Modeling Simulation And Design Of Eos Esd Protection Devices And Circuits In Silicon On Insulator Technology
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Modeling Simulation And Design Of Eos Esd Protection Devices And Circuits In Silicon On Insulator Technology
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Author : Prasun Kumar Raha
language : en
Publisher:
Release Date : 1998
Modeling Simulation And Design Of Eos Esd Protection Devices And Circuits In Silicon On Insulator Technology written by Prasun Kumar Raha and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.
Esd
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Author : Steven H. Voldman
language : en
Publisher: John Wiley & Sons
Release Date : 2006-02-03
Esd written by Steven H. Voldman and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-02-03 with Technology & Engineering categories.
The scaling of semiconductor devices from sub-micron to nanometer dimensions is driving the need for understanding the design of electrostatic discharge (ESD) circuits, and the response of these integrated circuits (IC) to ESD phenomena. ESD Circuits and Devices provides a clear insight into the layout and design of circuitry for protection against electrical overstress (EOS) and ESD. With an emphasis on examples, this text: explains ESD buffering, ballasting, current distribution, design segmentation, feedback, coupling, and de-coupling ESD design methods; outlines the fundamental analytical models and experimental results for the ESD design of MOSFETs and diode semiconductor device elements, with a focus on CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe) technology; focuses on the ESD design, optimization, integration and synthesis of these elements and concepts into ESD networks, as well as applying within the off-chip driver networks, and on-chip receivers; and highlights state-of-the-art ESD input circuits, as well as ESD power clamps networks. Continuing the author’s series of books on ESD, this book will be an invaluable reference for the professional semiconductor chip and system ESD engineer. Semiconductor device and process development, quality, reliability and failure analysis engineers will also find it an essential tool. In addition, both senior undergraduate and graduate students in microelectronics and IC design will find its numerous examples useful.
Esd
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Author : Steven H. Voldman
language : en
Publisher: John Wiley & Sons
Release Date : 2009-07-01
Esd written by Steven H. Voldman and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-07-01 with Technology & Engineering categories.
Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology. Look inside for extensive coverage on: failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems; electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR), tunneling magneto-resistor (TMR), devices; micro electro-mechanical (MEM) systems, and photo-masks and reticles; practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis); the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in today’s products. ESD: Failure Mechanisms and Models is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era.
Esd Design Challenges And Strategies In Deeply Scaled Integrated Circuits
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Author : Shuqing Cao
language : en
Publisher: Stanford University
Release Date : 2010
Esd Design Challenges And Strategies In Deeply Scaled Integrated Circuits written by Shuqing Cao and has been published by Stanford University this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.
Silicon On Insulator Soi Technology
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Author : O. Kononchuk
language : en
Publisher: Elsevier
Release Date : 2014-06-19
Silicon On Insulator Soi Technology written by O. Kononchuk and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-06-19 with Technology & Engineering categories.
Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. Covers SOI transistors and circuits, as well as manufacturing processes and reliability Looks at applications such as memory, power devices, and photonics
Esd
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Author : Steven H. Voldman
language : en
Publisher: John Wiley & Sons
Release Date : 2005-12-13
Esd written by Steven H. Voldman and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-12-13 with Technology & Engineering categories.
This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.
Esd Protection Device And Circuit Design For Advanced Cmos Technologies
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Author : Oleg Semenov
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-04-26
Esd Protection Device And Circuit Design For Advanced Cmos Technologies written by Oleg Semenov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-26 with Technology & Engineering categories.
ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.
Modeling Of Electrical Overstress In Integrated Circuits
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Author : Carlos H. Diaz
language : en
Publisher: Springer Science & Business Media
Release Date : 1994-11-30
Modeling Of Electrical Overstress In Integrated Circuits written by Carlos H. Diaz and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-11-30 with Technology & Engineering categories.
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.
Modeling Simulation And Design Guidelines For Eos Esd Protection Circuits In Cmos Technologies
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Author : Sridhar Ramaswamy
language : en
Publisher:
Release Date : 1996
Modeling Simulation And Design Guidelines For Eos Esd Protection Circuits In Cmos Technologies written by Sridhar Ramaswamy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
Electrical Overstress (EOS) and Electrostatic Discharge (ESD) are major causes for integrated circuit (IC) field failures. Industry surveys indicate that nearly 50% of all IC field failures can be attributed to EOS/ESD events. The susceptibility to EOS/ESD increases as the minimum feature size in ICs is reduced. In order to protect the internal circuitry from EOS/ESD, various on-chip protection schemes have been proposed and are being used in commercial ICs. In this thesis, we have provided a review of various on-chip protection circuits commonly used in advanced CMOS ICs. We propose that current profiles should be used for EOS qualification. We show that current profiles, along with failure analyses, can be used to develop useful design guidelines for EOS/ESD protection circuit layout. We investigate the effect of chip capacitance on the EOS/ESD performance of protection circuits and provide guidelines for device design. Deep submicron silicon-on-insulator (SOI) is potentially an important technology for low voltage applications. We provide practical guidelines for designing protection devices in this technology. Recent advances in processing technology and very-large-scale integration (VLSI) scaling has increased the demand for more effective protection circuits. So far, no significant modeling programs were available to analyze and design these circuits. We have developed models which describe the high current behavior in MOSFETs, diffusion resistors, reverse-biased diodes and bipolar transistors. These models have been included in the circuit-level electrothermal simulator, iETSIM. It has been shown that at second breakdown, the protection device suffers permanent damage. By modeling the device behavior up to the onset of second breakdown, we can determine the operation limit of the protection element. We have developed electrothermal models to describe the onset of second breakdown in the protection devices. In semiconductor junctions that are reverse-biased by an EOS event, second breakdown is shown to occur when the thermal generation current becomes high enough to sustain the stress and the generation of carriers due to impact ionization decreases. Electrothermal models for MOSFETs, diffusion resistors, diodes and bipolar transistors have been included in iETSIM, which can predict the EOS robustness of these protection elements.
The Esd Handbook
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Author : Steven H. Voldman
language : en
Publisher: John Wiley & Sons
Release Date : 2021-03-02
The Esd Handbook written by Steven H. Voldman and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-03-02 with Technology & Engineering categories.
A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.