Reliability Assessment Of Gan Hemts On Si Substrate With Ultra Short Gate Dedicated To Power Applications At Frequency Above 40 Ghz
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Reliability Assessment Of Gan Hemts On Si Substrate With Ultra Short Gate Dedicated To Power Applications At Frequency Above 40 Ghz
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Author : Hadhemi Lakhdhar
language : en
Publisher:
Release Date : 2017
Reliability Assessment Of Gan Hemts On Si Substrate With Ultra Short Gate Dedicated To Power Applications At Frequency Above 40 Ghz written by Hadhemi Lakhdhar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
This Ph.D. work focuses on the reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on silicon substrate dedicated to power applications at frequency above 40GHz. It was carried out within IMS Bordeaux and IEMN Lille laboratories.This work initially compares AlGaN/GaN HEMTs grown by MOCVD with those grown using MBE, through electrical characterization.In particular, the device geometry impact on the device performances has been studies by static electrical characterization.Step-stress experiments are performed to investigate reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on Si substrate. A methodology based on a sequence of step stress tests has been defined for in-situ diagnosis of a permanent degradation and of a degradation which is identified by a drain current transient occurring during each step of the ageing sequence . The same stress conditions were applied on HEMTs with different geometries. It is found no evolution of the drain current during non stressful steps. The value of the critical degradation voltage beyond which the stress drain current starts to decrease significantly is also found dependent on the stress bias conditions, the gate-drain distance and the gate length. Moreover, the safe operating area of this technology has been determined.
Effects Of Gate Stress And Parasitic Package Inductance On The Reliability Of Gan Hemts
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Author : Cheikh Abdoulahi Tine
language : en
Publisher:
Release Date : 2017
Effects Of Gate Stress And Parasitic Package Inductance On The Reliability Of Gan Hemts written by Cheikh Abdoulahi Tine and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Gallium nitride categories.
Recent advances in the development of gallium nitride (GaN) high electron mobility transistor (HEMT) have shown promising results in the application of high frequency power conversion techniques. GaN transistors are emerging as a credible alternative to silicon (Si) devices in multiple power conversion applications. This is mainly because the characteristics of GaN offer higher electron mobility, electron velocity, and higher breakdown voltage compared to (Si) devices. In spite of the promising attributes offered by GaN devices, significant technological readiness level challenges remain, in order for the technology to be adopted pervasively into the market. These challenges relate to the reliability of the material both at the device-physics level, and at the circuit-implementation level. This thesis presents detailed studies on some of the circuit-level reliability phenomena affecting GaN technology. These studies will offer a better understanding of the limitations associated with GaN so that the technology's beneficial aspects can be leveraged. The first reliability investigation performed was related to a comparison of two 600 V GaN HEMTs based on the same die, however packaged in two different configurations. In order to characterize the performance of the GaN HEMT, a realistic behavioral simulation model was developed in this thesis. The model takes into consideration both the static and dynamic characteristics of the HEMT including drain current variations with respect to gate voltage and drain voltage, ON resistance, intrinsic capacitances, and reverse recovery current and charge. The model was also integrated with values for the per-terminal parasitic package inductances. These values were obtained through empirical measurement. The modeled transistor was then simulated in a converter to analyze the overall performance of the system. Experimental results verified the results obtained by the model. This study thus presents a framework to project and assess the effect of each parasitic inductance on the performance of next generation GaN devices. In the second reliability study, the effect of gate-stress on the performance of normally-off GaN HEMT devices in a boost converter was investigated. The converter's efficiency, output voltage stability, and gate current were evaluated in order to scrutinize the failure mechanisms of pGaN gated lateral GaN devices under high gate stress. It was observed that the transient overshoot of the gate voltage during turn-on becomes switching frequency-dependent once the device has suffered sufficient degradation, leading to a marked decline in converter performance. This observation has not been reported in the previous literature. This improved understanding may allow mitigation of degradation mechanisms in GaN at the fabrication, packaging, and circuit implementation level. The results of this thesis are beneficial in two ways. First it offers insights into the safe and reliable implementation of GaN devices at the circuits-level, thus obviating the need to trade device performance for device safety. Secondly, the gate-stressing investigation unveils degradation characteristics that are of critical importance to the design and fabrication of next generation GaN devices.
Reliability And Failure Analysis Of Gan On Si Power Devices
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Author : Wen Yang
language : en
Publisher:
Release Date : 2021
Reliability And Failure Analysis Of Gan On Si Power Devices written by Wen Yang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
Wide bandgap power semiconductor devices, especially Gallium Nitride (GaN) high electron mobility transistors (HEMTs), have gained a lot of attention for high power applications due to their low on-resistance and high switching speed compared to their silicon counterparts. However, the reliability and failure issues related to dynamic performance, gate reliability, and electrostatic discharge have limited the wide applications of GaN power devices. This dissertation presents a systematic study of reliability and failure analysis of GaN-on-Si power devices. Firstly, the correlation between the physical trap mechanisms and the dynamic on-resistance (R[subscript on]) degradation has been investigated using a multi-frequency C-V measurement during pulse-mode stress. The experimental results indicate that the deep-level traps originated from the buffer layer play a dominant role in the dynamic R[subscript on] degradation. Secondly, the Si substrate in GaN-on-Si lateral power devices can be used as an independent contact termination rather than a thermal cooling pad. Therefore, the substrate bias effect in dynamic R[subscript on] and Gate Charge (Q[subscript g]) is necessary to explore both conduction and switching loss in GaN-based converter. A reverse dual polarity (RDP) substrate pulse technique has been developed to mitigate the dynamic R[subscript on] degradation. Thirdly, the gate reliability issues, including Time-dependent dielectric breakdown (TDDB), and Bias Temperature Instability (BTI) have been explored to improve the current capability. The physical model of TDDB in GaN power devices has been established by applying the substrate biases. And three phases of threshold voltage degradation have been presented under Negative Bias Temperature Instability stress. Lastly, the ESD characteristics of GaN power devices are considered for the development of a monolithic GaN-on-Si platform. The breakdown mechanisms under ESD stress have been comprehensively studied using Transmission Line Pulse (TLP) and Very-fast Transmission Line Pulse (VFTLP) measurements.
Wide Bandgap Based Devices
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Author : Farid Medjdoub
language : en
Publisher: MDPI
Release Date : 2021-05-26
Wide Bandgap Based Devices written by Farid Medjdoub and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-05-26 with Technology & Engineering categories.
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Nano Semiconductors
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Author : Krzysztof Iniewski
language : en
Publisher: CRC Press
Release Date : 2018-09-03
Nano Semiconductors written by Krzysztof Iniewski and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Power Gan Devices
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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Algan Gan Hemt Power Amplifiers With Optimized Power Added Efficiency For X Band Applications
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Author : Jutta Kühn
language : en
Publisher: KIT Scientific Publishing
Release Date : 2011
Algan Gan Hemt Power Amplifiers With Optimized Power Added Efficiency For X Band Applications written by Jutta Kühn and has been published by KIT Scientific Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Power amplifiers categories.
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Gan Transistors For Efficient Power Conversion
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Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2019-08-12
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-12 with Science categories.
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Reliability Of W Band Inain Gan High Electron Mobility Transistors
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Author : Yufei Wu (Ph. D.)
language : en
Publisher:
Release Date : 2017
Reliability Of W Band Inain Gan High Electron Mobility Transistors written by Yufei Wu (Ph. D.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
AlGaN/GaN High Electron Mobility Transistors (HEMTs) have enjoyed tremendous market growth in RF power amplifiers over the past decades. In the quest for enhancing the operating frequency of GaN HEMTs, there has been a great effort to scale down the gate length. Maintaining acceptable short-channel effects requires shrinking the barrier thickness at the same time. However, a limitation exists since there is a minimum barrier thickness that is needed to obtain a sufficiently high two-dimensional electron gas density. One possible solution to this problem is the use of a new barrier material, i.e., InAlN. Due to its high spontaneous polarization, if InAlN is used as a barrier material in GaN HEMTs, a much smaller layer thickness is required compared with conventional HEMTs. This enables further barrier thickness scaling and therefore gate length scaling and a higher frequency response. However, as a relatively new structure, reliability studies of InAlN/GaN HEMTs are still lacking. Solid reliability is essential before the wide commercial deployment of this new technology. This thesis investigates the most relevant degradation mechanisms under important stress regimes, aiming at building a comprehensive understanding of InAIN/GaN HEMT reliability. Through investigating various voltage, current, and temperature stress levels, we have identified one recoverable degradation mechanism as well as three permanent degradation mechanisms. Under high drain voltage, hot-electron trapping results in temporary drain current decrease and drain resistance increase. In addition, under high drain voltage but relatively low drain current level, permanent negative threshold voltage shift and drain current increase have been observed. We attribute the phenomena to dehydrogenation of pre-existing defects in GaN channel by hot electrons. Under high positive gate bias, defect generation in the AIN interlayer due to high electric field across AIN has proven to be responsible for the observed gate leakage current increase. Also, under high-power stress conditions, positive threshold voltage shift and maximum drain current decrease have been consistently observed. We verified through both thermal stress experiments and Transmission Electron Microscopy (TEM) analysis that Schottky gate sinking is the cause. This work provides fundamental understanding of potential reliability concerns in InAlN/GaN HEMTs and is essential in accelerating the future commercialization of this promising technology.
Advanced Microlithography Technologies
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Author : Yangyuan Wang
language : en
Publisher: SPIE-International Society for Optical Engineering
Release Date : 2005
Advanced Microlithography Technologies written by Yangyuan Wang and has been published by SPIE-International Society for Optical Engineering this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.
Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.