And Defect Characterization Of Short Channel Mosfets written by Guntrade Roll and has been published by Logos Verlag Berlin GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Science categories.
The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.
Leakage Current And Defect Characterization Of Short Channel Mosfets
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Author : Guntrade Roll
language : en
Publisher:
Release Date : 2012
Leakage Current And Defect Characterization Of Short Channel Mosfets written by Guntrade Roll and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
Electrical Characterization Of Silicon On Insulator Materials And Devices
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Author : Sorin Cristoloveanu
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Electrical Characterization Of Silicon On Insulator Materials And Devices written by Sorin Cristoloveanu and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Nanoelectronics
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Author : Balwinder Raj
language : en
Publisher: CRC Press
Release Date : 2025-05-15
Nanoelectronics written by Balwinder Raj and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-05-15 with Technology & Engineering categories.
This book exhibits a unique way of explaining nanomaterials and devices and analyzing their design parameters to meet the sub-nanoregime challenges for low-power chip design. Since process variability, device sizing, and power supply scaling are ongoing challenges in very large-scale integration (VLSI) circuit designs, this book highlights the conventional and novel nanomaterials, devices and circuits, leakage current mitigation techniques, and other important trade-offs along with exhaustive analysis. More focus has been placed throughout the book on various trade-offs for high-speed and low-power VLSI devices and circuits co-design. This book: • Discusses advanced nano-semiconductor devices such as FinFET, nanowires, tunnel field-effect transistors, carbon nanotube field-effect transistors, and high-electron-mobility transistors. • Presents high-performance semiconductor devices at nanoscale technology nodes for the analysis of quantum effects and their impact on circuits and systems. • Covers power dissipation and reduction techniques for high-performance devices. • Explains both silicon and non-silicon devices for various applications like digital logic and analog/radio frequency applications. • Examines the difficulties and practical design approaches for extremely low-power analog-integrated circuits. It is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology.
Mosfet Modeling Bsim3 User S Guide
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Author : Yuhua Cheng
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-05-08
Mosfet Modeling Bsim3 User S Guide written by Yuhua Cheng and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-05-08 with Technology & Engineering categories.
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Physics Of Semiconductor Devices
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Author : V. K. Jain
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Physics Of Semiconductor Devices written by V. K. Jain and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Science categories.
The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
Low Power Cmos Circuits
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Author : Christian Piguet
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Low Power Cmos Circuits written by Christian Piguet and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
The power consumption of microprocessors is one of the most important challenges of high-performance chips and portable devices. In chapters drawn from Piguet's recently published Low-Power Electronics Design, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools addresses the design of low-power circuitry in deep submicron technologies. It provides a focused reference for specialists involved in designing low-power circuitry, from transistors to logic gates. The book is organized into three broad sections for convenient access. The first examines the history of low-power electronics along with a look at emerging and possible future technologies. It also considers other technologies, such as nanotechnologies and optical chips, that may be useful in designing integrated circuits. The second part explains the techniques used to reduce power consumption at low levels. These include clock gating, leakage reduction, interconnecting and communication on chips, and adiabatic circuits. The final section discusses various CAD tools for designing low-power circuits. This section includes three chapters that demonstrate the tools and low-power design issues at three major companies that produce logic synthesizers. Providing detailed examinations contributed by leading experts, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools supplies authoritative information on how to design and model for high performance with low power consumption in modern integrated circuits. It is a must-read for anyone designing modern computers or embedded systems.
Single Atom Nanoelectronics
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Author : Enrico Prati
language : en
Publisher: CRC Press
Release Date : 2016-04-19
Single Atom Nanoelectronics written by Enrico Prati and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-19 with Science categories.
Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Noise In Nanoscale Semiconductor Devices
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Author : Tibor Grasser
language : en
Publisher: Springer Nature
Release Date : 2020-04-26
Noise In Nanoscale Semiconductor Devices written by Tibor Grasser and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-04-26 with Technology & Engineering categories.
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.