Wide Bandgap Based Devices
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Wide Energy Bandgap Electronic Devices
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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003
Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.
A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.
Wide Bandgap Semiconductor Based Electronics
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Author : F. Ren
language : en
Publisher:
Release Date : 2020
Wide Bandgap Semiconductor Based Electronics written by F. Ren and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with TECHNOLOGY & ENGINEERING categories.
Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas.
Wide Bandgap Based Devices
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Author : Farid Medjdoub
language : en
Publisher: MDPI
Release Date : 2021-05-26
Wide Bandgap Based Devices written by Farid Medjdoub and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-05-26 with Technology & Engineering categories.
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Characterization Of Wide Bandgap Power Semiconductor Devices
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Author : Fei (Fred) Wang
language : en
Publisher:
Release Date : 2018
Characterization Of Wide Bandgap Power Semiconductor Devices written by Fei (Fred) Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with TECHNOLOGY & ENGINEERING categories.
This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.
Wide Bandgap Semiconductors
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Author : Kiyoshi Takahashi
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-04-12
Wide Bandgap Semiconductors written by Kiyoshi Takahashi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Technology & Engineering categories.
The p–n junction was invented in the ?rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e?orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that “synthesis of high quality GaN crystals would eventually enable p-type doping” and in 1989 he succeeded in fabricating the world’s ?rst GaN p–n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey ‘from the nitride wilderness’ to the ?rst experimental results of blue emission from GaN p–n junctions: Japan’s major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p–n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti?c, industrial and social impli- tions.
Ultra Wide Bandgap Semiconductor Materials
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Author : Meiyong Liao
language : en
Publisher: Elsevier
Release Date : 2019-06-18
Ultra Wide Bandgap Semiconductor Materials written by Meiyong Liao and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-06-18 with Technology & Engineering categories.
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Wide Bandgap Power Semiconductor Packaging
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Author : Katsuaki Suganuma
language : en
Publisher: Woodhead Publishing
Release Date : 2018-05-28
Wide Bandgap Power Semiconductor Packaging written by Katsuaki Suganuma and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-28 with Technology & Engineering categories.
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. - Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance - Provides the latest research on potential solutions, with an eye towards the end goal of system integration - Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates
Gan Based Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Optoelectronic Devices
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Author : M Razeghi
language : en
Publisher: Elsevier
Release Date : 2004
Optoelectronic Devices written by M Razeghi and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Wide Bandgap Semiconductor Based Micro Nano Devices
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Author : Jung-Hun Seo
language : en
Publisher: MDPI
Release Date : 2019-04-25
Wide Bandgap Semiconductor Based Micro Nano Devices written by Jung-Hun Seo and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-04-25 with Technology & Engineering categories.
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.