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Magnetic Memory Technology


Magnetic Memory Technology
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Magnetic Memory Technology


Magnetic Memory Technology
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Author : Denny D. Tang
language : en
Publisher: John Wiley & Sons
Release Date : 2021-01-07

Magnetic Memory Technology written by Denny D. Tang and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-07 with Science categories.


STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.



Magnetic Memory


Magnetic Memory
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Author : Denny D. Tang
language : en
Publisher: Cambridge University Press
Release Date : 2010-04-22

Magnetic Memory written by Denny D. Tang and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-04-22 with Technology & Engineering categories.


If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.



Emerging Non Volatile Memory Technologies


Emerging Non Volatile Memory Technologies
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Author : Wen Siang Lew
language : en
Publisher: Springer Nature
Release Date : 2021-01-09

Emerging Non Volatile Memory Technologies written by Wen Siang Lew and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-09 with Science categories.


This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.



Magnetic Information Storage Technology


Magnetic Information Storage Technology
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Author : Shan X. Wang
language : en
Publisher: Elsevier
Release Date : 1999-05-24

Magnetic Information Storage Technology written by Shan X. Wang and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-05-24 with Science categories.


This text explains how hard disk drives operate, how billions of bytes of digital information are stored and accessed, and where the technology is going. In particular, the book emphasizes the most fundamental principles of magnetic information storage, including in-depth knowledge of both magnetics and signal processing methods. Magnetic Information Storage Technology contains many graphic illustrations and an introduction of alternative storage technologies, such as optic disk recording, holographic recording, semiconductor flash memory, and magnetic random access memory. Provides the fundamentals of magnetic information storage and contrasts it with a comparison of alternative storage technologies Addresses the subject at the materials, device and system levels Addresses the needs of the multi-billion-dollar-a year magnetic recording and information storage industry Emphasizes both theoretical and experimental concepts Condenses current knowledge on magnetic information storage technology into one self-contained volume Suitable for undergraduate and graduate students, as well as seasoned researchers, engineers and professionals in data and information storage fields



Nonvolatile Memory Design


Nonvolatile Memory Design
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Author : Hai Li
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Nonvolatile Memory Design written by Hai Li and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Computers categories.


The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.



Advanced Memory Technology


Advanced Memory Technology
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Author : Ye Zhou
language : en
Publisher: Royal Society of Chemistry
Release Date : 2023-10-09

Advanced Memory Technology written by Ye Zhou and has been published by Royal Society of Chemistry this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-10-09 with Technology & Engineering categories.




Introduction To Magnetic Random Access Memory


Introduction To Magnetic Random Access Memory
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Author : Bernard Dieny
language : en
Publisher: John Wiley & Sons
Release Date : 2016-11-14

Introduction To Magnetic Random Access Memory written by Bernard Dieny and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-14 with Science categories.


Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.



Introduction To Magnetic Random Access Memory


Introduction To Magnetic Random Access Memory
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Author : Bernard Dieny
language : en
Publisher: John Wiley & Sons
Release Date : 2016-12-12

Introduction To Magnetic Random Access Memory written by Bernard Dieny and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-12-12 with Science categories.


Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.



Nanoscale Semiconductor Memories


Nanoscale Semiconductor Memories
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Author : Santosh K. Kurinec
language : en
Publisher: CRC Press
Release Date : 2017-07-28

Nanoscale Semiconductor Memories written by Santosh K. Kurinec and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-28 with Technology & Engineering categories.


Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.



Magnetic Memory


Magnetic Memory
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Author : Denny D. Tang
language : en
Publisher: Cambridge University Press
Release Date : 2010-04-22

Magnetic Memory written by Denny D. Tang and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-04-22 with Technology & Engineering categories.


If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.