Electrical Characterization Of Aigan Gan Modfet
DOWNLOAD
Download Electrical Characterization Of Aigan Gan Modfet PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Electrical Characterization Of Aigan Gan Modfet book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Fabrication And Electrical Characterization Of Algan Gan Heterostructures
DOWNLOAD
Author : Michael Anasarah Awaah
language : en
Publisher:
Release Date : 2006
Fabrication And Electrical Characterization Of Algan Gan Heterostructures written by Michael Anasarah Awaah and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Gallium nitride categories.
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors
DOWNLOAD
Author : Peter Javorka
language : en
Publisher:
Release Date : 2004
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors written by Peter Javorka and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Gan Based Materials And Devices
DOWNLOAD
Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Gan Transistors For Efficient Power Conversion
DOWNLOAD
Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2014-09-15
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-09-15 with Science categories.
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Characterization And Reliability Of Algan Gan High Electron Mobility Transistors
DOWNLOAD
Author : Erica Ann Douglas
language : en
Publisher:
Release Date : 2011
Characterization And Reliability Of Algan Gan High Electron Mobility Transistors written by Erica Ann Douglas and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact.
Power Gan Devices
DOWNLOAD
Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Gallium Nitride Based Hemt Devices Modeling And Performance Characterization
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 2008
Gallium Nitride Based Hemt Devices Modeling And Performance Characterization written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Electrical Characterization Of Aigan Gan Modfet
DOWNLOAD
Author : Pouya Valizadeh
language : en
Publisher:
Release Date : 2005
Electrical Characterization Of Aigan Gan Modfet written by Pouya Valizadeh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Gan Transistor Modeling For Rf And Power Electronics
DOWNLOAD
Author : Yogesh Singh Chauhan
language : en
Publisher: Elsevier
Release Date : 2024-05-31
Gan Transistor Modeling For Rf And Power Electronics written by Yogesh Singh Chauhan and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-05-31 with Technology & Engineering categories.
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed
Vlsi Microwave And Wireless Technologies
DOWNLOAD
Author : Brijesh Mishra
language : en
Publisher: Springer Nature
Release Date : 2022-09-03
Vlsi Microwave And Wireless Technologies written by Brijesh Mishra and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-09-03 with Technology & Engineering categories.
This book comprises the proceedings of the International Conference on VLSI & Microwave and Wireless Technologies (ICVMWT-2021). The book includes peer-reviewed papers on the core technological developments in emerging fields like wireless communication, RF microwave/radar, VLSI, optical communication, etc. The book will serve as a valuable reference resource for academics and researchers across the globe.