Magnetotransport In Gan And Gaas Two Dimensional Electron Systems
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Magnetotransport In Gan And Gaas Two Dimensional Electron Systems
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Author : 陳光耀
language : en
Publisher:
Release Date : 2010
Magnetotransport In Gan And Gaas Two Dimensional Electron Systems written by 陳光耀 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Two Dimensional Electron Transport In Gan Gaas Based Heterostructures
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Author : Hailing Cheng
language : en
Publisher: LAP Lambert Academic Publishing
Release Date : 2014-03
Two Dimensional Electron Transport In Gan Gaas Based Heterostructures written by Hailing Cheng and has been published by LAP Lambert Academic Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03 with categories.
This book is on the fundamental studies of electron transport in different 2DEG systems. Electron transport in wide range of GaN samples were studied including in a high carrier density regime where a second conductive subband channel was occupied. The spin-orbit interaction were studied in the GaN heterostructures by using the weak antilocalization measurements. We also studied the energy relaxation processes in the GaN systems to understand the power dissipation. The second topic was electron dynamics on Quantum Hall liquid in GaAs system. We were able to study the Quantum Hall liquids in their deep insulating regime by using single electron transistors. The objective was to understand the charge motions in the quantum Hall liquid in an antidot structure, a particularly important structure for possible device applications in quantum computation. We have also shown that the response associated with the motion of electrons in the bulk of the integer quantum Hall layer could be enhanced by using multiple layers. This finding led us to a magnetometer application which was demonstrated by using a heterostructure with 25 identical multiple quantum wells.
Magnetotransport In Multi Component Two Dimensional Electron Systems
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Author : Tsong-Sheng Lay
language : en
Publisher:
Release Date : 1996
Magnetotransport In Multi Component Two Dimensional Electron Systems written by Tsong-Sheng Lay and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
Magnetotransport Study Of A High Mobility Two Dimensional Electron Gas
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Author : Girish Bohra
language : en
Publisher:
Release Date : 2009
Magnetotransport Study Of A High Mobility Two Dimensional Electron Gas written by Girish Bohra and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
This thesis is focused on an experimental study of the electrical properties of a two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Low temperature magneto-transport measurements are used to characterize the carrier density and mobility of this system. An extensive study of the temperature and current dependence of quantum-mechanical transport effects, observable at very low temperatures, is performed in the temperature range of 4.2-100 K, for measurement currents in the range of 10 nA- 100℗æA. The well-known decrease in the amplitude of the Shubnikov-de Haas effect, and an accompanying increase in the onset magnetic field of these oscillations, with increasing temperature, as well as a simultaneous suppression of the quantum-Hall effect, is observed. Similar behavior is found on increasing the measurement current. An analysis of the insulator to quantum Hall transition (I-QH), occurring in the two-dimensional electron gas at low perpendicular magnetic fields, is also reported, along with the results of investigations of electron heating based on the measurements of the energy-loss rate. This study shows that the direct I-QH transition does not always correspond to the onset of strong localization, with clear Shubnikov-de Haas oscillations being observed in the insulating regime. A linear dependence of the electron energy-loss rate and electron temperature in the temperature range of 4.2-40 K is determined, indicating that the main mechanism for electron energy relaxation is acoustic phonon scattering.
Huge Positive Magnetoresistance In Gaas Two Dimensional Electron Systems At High Temperatures
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Author : 王建中
language : en
Publisher:
Release Date : 2007
Huge Positive Magnetoresistance In Gaas Two Dimensional Electron Systems At High Temperatures written by 王建中 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Transport In Two Dimensional Gan Electron Systems
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Author : 黃健哲
language : en
Publisher:
Release Date : 2007
Transport In Two Dimensional Gan Electron Systems written by 黃健哲 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Magnetization Measurements On Low Dimensional Electron Systems In High Mobility Gaas And Sige Heterostructures
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Author : Marc Wilde
language : en
Publisher: Cuvillier Verlag
Release Date : 2005
Magnetization Measurements On Low Dimensional Electron Systems In High Mobility Gaas And Sige Heterostructures written by Marc Wilde and has been published by Cuvillier Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Nanoelectronic Materials Devices And Modeling
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Author : Qiliang Li
language : en
Publisher: MDPI
Release Date : 2019-07-15
Nanoelectronic Materials Devices And Modeling written by Qiliang Li and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-07-15 with Technology & Engineering categories.
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
Physics Of Semiconductors
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Author : José Menéndez
language : en
Publisher: AIP Conference Proceedings / M
Release Date : 2005
Physics Of Semiconductors written by José Menéndez and has been published by AIP Conference Proceedings / M this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Science categories.
Annotation All papers have been peer-reviewed. This is the most important conference in the field of semiconductor physics. It has been held biennially since 1951. The proceedings cover a wide range of topics, from fundamental structural, vibrational, and electronic properties to device applications. Special emphasis is given to areas of current interest such as nitride semiconductors, nanostructures, spintronics, and quantum computing. This volume is a fundamental reference for physicists, chemists, materials scientists, and electrical engineers.