Gan Based Two Dimensional Electron Devices
DOWNLOAD
Download Gan Based Two Dimensional Electron Devices PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Gan Based Two Dimensional Electron Devices book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Gan Based Two Dimensional Electron Devices
DOWNLOAD
Author : M. S. Shur
language : en
Publisher:
Release Date : 1998
Gan Based Two Dimensional Electron Devices written by M. S. Shur and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.
We discuss the properties of the two dimensional (2D) electron gas at AlGaN/GaN heterointerface. The density of the 2D gas is affected by piezoelectric effects and by doping levels in both AlGaN and GaN layers. The record vatues of the sheet carrier density have been achieved wfth sheet electron densities of the two-dimensional electron gas on the order of 1.5 x 10(exp13)/cm2 and the sheet carrier concentration in the surface heterostructure channel as high as 4 x 10(exp13)/cm2. At high electron concentration, electrons are divided between the 2D and 3D states, and this division affects the electron mobility in the channeL Optical polar scattering, impurity scattering, and piezoelectric scattering limit the mobility. The largest electron mobility was observed in AIGaN/GaN heterostructures grown on SiC. At room temperature, the mobility is over 2,000 cm2/V-s; at cryogenic ten1peratures, the highest n%obdity is over 10,000 cm2/V-s. These values are high enough for the observation of the Quantum Hall Effect. Multichannel 2D electron structures are being developed that will allow us to achieve a much higher current density and much higher power.
Handbook Of Nitride Semiconductors And Devices Gan Based Optical And Electronic Devices
DOWNLOAD
Author : Hadis Morkoç
language : en
Publisher: John Wiley & Sons
Release Date : 2009-07-30
Handbook Of Nitride Semiconductors And Devices Gan Based Optical And Electronic Devices written by Hadis Morkoç and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-07-30 with Technology & Engineering categories.
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
Design And Development Of Gan Based Vertical Transistors For Increased Power Density In Power Electronics Applications
DOWNLOAD
Author : Dong Ji
language : en
Publisher:
Release Date : 2017
Design And Development Of Gan Based Vertical Transistors For Increased Power Density In Power Electronics Applications written by Dong Ji and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
Gallium nitride (GaN)-based devices have entered the power electronics market and shown excellent progress in the medium power conversion applications. For power conversions applications > 10 kW, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, thus provides a more economical solution for high-voltage and high-current applications. Moreover, the vertical geometry is attractive for its dispersion-free performance without passivation, a phenomenon that causes high dynamic on-state resistance (R[subscript on]) in lateral geometry high electron mobility transistors (HEMTs). In this study, GaN-based vertical transistors, which include trench current aperture vertical electron transistors (CAVETs) and in-situ oxide, GaN interlayer based trench field-effect transistors (OGFETs), have been studied both theoretically and experimentally. In order to model the devices for DC and switching performances, a device/circuit hybrid simulation platform was developed based on Silvaco ATLAS. The validation of the model was obtained by calibrating it against commercially available HEMT data. Using this hybrid model, one can start with a two-dimensional (2D) drift-diffusion model of the device and build all the way up to its circuit implementation to evaluate its switching performance. The hybrid model offers an inexpensive and accurate way to project and benchmark the performance and can be extended to any GaN-based power transistors.In the experimental portion of this study, a high voltage OGFET was designed and fabricated. An OGFET shows improved characteristics owing to a 10 nm unintentionally doped (UID) GaN interlayer as the channel. A normally-off (V[subscript th] = 4 V) vertical GaN OGFET with 10 nm UID-GaN channel interlayer and 50 nm in-situ Al2O3 was successfully demonstrated and scaled for higher current operation. By using a novel double-field-plated structure for mitigating peak electric field, a higher off-state breakdown voltage over 1.4 kV was achieved with a significantly low specific on-state resistance (R[subscript on,sp]) of 2.2 m[omega] cm2. The metal-organic chemical vapor deposition (MOCVD) regrown 10 nm GaN channel interlayer enabled a channel resistance lower than 10 [omega] mm with an average channel electron mobility of 185 cm2/Vs. The fabricated large area transistor with a total area of 0.4 mm × 0.5 mm offered a breakdown voltage of 900 V and an Ron of 4.1 [omega]. Results indicate the potential of vertical GaN OGFET for greater than 1 kV range of power electronics applications.In addition to the OGFET, the CAVET with a trench gate structure was studied in this work. By taking advantage of the two-dimensional electron gas (2DEG) in the AlGaN/GaN structure, the trench CAVET can secure an even higher channel electron mobility compared to the OGFET. The first functional trench CAVET with a metal-insulator-semiconductor (MIS) gate structure was fabricated in this work with a breakdown voltage of about 225 V. With the improvement in the fabrication process, an 880 V device with an R[subscript on,sp] of 2.7 m[omega] cm2 was demonstrated. One of the notable features of the fabricated trench CAVET is that it requires a standard MOCVD growth condition for HEMT epilayers. The simplification of the growth process is a significant achievement. Finally, a regrowth-free CAVET was demonstrated and patented. The transformative approach was realized using Si ion implantation based doping compensation in the aperture.
Gallium Nitride Gan
DOWNLOAD
Author : Farid Medjdoub
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Gallium Nitride Gan written by Farid Medjdoub and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Two Dimensional Electron Transport In Gan Gaas Based Heterostructures
DOWNLOAD
Author : Hailing Cheng
language : en
Publisher: LAP Lambert Academic Publishing
Release Date : 2014-03
Two Dimensional Electron Transport In Gan Gaas Based Heterostructures written by Hailing Cheng and has been published by LAP Lambert Academic Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03 with categories.
This book is on the fundamental studies of electron transport in different 2DEG systems. Electron transport in wide range of GaN samples were studied including in a high carrier density regime where a second conductive subband channel was occupied. The spin-orbit interaction were studied in the GaN heterostructures by using the weak antilocalization measurements. We also studied the energy relaxation processes in the GaN systems to understand the power dissipation. The second topic was electron dynamics on Quantum Hall liquid in GaAs system. We were able to study the Quantum Hall liquids in their deep insulating regime by using single electron transistors. The objective was to understand the charge motions in the quantum Hall liquid in an antidot structure, a particularly important structure for possible device applications in quantum computation. We have also shown that the response associated with the motion of electrons in the bulk of the integer quantum Hall layer could be enhanced by using multiple layers. This finding led us to a magnetometer application which was demonstrated by using a heterostructure with 25 identical multiple quantum wells.
Gan Based Materials And Devices
DOWNLOAD
Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Gan Based Materials And Devices Growth Fabrication Characterization And Performance
DOWNLOAD
Author : Robert F Davis
language : en
Publisher: World Scientific
Release Date : 2004-05-07
Gan Based Materials And Devices Growth Fabrication Characterization And Performance written by Robert F Davis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-05-07 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Vertical Gan And Sic Power Devices
DOWNLOAD
Author : Kazuhiro Mochizuki
language : en
Publisher: Artech House
Release Date : 2018-04-30
Vertical Gan And Sic Power Devices written by Kazuhiro Mochizuki and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-04-30 with Technology & Engineering categories.
This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.
Iii Nitride Electronic Devices
DOWNLOAD
Author : Rongming Chu
language : en
Publisher: Academic Press
Release Date : 2019-10
Iii Nitride Electronic Devices written by Rongming Chu and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10 with Electronic apparatus and appliances categories.
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Gallium Nitride Power Devices
DOWNLOAD
Author : Hongyu Yu
language : en
Publisher: CRC Press
Release Date : 2017-07-06
Gallium Nitride Power Devices written by Hongyu Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-06 with Science categories.
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.