Reliability Of W Band Inain Gan High Electron Mobility Transistors

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Reliability Of W Band Inain Gan High Electron Mobility Transistors

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Author : Yufei Wu (Ph. D.)
language : en
Publisher:
Release Date : 2017

Reliability Of W Band Inain Gan High Electron Mobility Transistors written by Yufei Wu (Ph. D.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.

AlGaN/GaN High Electron Mobility Transistors (HEMTs) have enjoyed tremendous market growth in RF power amplifiers over the past decades. In the quest for enhancing the operating frequency of GaN HEMTs, there has been a great effort to scale down the gate length. Maintaining acceptable short-channel effects requires shrinking the barrier thickness at the same time. However, a limitation exists since there is a minimum barrier thickness that is needed to obtain a sufficiently high two-dimensional electron gas density. One possible solution to this problem is the use of a new barrier material, i.e., InAlN. Due to its high spontaneous polarization, if InAlN is used as a barrier material in GaN HEMTs, a much smaller layer thickness is required compared with conventional HEMTs. This enables further barrier thickness scaling and therefore gate length scaling and a higher frequency response. However, as a relatively new structure, reliability studies of InAlN/GaN HEMTs are still lacking. Solid reliability is essential before the wide commercial deployment of this new technology. This thesis investigates the most relevant degradation mechanisms under important stress regimes, aiming at building a comprehensive understanding of InAIN/GaN HEMT reliability. Through investigating various voltage, current, and temperature stress levels, we have identified one recoverable degradation mechanism as well as three permanent degradation mechanisms. Under high drain voltage, hot-electron trapping results in temporary drain current decrease and drain resistance increase. In addition, under high drain voltage but relatively low drain current level, permanent negative threshold voltage shift and drain current increase have been observed. We attribute the phenomena to dehydrogenation of pre-existing defects in GaN channel by hot electrons. Under high positive gate bias, defect generation in the AIN interlayer due to high electric field across AIN has proven to be responsible for the observed gate leakage current increase. Also, under high-power stress conditions, positive threshold voltage shift and maximum drain current decrease have been consistently observed. We verified through both thermal stress experiments and Transmission Electron Microscopy (TEM) analysis that Schottky gate sinking is the cause. This work provides fundamental understanding of potential reliability concerns in InAlN/GaN HEMTs and is essential in accelerating the future commercialization of this promising technology.

Reliability Of Gan High Electron Mobility Transistors On Silicon Substrates

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Author : Sefa Demirtas
language : en
Publisher:
Release Date : 2009

Reliability Of Gan High Electron Mobility Transistors On Silicon Substrates written by Sefa Demirtas and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.

GaN High Electron Mobility Transistors are promising devices for high power and high frequency applications such as cellular base stations, radar and wireless network systems, due to the high bandgap and high breakdown field of GaN. However, their reliability is the main hindrance to the deployment of these transistors in a wide scale. In this study, we have investigated the reliability of GaN HEMTs grown on Si substrates. The large lattice and thermal mismatch between GaN and Si adds an additional reliability concern as compared to conventional substrates such as SiC and sapphire. We have performed systematic electrical stress experiments to understand the physics of degradation in these devices. Relevant device parameters are recorded continuously during these stress tests by a benign characterization suite. We conclude from these experiments that high voltage stress conditions are more effective in degrading the device than high current conditions. High voltage stress is found to impact the device in two different ways. The first is increased trapping in the large number of traps in the highly mismatched device structure even before any stress. The second is through the converse piezoelectric effect discussed by Joh et al. for GaN-on-SiC devices. We also have found evidence that these two mechanisms are connected. We have used UV illumination to enhance detrapping and shown that trapped electrons screen the electric field in the device and increase the critical voltage at which gate current degrades.

Investigation Of Electrical Characteristics And Reliability In Gan Based High Electron Mobility Transistors

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Author :
language : en
Publisher:
Release Date : 2015

Investigation Of Electrical Characteristics And Reliability In Gan Based High Electron Mobility Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.

Dielectric Reliability In High Voltage Gan Metal Insulator Semiconductor High Electron Mobility Transistors

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Author : Shireen M. Warnock
language : en
Publisher:
Release Date : 2017

Dielectric Reliability In High Voltage Gan Metal Insulator Semiconductor High Electron Mobility Transistors written by Shireen M. Warnock and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.

As the demand for more energy-efficient electronics increases, GaN has emerged as a promising transistor material candidate for high-voltage power management applications. The AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) constitutes the most suitable device structure for this application as it offers lower gate leakage than its HEMT counterpart. GaN has excellent material properties, but there are still many challenges to overcome before its widespread commercial deployment. Time-dependent dielectric breakdown (TDDB), a catastrophic condition arising after prolonged high-voltage gate stress, is a particularly important concern. This thesis investigates this crucial reliability issue in depth. Using a robust characterization strategy, we have studied not only the dielectric breakdown behavior in GaN MIS-HEMTs but also the evolution of the device subthreshold characteristics in the face of high bias stress. This allows us to work towards understanding on a more physical level the underlying degradation behind dielectric breakdown in order to inform future device lifetime models. We begin by looking at positive gate stress TDDB, a classic condition studied in the silicon CMOS community for many years. In order to understand the impact of TDDB, we must also understand how transient degradation effects such as threshold voltage (VT) shift may impact our results and ensure we can disentangle the permanent degradation associated with TDDB. With the foundational understanding of TDDB we establish under these positive gate stress conditions, we turn our attention to OFF-state stress which is a more relevant stress condition that mimics the most common state of these GaN power switching transistors in power management circuits. In order to develop accurate lifetime models for GaN MIS-HEMTs, we show that much care must be taken to ensure that device lifetime does not become distorted by transient trapping-related degradation effects. It is also crucial to have a physics-based lifetime model that gives confidence in making lifetime projections from data collected in the span of hours to lifetime estimations on the order of many years.

Reliability Study Of Gan Based High Electron Mobility Transistors

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Author : Lu Liu
language : en
Publisher:
Release Date : 2013

Reliability Study Of Gan Based High Electron Mobility Transistors written by Lu Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.

In addition, temperature dependent subthreshold slope measurement was developed to study the effect of off-state electrical stress on the trap densities and two traps with different activation energies at temperature range of 300-493K and 493-573K were identified. Finally, The laser micromachining of SiC by 193nm ArF excimer laser produced much higher etch rates (229-870 ... m/min) than conventional dry etching (0.2-1.3 ... m/min) and the via entry can be tapered to facilitate subsequent metallization.

Reliability

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Author :
language : en
Publisher:
Release Date : 2012

Reliability written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.

Characterization And Reliability Of Algan Gan High Electron Mobility Transistors

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Author : Erica Ann Douglas
language : en
Publisher:
Release Date : 2011

Characterization And Reliability Of Algan Gan High Electron Mobility Transistors written by Erica Ann Douglas and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.

High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact.

Dielectric Reliability In Gan Metal Insulator Semiconductor High Electron Mobility Transistors

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Author : Ethan S. Lee
language : en
Publisher:
Release Date : 2018

Dielectric Reliability In Gan Metal Insulator Semiconductor High Electron Mobility Transistors written by Ethan S. Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with categories.

GaN Metal Insulator Semiconductor High Electron Mobility Transistors (GaN MIS-HEMTs) show excellent promise as high voltage power transistors that can operate efficiently at high temperatures and frequencies. However, current GaN technology faces several obstacles, one of which is Time-Dependent Dielectric Breakdown (TDDB) of the gate dielectric. Under prolonged electrical stress, the gate dielectric suffers a catastrophic breakdown that renders the transistor useless. Understanding the physics behind gate dielectric breakdown and accurately estimating the average time to failure of the dielectric are of critical importance. TDDB is conventionally studied under DC conditions. However, as actual device operation in power circuits involves rapid switching between on and off states, it is important to determine if estimations done from DC stress results are accurate. Due to the rich dynamics of the GaN MIS-HEMT system such as electron trapping and carrier accumulation at the dielectric/AlGaN interface, unaccounted physics might be introduced under AC stress that may cause error in DC estimation. To this end, we characterize TDDB behavior of GaN MIS-HEMTs at both DC stress conditions and more accurate AC stress conditions. We find that TDDB behavior is improved for AC stress compared to DC stress conditions at high stress frequencies. At 100 kHz, the average dielectric breakdown time is twice the average dielectric breakdown time under DC stress conditions. Furthermore, the impact of tensile mechanical stress on TDDB under DC stress is investigated. This is an important concern because of the piezoelectric nature of GaN and the substantial lattice mismatch between Si, GaN and AlGaN that results in high mechanical strain in the active portion of the device. If mechanical stress significantly impacts TDDB, designers will have to work with further constraints to ensure minimal stress across the dielectric. To address this, we have carried out measurements of TDDB under [epsilon] = 0.29% tensile strain. We find that TDDB in both the On-state and Off-state stress conditions are unaffected by this mechanical stress. Through measurements done in this thesis, we gather further insight towards understanding the physics behind TDDB. Through AC stress we find that the dynamics of the GaN MIS-HEMTs prolong dielectric breakdown times. Through mechanical stress we find that modulation of the 2-Dimensional Electron Gas and dielectric bond straining have minimal impact on TDDB.

Reliability Limiting Defects In Gan A1gan High Electron Mobility Transistors

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Author : Tania Roy
language : en
Publisher:
Release Date : 2011

Reliability Limiting Defects In Gan A1gan High Electron Mobility Transistors written by Tania Roy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Electronic dissertations categories.

Power Gan Devices

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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08

Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.