Electron Transport In Low Dimensional Gan Aigan Heterostructure
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Electron Transport In Low Dimensional Gan Aigan Heterostructure
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Author : Hongdao Zhou
language : en
Publisher:
Release Date : 2009
Electron Transport In Low Dimensional Gan Aigan Heterostructure written by Hongdao Zhou and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Two Dimensional Electron Transport In Gan Gaas Based Heterostructures
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Author : Hailing Cheng
language : en
Publisher: LAP Lambert Academic Publishing
Release Date : 2014-03
Two Dimensional Electron Transport In Gan Gaas Based Heterostructures written by Hailing Cheng and has been published by LAP Lambert Academic Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03 with categories.
This book is on the fundamental studies of electron transport in different 2DEG systems. Electron transport in wide range of GaN samples were studied including in a high carrier density regime where a second conductive subband channel was occupied. The spin-orbit interaction were studied in the GaN heterostructures by using the weak antilocalization measurements. We also studied the energy relaxation processes in the GaN systems to understand the power dissipation. The second topic was electron dynamics on Quantum Hall liquid in GaAs system. We were able to study the Quantum Hall liquids in their deep insulating regime by using single electron transistors. The objective was to understand the charge motions in the quantum Hall liquid in an antidot structure, a particularly important structure for possible device applications in quantum computation. We have also shown that the response associated with the motion of electrons in the bulk of the integer quantum Hall layer could be enhanced by using multiple layers. This finding led us to a magnetometer application which was demonstrated by using a heterostructure with 25 identical multiple quantum wells.
Low Dimensional Nitride Semiconductors
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Author : Bernard Gil
language : en
Publisher:
Release Date : 2002
Low Dimensional Nitride Semiconductors written by Bernard Gil and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.
Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.
Electron Transport In Low Dimensional Nanostructures Theoretical Study With Application
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Author : Xiaoliang Zhong
language : en
Publisher:
Release Date : 2013
Electron Transport In Low Dimensional Nanostructures Theoretical Study With Application written by Xiaoliang Zhong and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Nitride Semiconductors
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Author : Pierre Ruterana
language : en
Publisher: John Wiley & Sons
Release Date : 2003-06-09
Nitride Semiconductors written by Pierre Ruterana and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-06-09 with Computers categories.
Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.
Iii Nitride Semiconductor Materials
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Author : Zhe Chuan Feng
language : en
Publisher: World Scientific
Release Date : 2006-03-20
Iii Nitride Semiconductor Materials written by Zhe Chuan Feng and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-03-20 with Technology & Engineering categories.
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Nitride Wide Bandgap Semiconductor Material And Electronic Devices
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Author : Yue Hao
language : en
Publisher: CRC Press
Release Date : 2016-11-03
Nitride Wide Bandgap Semiconductor Material And Electronic Devices written by Yue Hao and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-03 with Computers categories.
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Gallium Nitride Gan
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Author : Farid Medjdoub
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Gallium Nitride Gan written by Farid Medjdoub and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Gan Based Two Dimensional Electron Devices
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Author : M. S. Shur
language : en
Publisher:
Release Date : 1998
Gan Based Two Dimensional Electron Devices written by M. S. Shur and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.
We discuss the properties of the two dimensional (2D) electron gas at AlGaN/GaN heterointerface. The density of the 2D gas is affected by piezoelectric effects and by doping levels in both AlGaN and GaN layers. The record vatues of the sheet carrier density have been achieved wfth sheet electron densities of the two-dimensional electron gas on the order of 1.5 x 10(exp13)/cm2 and the sheet carrier concentration in the surface heterostructure channel as high as 4 x 10(exp13)/cm2. At high electron concentration, electrons are divided between the 2D and 3D states, and this division affects the electron mobility in the channeL Optical polar scattering, impurity scattering, and piezoelectric scattering limit the mobility. The largest electron mobility was observed in AIGaN/GaN heterostructures grown on SiC. At room temperature, the mobility is over 2,000 cm2/V-s; at cryogenic ten1peratures, the highest n%obdity is over 10,000 cm2/V-s. These values are high enough for the observation of the Quantum Hall Effect. Multichannel 2D electron structures are being developed that will allow us to achieve a much higher current density and much higher power.
Electrical Characterization Of Aigan Gan Modfet
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Author : Pouya Valizadeh
language : en
Publisher:
Release Date : 2005
Electrical Characterization Of Aigan Gan Modfet written by Pouya Valizadeh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.