Two Dimensional Electron Transport In Gan Gaas Based Heterostructures

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Two Dimensional Electron Transport In Gan Gaas Based Heterostructures

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Author : Hailing Cheng
language : en
Publisher: LAP Lambert Academic Publishing
Release Date : 2014-03

Two Dimensional Electron Transport In Gan Gaas Based Heterostructures written by Hailing Cheng and has been published by LAP Lambert Academic Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03 with categories.

This book is on the fundamental studies of electron transport in different 2DEG systems. Electron transport in wide range of GaN samples were studied including in a high carrier density regime where a second conductive subband channel was occupied. The spin-orbit interaction were studied in the GaN heterostructures by using the weak antilocalization measurements. We also studied the energy relaxation processes in the GaN systems to understand the power dissipation. The second topic was electron dynamics on Quantum Hall liquid in GaAs system. We were able to study the Quantum Hall liquids in their deep insulating regime by using single electron transistors. The objective was to understand the charge motions in the quantum Hall liquid in an antidot structure, a particularly important structure for possible device applications in quantum computation. We have also shown that the response associated with the motion of electrons in the bulk of the integer quantum Hall layer could be enhanced by using multiple layers. This finding led us to a magnetometer application which was demonstrated by using a heterostructure with 25 identical multiple quantum wells.

Transport Properties Of The Two Dimensional Electron Gas In Gaas Algaas Heterostructures

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Author : Barry Jia-fu Lin
language : en
Publisher:
Release Date : 1985

Transport Properties Of The Two Dimensional Electron Gas In Gaas Algaas Heterostructures written by Barry Jia-fu Lin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with categories.

Gan Based Materials And Devices

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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004

Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.

The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Gan Based Two Dimensional Electron Devices

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Author : M. S. Shur
language : en
Publisher:
Release Date : 1998

Gan Based Two Dimensional Electron Devices written by M. S. Shur and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.

We discuss the properties of the two dimensional (2D) electron gas at AlGaN/GaN heterointerface. The density of the 2D gas is affected by piezoelectric effects and by doping levels in both AlGaN and GaN layers. The record vatues of the sheet carrier density have been achieved wfth sheet electron densities of the two-dimensional electron gas on the order of 1.5 x 10(exp13)/cm2 and the sheet carrier concentration in the surface heterostructure channel as high as 4 x 10(exp13)/cm2. At high electron concentration, electrons are divided between the 2D and 3D states, and this division affects the electron mobility in the channeL Optical polar scattering, impurity scattering, and piezoelectric scattering limit the mobility. The largest electron mobility was observed in AIGaN/GaN heterostructures grown on SiC. At room temperature, the mobility is over 2,000 cm2/V-s; at cryogenic ten1peratures, the highest n%obdity is over 10,000 cm2/V-s. These values are high enough for the observation of the Quantum Hall Effect. Multichannel 2D electron structures are being developed that will allow us to achieve a much higher current density and much higher power.

Electron Transport In Low Dimensional Gan Aigan Heterostructure

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Author : Hongdao Zhou
language : en
Publisher:
Release Date : 2009

Electron Transport In Low Dimensional Gan Aigan Heterostructure written by Hongdao Zhou and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.

Handbook Of Nitride Semiconductors And Devices Electronic And Optical Processes In Nitrides

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Author : Hadis Morkoç
language : en
Publisher: John Wiley & Sons
Release Date : 2009-07-30

Handbook Of Nitride Semiconductors And Devices Electronic And Optical Processes In Nitrides written by Hadis Morkoç and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-07-30 with Technology & Engineering categories.

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.

Multigroup Equations For The Description Of The Particle Transport In Semiconductors

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Author : Martin Galler
language : en
Publisher: World Scientific
Release Date : 2005

Multigroup Equations For The Description Of The Particle Transport In Semiconductors written by Martin Galler and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.

Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a semiconductor heterostructure. Concerning semiconductor device simulation, several diodes and transistors fabricated of silicon and gallium arsenide are investigated. For all of these simulations, the numerical techniques employed are discussed in detail. This unique study of the application of direct methods for semiconductor device simulation provides the interested reader with an indispensable reference on this growing research area.

Nitride Wide Bandgap Semiconductor Material And Electronic Devices

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Author : Yue Hao
language : en
Publisher: CRC Press
Release Date : 2016-11-03

Nitride Wide Bandgap Semiconductor Material And Electronic Devices written by Yue Hao and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-03 with Computers categories.

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Advanced Indium Arsenide Based Hemt Architectures For Terahertz Applications

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Author : N. Mohankumar
language : en
Publisher: CRC Press
Release Date : 2021-09-28

Advanced Indium Arsenide Based Hemt Architectures For Terahertz Applications written by N. Mohankumar and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-09-28 with Science categories.

High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

Magnetotransport In Gan And Gaas Two Dimensional Electron Systems

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Author : 陳光耀
language : en
Publisher:
Release Date : 2010

Magnetotransport In Gan And Gaas Two Dimensional Electron Systems written by 陳光耀 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.