Characterization And Reliability Of Algan Gan High Electron Mobility Transistors
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Characterization And Reliability Of Algan Gan High Electron Mobility Transistors
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Author : Erica Ann Douglas
language : en
Publisher:
Release Date : 2011
Characterization And Reliability Of Algan Gan High Electron Mobility Transistors written by Erica Ann Douglas and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact.
Reliability Assessment Of Gan Hemts On Si Substrate With Ultra Short Gate Dedicated To Power Applications At Frequency Above 40 Ghz
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Author : Hadhemi Lakhdhar
language : en
Publisher:
Release Date : 2017
Reliability Assessment Of Gan Hemts On Si Substrate With Ultra Short Gate Dedicated To Power Applications At Frequency Above 40 Ghz written by Hadhemi Lakhdhar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
This Ph.D. work focuses on the reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on silicon substrate dedicated to power applications at frequency above 40GHz. It was carried out within IMS Bordeaux and IEMN Lille laboratories.This work initially compares AlGaN/GaN HEMTs grown by MOCVD with those grown using MBE, through electrical characterization.In particular, the device geometry impact on the device performances has been studies by static electrical characterization.Step-stress experiments are performed to investigate reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on Si substrate. A methodology based on a sequence of step stress tests has been defined for in-situ diagnosis of a permanent degradation and of a degradation which is identified by a drain current transient occurring during each step of the ageing sequence . The same stress conditions were applied on HEMTs with different geometries. It is found no evolution of the drain current during non stressful steps. The value of the critical degradation voltage beyond which the stress drain current starts to decrease significantly is also found dependent on the stress bias conditions, the gate-drain distance and the gate length. Moreover, the safe operating area of this technology has been determined.
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors
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Author : Peter Javorka
language : en
Publisher:
Release Date : 2004
Fabrication And Characterization Of Algan Gan High Electron Mobility Transistors written by Peter Javorka and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
Determination Of Semiconductor Device Reliability Through Electrical And Optical Characterization And Stressing
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Author : David James Cheney
language : en
Publisher:
Release Date : 2012
Determination Of Semiconductor Device Reliability Through Electrical And Optical Characterization And Stressing written by David James Cheney and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
Since some defects merely affect performance and notnecessarily reliability, the ultimate goal is to provide a tool that will help identify the correlation between defects and reliability. AlGaN/GaN High Electron Mobility Transistors (HEMTs) were electrically stressed under on-state (VG = 0), off-state (VG
Dielectric Reliability In High Voltage Gan Metal Insulator Semiconductor High Electron Mobility Transistors
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Author : Shireen M. Warnock
language : en
Publisher:
Release Date : 2017
Dielectric Reliability In High Voltage Gan Metal Insulator Semiconductor High Electron Mobility Transistors written by Shireen M. Warnock and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
As the demand for more energy-efficient electronics increases, GaN has emerged as a promising transistor material candidate for high-voltage power management applications. The AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) constitutes the most suitable device structure for this application as it offers lower gate leakage than its HEMT counterpart. GaN has excellent material properties, but there are still many challenges to overcome before its widespread commercial deployment. Time-dependent dielectric breakdown (TDDB), a catastrophic condition arising after prolonged high-voltage gate stress, is a particularly important concern. This thesis investigates this crucial reliability issue in depth. Using a robust characterization strategy, we have studied not only the dielectric breakdown behavior in GaN MIS-HEMTs but also the evolution of the device subthreshold characteristics in the face of high bias stress. This allows us to work towards understanding on a more physical level the underlying degradation behind dielectric breakdown in order to inform future device lifetime models. We begin by looking at positive gate stress TDDB, a classic condition studied in the silicon CMOS community for many years. In order to understand the impact of TDDB, we must also understand how transient degradation effects such as threshold voltage (VT) shift may impact our results and ensure we can disentangle the permanent degradation associated with TDDB. With the foundational understanding of TDDB we establish under these positive gate stress conditions, we turn our attention to OFF-state stress which is a more relevant stress condition that mimics the most common state of these GaN power switching transistors in power management circuits. In order to develop accurate lifetime models for GaN MIS-HEMTs, we show that much care must be taken to ensure that device lifetime does not become distorted by transient trapping-related degradation effects. It is also crucial to have a physics-based lifetime model that gives confidence in making lifetime projections from data collected in the span of hours to lifetime estimations on the order of many years.
Reliability Of Gan High Electron Mobility Transistors On Silicon Substrates
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Author : Sefa Demirtas
language : en
Publisher:
Release Date : 2009
Reliability Of Gan High Electron Mobility Transistors On Silicon Substrates written by Sefa Demirtas and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
GaN High Electron Mobility Transistors are promising devices for high power and high frequency applications such as cellular base stations, radar and wireless network systems, due to the high bandgap and high breakdown field of GaN. However, their reliability is the main hindrance to the deployment of these transistors in a wide scale. In this study, we have investigated the reliability of GaN HEMTs grown on Si substrates. The large lattice and thermal mismatch between GaN and Si adds an additional reliability concern as compared to conventional substrates such as SiC and sapphire. We have performed systematic electrical stress experiments to understand the physics of degradation in these devices. Relevant device parameters are recorded continuously during these stress tests by a benign characterization suite. We conclude from these experiments that high voltage stress conditions are more effective in degrading the device than high current conditions. High voltage stress is found to impact the device in two different ways. The first is increased trapping in the large number of traps in the highly mismatched device structure even before any stress. The second is through the converse piezoelectric effect discussed by Joh et al. for GaN-on-SiC devices. We also have found evidence that these two mechanisms are connected. We have used UV illumination to enhance detrapping and shown that trapped electrons screen the electric field in the device and increase the critical voltage at which gate current degrades.
Reliability
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Author :
language : en
Publisher:
Release Date : 2012
Reliability written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
Deep Electrical Characterization And Modeling Of Parasitic Effects And Degradation Mechanisms Of Algan Gan Hemts On Sic Substrates
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Author : Mehdi Rzin
language : en
Publisher:
Release Date : 2015
Deep Electrical Characterization And Modeling Of Parasitic Effects And Degradation Mechanisms Of Algan Gan Hemts On Sic Substrates written by Mehdi Rzin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
This thesis is in the framework of two projects: ReAGaN and Extreme GaN withindustrials (UMS, Serma Technologies, Thales TRT) and academics (LEPMI, LAAS andUniversity of Bristol).The studied AlGaN/GaN HEMTs are provided by the society United MonolithicSemiconductors (UMS) from the GH50 and GH25 GaN processes that were qualified duringthis thesis. Many devices were submitted to high temperature accelerated life tests by UMSand characterized at IMS laboratory to study the parasitic effects and degradationsmechanisms that are limiting the electrical reliability of GaN based HEMTs technology.The first chapter gives an overview of the basics of GaN based high electron mobilitytransistors (HEMTs). Gallium Nitride material features are reviewed as well as substratessuited for GaN based devices. GaN market in Europe and the main industrial actors are listed.Furthermore, the structure and operation of GaN based HEMTs are described. In the last part,the two UMS GaN processes are described.The second chapter presents the life tests that are used for reliability studies. State of theart of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs is given.Furthermore, the ReAGaN project in which the main part of this thesis is involved isdescribed. The electrical characterization techniques used at IMS during this thesis arepresented.The third chapter is divided into four case studies; three case studies are in theframework of ReAGaN project and the fourth one in the Extreme GaN project. In the firstcase study, we investigate the conduction mechanisms inducing the leakage current inAlGaN/GaN HEMTs issued from GH50 process. The second case study is dedicated to thestudy of an electrical parasitic effect that appears on the Schottky diode forward characteristicafter temperature accelerated life tests. In the third case study, we study the influence of Almole fraction on the DC electrical parameters of AlGaN/GaN HEMTs. The last case studyconsists in the determination of the limits and safe operating area (SOA) of UMS GH25 GaNHEMTs by carrying out the two and three terminal breakdown voltages measurements.
Advanced Algan Gan Hemt Technology Design Fabrication And Characterization
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Author : Abel Fontserè Recuenco
language : en
Publisher:
Release Date : 2014
Advanced Algan Gan Hemt Technology Design Fabrication And Characterization written by Abel Fontserè Recuenco and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its voltage blocking capability, operation temperature and switching frequency. In this sense, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) devices have the potential to make this change possible. The unique combination of the high-breakdown field, the high-channel electron mobility of the two dimensional electron gas (2DEG), and high-temperature of operation has attracted enormous interest from social, academia and industry and in this context this PhD dissertation has been made. This thesis has focused on improving the device performance through the advanced design, fabrication and characterization of AlGaN/GaN HEMTs, primarily grown on Si templates. The first milestone of this PhD dissertation has been the establishment of a know-how on GaN HEMT technology from several points of view: the device design, the device modeling, the process fabrication and the advanced characterization primarily using devices fabricated at Centre de Recherche sur l'Hétéro-Epitaxie (CRHEA-CNRS) (France) in the framework of a collaborative project. In this project, the main workhorse of this dissertation was the explorative analysis performed on the AlGaN/GaN HEMTs by innovative electrical and physical characterization methods. A relevant objective of this thesis was also to merge the nanotechnology approach with the conventional characterization techniques at the device scale to understand the device performance. A number of physical characterization techniques have been imaginatively used during this PhD determine the main physical parameters of our devices such as the morphology, the composition, the threading dislocations density, the nanoscale conductive pattern and others. The conductive atomic force microscopy (CAFM) tool have been widely described and used to understand the conduction mechanisms through the AlGaN/GaN Ohmic contact by performing simultaneously topography and electrical conductivity measurements. As it occurs with the most of the electronic switches, the gate stack is maybe the critical part of the device in terms of performance and longtime reliability. For this reason, how the AlGaN/GaN HEMT gate contact affects the overall HEMT behaviour by means of advanced characterization and modeling has been intensively investigated. It is worth mentioning that the high-temperature characterization is also a cornerstone of this PhD. It has been reported the elevated temperature impact on the forward and the reverse leakage currents for analogous Schottky gate HEMTs grown on different substrates: Si, sapphire and free-standing GaN (FS-GaN). The HEMT' forward-current temperature coefficients (T̂a) as well as the thermal activation energies have been determined in the range of 25-300 oC. Besides, the impact of the elevated temperature on the Ohmic and gate contacts has also been investigated. The main results of the gold-free AlGaN/GaN HEMTs high-voltage devices fabricated with a 4 inch Si CMOS compatible technology at the clean room of the CNM in the framework of the industrial contract with ON semiconductor were presented. We have shown that the fabricated devices are in the state-of-the-art (gold-free Ohmic and Schottky contacts) taking into account their power device figure-of-merit ((VB̂2)/Ron) of 4.05×10̂8 W/cm̂2. Basically, two different families of AlGaN/GaN-on-Si MIS-HEMTs devices were fabricated on commercial 4 inch wafers: (i) using a thin ALD HfO2 (deposited on the CNM clean room) and (ii) thin in-situ grown Si3N4, as a gate insulator (grown by the vendor). The scientific impact of this PhD in terms of science indicators is of 17 journal papers (8 as first author) and 10 contributions at international conferences.
Optimization And Characterization Of Gan Based High Electron Mobility Transistors
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Author : Haifeng Sun
language : en
Publisher:
Release Date : 2012-01
Optimization And Characterization Of Gan Based High Electron Mobility Transistors written by Haifeng Sun and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-01 with categories.