Mathematical Problems In Semiconductor Physics
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Mathematical Problems In Semiconductor Physics
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Author : Angelo Marcello Anile
language : en
Publisher: Springer
Release Date : 2003-12-15
Mathematical Problems In Semiconductor Physics written by Angelo Marcello Anile and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-12-15 with Science categories.
On the the mathematical aspects of the theory of carrier transport in semiconductor devices. The subjects covered include hydrodynamical models for semiconductors based on the maximum entropy principle of extended thermodynamics, mathematical theory of drift-diffusion equations with applications, and the methods of asymptotic analysis.
Mathematical Problems In Semiconductor Physics
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Author : P A Marcati
language : en
Publisher: CRC Press
Release Date : 1995-12-15
Mathematical Problems In Semiconductor Physics written by P A Marcati and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-12-15 with Science categories.
This collection of papers arises from a workshop held at the Istituto per le Applicazioni del Calcolo of the Italian CNR. The first part of the book includes the material covered by three mini-series of lectures at graduate level on some advanced mathematical topics in semiconductor physics. The second part of the book includes more specialized topics, covered by invited speakers in their individual lectures.
Mathematical Problems In Semiconductor Physics
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Author : Angelo Marcello Anile
language : en
Publisher: Springer
Release Date : 2003-12-15
Mathematical Problems In Semiconductor Physics written by Angelo Marcello Anile and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-12-15 with Science categories.
On the the mathematical aspects of the theory of carrier transport in semiconductor devices. The subjects covered include hydrodynamical models for semiconductors based on the maximum entropy principle of extended thermodynamics, mathematical theory of drift-diffusion equations with applications, and the methods of asymptotic analysis.
Mathematical Problems In Semiconductor Physics
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Author : Angelo Marcello Anile
language : en
Publisher:
Release Date : 2003
Mathematical Problems In Semiconductor Physics written by Angelo Marcello Anile and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
Physics Of Semiconductor Devices
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Author : J.-P. Colinge
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-05-08
Physics Of Semiconductor Devices written by J.-P. Colinge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-05-08 with Technology & Engineering categories.
Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.
Mathematical Problems In Semiconductor Physics
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Author : Angelo Marcello Anile
language : en
Publisher: Springer Science & Business Media
Release Date : 2003-09-16
Mathematical Problems In Semiconductor Physics written by Angelo Marcello Anile and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-09-16 with Science categories.
On the the mathematical aspects of the theory of carrier transport in semiconductor devices. The subjects covered include hydrodynamical models for semiconductors based on the maximum entropy principle of extended thermodynamics, mathematical theory of drift-diffusion equations with applications, and the methods of asymptotic analysis.
Semiconductor Equations
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Author : Peter A. Markowich
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductor Equations written by Peter A. Markowich and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Mathematics categories.
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Quasi Hydrodynamic Semiconductor Equations
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Author : Ansgar Jüngel
language : en
Publisher: Birkhäuser
Release Date : 2011-04-27
Quasi Hydrodynamic Semiconductor Equations written by Ansgar Jüngel and has been published by Birkhäuser this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-04-27 with Mathematics categories.
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Charge Transport In Low Dimensional Semiconductor Structures
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Author : Vito Dario Camiola
language : en
Publisher: Springer Nature
Release Date : 2020-03-02
Charge Transport In Low Dimensional Semiconductor Structures written by Vito Dario Camiola and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-02 with Science categories.
This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.
Mathematical And Numerical Modelling Of Heterostructure Semiconductor Devices From Theory To Programming
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Author : E.A.B. Cole
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-11-28
Mathematical And Numerical Modelling Of Heterostructure Semiconductor Devices From Theory To Programming written by E.A.B. Cole and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-11-28 with Mathematics categories.
Part of my lecturing work in the School of Mathematics at the University of Leeds involved teaching quantum mechanics and statistical mechanics to mathematics undergraduates, and also mathematical methods to undergraduate students in the School of Electronic and Electrical Engineering at the University. The subject of this book has arisen as a result of research collaboration on device modelling with members of the School of Electronic and Electrical Engineering. I wanted to write a book which would be of practical help to those wishing to learn more about the mathematical and numerical methods involved in heteroju- tion device modelling. I have introduced only a comparatively small number of t- ics, and the reader may think that other important topics should have been included. But of the topics which I have introduced, I hope that I have given the reader some practical advice concerning the implementation of the methods which are discussed. This practical advice includes demonstrating how the implementation of the me- ods may be tailored to the speci?c device being modelled, and also includes some sections of computer code to illustrate this implementation. I have also included some background theory regarding the origins of the routines.