Modeling Simulation And Design Guidelines For Eos Esd Protection Circuits In Cmos Technologies
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Modeling Simulation And Design Guidelines For Eos Esd Protection Circuits In Cmos Technologies
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Author : Sridhar Ramaswamy
language : en
Publisher:
Release Date : 1996
Modeling Simulation And Design Guidelines For Eos Esd Protection Circuits In Cmos Technologies written by Sridhar Ramaswamy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
Electrical Overstress (EOS) and Electrostatic Discharge (ESD) are major causes for integrated circuit (IC) field failures. Industry surveys indicate that nearly 50% of all IC field failures can be attributed to EOS/ESD events. The susceptibility to EOS/ESD increases as the minimum feature size in ICs is reduced. In order to protect the internal circuitry from EOS/ESD, various on-chip protection schemes have been proposed and are being used in commercial ICs. In this thesis, we have provided a review of various on-chip protection circuits commonly used in advanced CMOS ICs. We propose that current profiles should be used for EOS qualification. We show that current profiles, along with failure analyses, can be used to develop useful design guidelines for EOS/ESD protection circuit layout. We investigate the effect of chip capacitance on the EOS/ESD performance of protection circuits and provide guidelines for device design. Deep submicron silicon-on-insulator (SOI) is potentially an important technology for low voltage applications. We provide practical guidelines for designing protection devices in this technology. Recent advances in processing technology and very-large-scale integration (VLSI) scaling has increased the demand for more effective protection circuits. So far, no significant modeling programs were available to analyze and design these circuits. We have developed models which describe the high current behavior in MOSFETs, diffusion resistors, reverse-biased diodes and bipolar transistors. These models have been included in the circuit-level electrothermal simulator, iETSIM. It has been shown that at second breakdown, the protection device suffers permanent damage. By modeling the device behavior up to the onset of second breakdown, we can determine the operation limit of the protection element. We have developed electrothermal models to describe the onset of second breakdown in the protection devices. In semiconductor junctions that are reverse-biased by an EOS event, second breakdown is shown to occur when the thermal generation current becomes high enough to sustain the stress and the generation of carriers due to impact ionization decreases. Electrothermal models for MOSFETs, diffusion resistors, diodes and bipolar transistors have been included in iETSIM, which can predict the EOS robustness of these protection elements.
Esd Protection Device And Circuit Design For Advanced Cmos Technologies
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Author : Oleg Semenov
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-04-26
Esd Protection Device And Circuit Design For Advanced Cmos Technologies written by Oleg Semenov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-26 with Technology & Engineering categories.
ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.
Esd In Silicon Integrated Circuits
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Author : E. Ajith Amerasekera
language : en
Publisher: John Wiley & Sons
Release Date : 2002-05-22
Esd In Silicon Integrated Circuits written by E. Ajith Amerasekera and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-05-22 with Technology & Engineering categories.
* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.
Modeling Simulation And Design Of Eos Esd Protection Devices And Circuits In Silicon On Insulator Technology
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Author : Prasun Kumar Raha
language : en
Publisher:
Release Date : 1998
Modeling Simulation And Design Of Eos Esd Protection Devices And Circuits In Silicon On Insulator Technology written by Prasun Kumar Raha and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.
Modeling Of Electrical Overstress In Integrated Circuits
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Author : Carlos H. Diaz
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Modeling Of Electrical Overstress In Integrated Circuits written by Carlos H. Diaz and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.
On Chip Esd Protection For Integrated Circuits
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Author : Albert Z.H. Wang
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-01-03
On Chip Esd Protection For Integrated Circuits written by Albert Z.H. Wang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-01-03 with Technology & Engineering categories.
This comprehensive and insightful book discusses ESD protection circuit design problems from an IC designer's perspective. On-Chip ESD Protection for Integrated Circuits: An IC Design Perspective provides both fundamental and advanced materials needed by a circuit designer for designing ESD protection circuits, including: Testing models and standards adopted by U.S. Department of Defense, EIA/JEDEC, ESD Association, Automotive Electronics Council, International Electrotechnical Commission, etc. ESD failure analysis, protection devices, and protection of sub-circuits Whole-chip ESD protection and ESD-to-circuit interactions Advanced low-parasitic compact ESD protection structures for RF and mixed-signal IC's Mixed-mode ESD simulation-design methodologies for design prediction ESD-to-circuit interactions, and more! Many real world ESD protection circuit design examples are provided. The book can be used as a reference book for working IC designers and as a textbook for students in the IC design field.
Electrostatic Discharge Protection
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Author : Juin J. Liou
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Electrostatic Discharge Protection written by Juin J. Liou and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.
Esd Design Challenges And Strategies In Deeply Scaled Integrated Circuits
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Author : Shuqing Cao
language : en
Publisher: Stanford University
Release Date : 2010
Esd Design Challenges And Strategies In Deeply Scaled Integrated Circuits written by Shuqing Cao and has been published by Stanford University this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.
Esd Protection Methodologies
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Author : Marise Bafleur
language : en
Publisher: Elsevier
Release Date : 2017-07-26
Esd Protection Methodologies written by Marise Bafleur and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-26 with Technology & Engineering categories.
Failures caused by electrostatic discharges (ESD) constitute a major problem concerning the reliability and robustness of integrated circuits and electronic systems. This book summarizes the many diverse methodologies aimed at ESD protection and shows, through a number of concrete studies, that the best approach in terms of robustness and cost-effectiveness consists of implementing a global strategy of ESD protection. ESD Protection Methodologies begins by exploring the various normalized test techniques that are used to qualify ESD robustness as well as characterization and defect localization methods aimed at implementing corrective measures. Due to the increasing complexity of integrated circuits, it is important to be able to provide a simulation in which the implemented ESD protection strategy provides the desired protection, while not harming the performance levels of the circuit. Therefore, the main features and difficulties related to the different types of simulation, finite element, SPICE-type and behavioral, are then studied. To conclude, several case studies are presented which provide real-life examples of the approaches explained in the previous chapters and validate a number of the strategies from component to system level. Provides a global ESD protection approach from component to system, including both the proposal of investigation techniques and predictive simulation methodologies Addresses circuit and system designers as well as failure analysis engineers Provides the description of specifically developed investigation techniques and the application of the proposed methodologies to real case studies
A Chip Level Cdm Esd Protection Circuit Modeling And Simulation Method And Experimental Verification
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Author : Han Wang
language : en
Publisher:
Release Date : 2018
A Chip Level Cdm Esd Protection Circuit Modeling And Simulation Method And Experimental Verification written by Han Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Electric discharges categories.
This thesis describes a novel distributed electrostatic charge distribution model and a new circuit-level simulation method to enable accurate full-chip CDM ESD protection circuit simulation, aiming to achieve CDM ESD protection design prediction and hence, first-Silicon design success in developing CDM ESD protection solutions for advanced ICs. The new CDM ESD model and simulation techniques developed was verified in ICs implemented in a commercial 28nm CMOS technology.