Mechanism Of Gold Diffusion Into Silicon
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Mechanism Of Gold Diffusion Into Silicon
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Author :
language : en
Publisher:
Release Date : 1963
Mechanism Of Gold Diffusion Into Silicon written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1963 with categories.
Gold was found to diffuse into Si by a complex mechanism involving a vacancy-controlled inter stitial-substitutional equilibrium. This led to very complex diffusion concentration profiles. In analyzing the problem, a new experimental value was found for the self-diffusion coefficient of Si, 1.81 x 10 to the 4th power exp ( -112=20 kcal/RT)sq cm/sec, which compared very favorably with previous data on diffusion of Bi, Ge, and Sn in Si. The interstitial gold diffusion coefficient was found to be 2.4 x 10 to the minus 4th power exp ( -8.9=2 kcal/RT), the substitutional gold-diffusion coefficient to be 2.75 x 10 to the minus 3rd power exp ( -47=10 kcal/RT), the equilibrium-interstitial gold solubility to be 5.95 x 10 to the 24th power exp ( -58=10 kcal/RT), and the equilibrium substitutional gold solubility (Collin's data) below 1200C to be 8.15 x 10 to the 22nd power exp ( -40.6 kcal/RT).
Mechanisms Of Gold Diffusion Into Silicon
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Author : William R. Wilcox
language : en
Publisher:
Release Date : 1963
Mechanisms Of Gold Diffusion Into Silicon written by William R. Wilcox and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1963 with Gold categories.
Atomic Diffusion In Semiconductors
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Author : D. Shaw
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Atomic Diffusion In Semiconductors written by D. Shaw and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.
The Solubility And Diffusion Of Gold In Silicon
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Author : Margaret Brown
language : en
Publisher:
Release Date : 1976
The Solubility And Diffusion Of Gold In Silicon written by Margaret Brown and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1976 with categories.
Silicon Germanium And Their Alloys
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Author : Gudrun Kissinger
language : en
Publisher: CRC Press
Release Date : 2014-12-09
Silicon Germanium And Their Alloys written by Gudrun Kissinger and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-09 with Science categories.
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Diffusion In Crystalline Solids
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Author : G E Murch
language : en
Publisher: Academic Press
Release Date : 2012-12-02
Diffusion In Crystalline Solids written by G E Murch and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Science categories.
Diffusion in Crystalline Solids addresses some of the most active areas of research on diffusion in crystalline solids. Topics covered include measurement of tracer diffusion coefficients in solids, diffusion in silicon and germanium, atom transport in oxides of the fluorite structure, tracer diffusion in concentrated alloys, diffusion in dislocations, grain boundary diffusion mechanisms in metals, and the use of the Monte Carlo Method to simulate diffusion kinetics. This book is made up of eight chapters and begins with an introduction to the measurement of diffusion coefficients with radioisotopes. The following three chapters consider diffusion in materials of substantial technological importance such as silicon and germanium. Atomic transport in oxides of the fluorite structure is described, and diffusion in concentrated alloys, including intermetallic compounds, is analyzed. The next two chapters delve into diffusion along short-circuiting paths, focusing on the effect of diffusion down dislocations on the form of the tracer concentration profile. The book also discusses the mechanisms of diffusion in grain boundaries in metals by invoking considerable work done on grain-boundary structure. The last two chapters are concerned with computer simulation, paying particular attention to machine calculations and the Monte Carlo method. The book concludes by exploring the fundamental atomic migration process and presenting some state-of-the-art calculations for defect energies and the topology of the saddle surface. Students and researchers of material science will find this book extremely useful.
The Diffusion Of Gold In Silicon
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Author : Frank Alfred Huntley
language : en
Publisher:
Release Date : 1971
The Diffusion Of Gold In Silicon written by Frank Alfred Huntley and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1971 with categories.
Epitaxy Of Semiconductors
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Author : Udo W. Pohl
language : en
Publisher: Springer Nature
Release Date : 2020-07-20
Epitaxy Of Semiconductors written by Udo W. Pohl and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-07-20 with Technology & Engineering categories.
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
Intrinsic Point Defects Impurities And Their Diffusion In Silicon
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Author : Peter Pichler
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Intrinsic Point Defects Impurities And Their Diffusion In Silicon written by Peter Pichler and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Diffusion Of Reactive Molecules In Solids And Melts
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Author : Robert H. Doremus
language : en
Publisher: John Wiley & Sons
Release Date : 2001-12-03
Diffusion Of Reactive Molecules In Solids And Melts written by Robert H. Doremus and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-12-03 with Science categories.
Die Verteilung reaktiver Moleküle in Festkörpern und Schmelzen wird hier mit Hilfe eines Diffusions-Reaktions-Modells beschrieben. Klar und präzise stellt der Autor, ein anerkannter Spezialist auf diesem Gebiet, die physikalischen und mathematischen Grundlagen von Diffusionsreaktionen dar und illustriert sie am Beispiel spezieller Werkstoffe.