Low C Esd Protection Design In Cmos Technology

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Low C Esd Protection Design In Cmos Technology

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Author : Chun-Yu Lin
language : en
Publisher:
Release Date : 2022

Low C Esd Protection Design In Cmos Technology written by Chun-Yu Lin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with Electronic books categories.

Electrostatic discharge (ESD) protection design is needed for integrated circuits in CMOS technology. The choice for ESD protection devices in the CMOS technology includes diode, MOSFET, and silicon controlled rectifier (SCR). These ESD protection devices cause signal losses at high-frequency input/output (I/O) pads due to the parasitic capacitance. To minimize the impacts from ESD protection circuit on high-frequency performances, ESD protection circuit at I/O pads must be carefully designed. A review on ESD protection designs with low parasitic capacitance for high-frequency applications in CMOS technology is presented in this chapter. With the reduced parasitic capacitance, ESD protection circuit can be easily combined or co-designed with high-frequency circuits. As the operating frequencies of high-frequency circuits increase, on-chip ESD protection designs for high-frequency applications will continuously be an important design task.

Esd Protection Device And Circuit Design For Advanced Cmos Technologies

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Author : Oleg Semenov
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-04-26

Esd Protection Device And Circuit Design For Advanced Cmos Technologies written by Oleg Semenov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-26 with Technology & Engineering categories.

ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

On Chip Esd Protection For Integrated Circuits

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Author : Albert Z.H. Wang
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-01-03

On Chip Esd Protection For Integrated Circuits written by Albert Z.H. Wang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-01-03 with Technology & Engineering categories.

This comprehensive and insightful book discusses ESD protection circuit design problems from an IC designer's perspective. On-Chip ESD Protection for Integrated Circuits: An IC Design Perspective provides both fundamental and advanced materials needed by a circuit designer for designing ESD protection circuits, including: Testing models and standards adopted by U.S. Department of Defense, EIA/JEDEC, ESD Association, Automotive Electronics Council, International Electrotechnical Commission, etc. ESD failure analysis, protection devices, and protection of sub-circuits Whole-chip ESD protection and ESD-to-circuit interactions Advanced low-parasitic compact ESD protection structures for RF and mixed-signal IC's Mixed-mode ESD simulation-design methodologies for design prediction ESD-to-circuit interactions, and more! Many real world ESD protection circuit design examples are provided. The book can be used as a reference book for working IC designers and as a textbook for students in the IC design field.

Basic Esd And I O Design

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Author : Sanjay Dabral
language : en
Publisher: Wiley-Interscience
Release Date : 1998

Basic Esd And I O Design written by Sanjay Dabral and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Computers categories.

This volume presents an integrated treatment of ESD, I/O, and process parameter interactions that both I/O designers and process designers can use. It examines key factors in I/O and ESD design and testing, and helps the reader consider ESD and reliability issues up front when making I/O choices. Emphasizing clarity and simplicity, this book focuses on design principles that can be applied widely as this dynamic field continues to evolve.

Designing Shallow Trench Isolation Diodes As Electrostatic Discharge Protection For Applications In Deep Submicron Cmos Technology

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Author : Thomas Chung Kin Au
language : en
Publisher:
Release Date : 2013

Designing Shallow Trench Isolation Diodes As Electrostatic Discharge Protection For Applications In Deep Submicron Cmos Technology written by Thomas Chung Kin Au and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with Electric discharges categories.

Developing electrostatic discharge (ESD) protection devices has traditionally relied on fabricating test chips during early stages of the integrated circuit design and subsequently testing the devices for optimization. However, in deep-submicron (DSM) CMOS technologies, fabricating test chips are unfeasible due to the cost and timing constraints. As a result, using 2-D device simulations to predict the failure point and to optimize ESD protection devices are becoming the preferred approach. Shallow trench isolation (STI) diodes available in DSM CMOS technologies have been widely used for ESD protection in high-speed mixed-signal and RF applications. In this thesis, 0.13 [mu]m CMOS STI diodes have been calibrated and simulated using SEQUOIA Device Designer and the results allow to accurately predict the failure point and to optimize diode geometries for high-speed mixed-signal and RF applications. The proposed methodology can also be used in practice to aid the design of ESD protection in future deep submicron CMOS technologies.

Cmos Current Mode Circuits For Data Communications

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Author : Fei Yuan
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-04-26

Cmos Current Mode Circuits For Data Communications written by Fei Yuan and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-26 with Technology & Engineering categories.

This book deals with the analysis and design of CMOS current-mode circuits for data communications. CMOS current-mode sampled-data networks, i.e. switched-current circuits, are excluded. Major subjects covered in the book include: a critical comparison of voltage-mode and current-mode circuits; the building blocks of current-mode circuits: design techniques; modeling of wire channels, electrical signaling for Gbps data communications; ESD protection for current-mode circuits and more. This book will appeal to IC design engineers, hardware system engineers and others.

Electrostatic Discharge Protection

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Author : Juin J. Liou
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Electrostatic Discharge Protection written by Juin J. Liou and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.

Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.

Modeling Simulation And Design Guidelines For Eos Esd Protection Circuits In Cmos Technologies

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Author : Sridhar Ramaswamy
language : en
Publisher:
Release Date : 1996

Modeling Simulation And Design Guidelines For Eos Esd Protection Circuits In Cmos Technologies written by Sridhar Ramaswamy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.

Electrical Overstress (EOS) and Electrostatic Discharge (ESD) are major causes for integrated circuit (IC) field failures. Industry surveys indicate that nearly 50% of all IC field failures can be attributed to EOS/ESD events. The susceptibility to EOS/ESD increases as the minimum feature size in ICs is reduced. In order to protect the internal circuitry from EOS/ESD, various on-chip protection schemes have been proposed and are being used in commercial ICs. In this thesis, we have provided a review of various on-chip protection circuits commonly used in advanced CMOS ICs. We propose that current profiles should be used for EOS qualification. We show that current profiles, along with failure analyses, can be used to develop useful design guidelines for EOS/ESD protection circuit layout. We investigate the effect of chip capacitance on the EOS/ESD performance of protection circuits and provide guidelines for device design. Deep submicron silicon-on-insulator (SOI) is potentially an important technology for low voltage applications. We provide practical guidelines for designing protection devices in this technology. Recent advances in processing technology and very-large-scale integration (VLSI) scaling has increased the demand for more effective protection circuits. So far, no significant modeling programs were available to analyze and design these circuits. We have developed models which describe the high current behavior in MOSFETs, diffusion resistors, reverse-biased diodes and bipolar transistors. These models have been included in the circuit-level electrothermal simulator, iETSIM. It has been shown that at second breakdown, the protection device suffers permanent damage. By modeling the device behavior up to the onset of second breakdown, we can determine the operation limit of the protection element. We have developed electrothermal models to describe the onset of second breakdown in the protection devices. In semiconductor junctions that are reverse-biased by an EOS event, second breakdown is shown to occur when the thermal generation current becomes high enough to sustain the stress and the generation of carriers due to impact ionization decreases. Electrothermal models for MOSFETs, diffusion resistors, diodes and bipolar transistors have been included in iETSIM, which can predict the EOS robustness of these protection elements.

Low Power Circuit Design Using Advanced Cmos Technology

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Author : Milin Zhang
language : en
Publisher: CRC Press
Release Date : 2022-09-01

Low Power Circuit Design Using Advanced Cmos Technology written by Milin Zhang and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-09-01 with Technology & Engineering categories.

Low Power Circuit Design Using Advanced CMOS Technology is a summary of lectures from the first Advanced CMOS Technology Summer School (ACTS) 2017. The slides are selected from the handouts, while the text was edited according to the lecturers talk.ACTS is a joint activity supported by the IEEE Circuit and System Society (CASS) and the IEEE Solid-State Circuits Society (SSCS). The goal of the school is to provide society members as well researchers and engineers from industry the opportunity to learn about new emerging areas from leading experts in the field. ACTS is an example of high-level continuous education for junior engineers, teachers in academe, and students. ACTS was the results of a successful collaboration between societies, the local chapter leaders, and industry leaders. This summer school was the brainchild of Dr. Zhihua Wang, with strong support from volunteers from both the IEEE SSCS and CASS. In addition, the local companies, Synopsys China and Beijing IC Park, provided support.This first ACTS was held in the summer 2017 in Beijing. The lectures were given by academic researchers and industry experts, who presented each 6-hour long lectures on topics covering process technology, EDA skill, and circuit and layout design skills. The school was hosted and organized by the CASS Beijing Chapter, SSCS Beijing Chapter, and SSCS Tsinghua Student Chapter. The co-chairs of the first ACTS were Dr. Milin Zhang, Dr. Hanjun Jiang and Dr. Liyuan Liu. The first ACTS was a great success as illustrated by the many participants from all over China as well as by the publicity it has been received in various media outlets, including Xinhua News, one of the most popular news channels in China.

Esd Protection Devices For Cmos Technologies

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Author : Christian Russ
language : en
Publisher:
Release Date : 1999

Esd Protection Devices For Cmos Technologies written by Christian Russ and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with categories.