Mechanisms Of Transient Radiation Effects
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Mechanisms Of Transient Radiation Effects State Of The Art
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Author : V. A. J. VAN LINT
language : en
Publisher:
Release Date : 1962
Mechanisms Of Transient Radiation Effects State Of The Art written by V. A. J. VAN LINT and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1962 with categories.
Mechanisms Of Transient Radiation Effects
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Author : V. A. J. van Lint
language : en
Publisher:
Release Date : 1968
Mechanisms Of Transient Radiation Effects written by V. A. J. van Lint and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1968 with categories.
The objective of this report is to provide readers with an understanding of the interaction of nuclear radiation with matter in electronic components and devices and the resulting effects which could adversely affect their performance. This information will serve as a background for understanding transient radiation effects in electronics (TREE) and, if necessary, as a basis for making crude estimates of expected effects when no experimental data are available. Included are discussions of displacement, ionization and chemical effects, and a note on shielding requirements. For each type of effect, the steps leading from the primary interaction between the radiation and a target atom to the physical manifestation, i.e., changes in the macroscopic properties, are summarized. Some rules are provided for estimating the magnitudes of the effects, and these rules are illustrated by applying them to typical electronic devices.
Basic Mechanisms Of Transient Radiation Effects In The Thin Film Transistor
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Author : C. C. Berggren
language : en
Publisher:
Release Date : 1966
Basic Mechanisms Of Transient Radiation Effects In The Thin Film Transistor written by C. C. Berggren and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1966 with categories.
This program includes studies of active device intrinsic response and has as its broad objective the study of this intrinsic response for the majority carrier thin-film transistor. For this study fundamental solid state behavior is described in terms of active device circuit parameters and leads ultimately to radiation hard circuit design by manipulation of device design parameters.
An Investigation Of Basic Mechanisms Of Transient High Energy Radiation Effects In Insulators And Semiconductors
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Author : V. R. Honnold
language : en
Publisher:
Release Date : 1962
An Investigation Of Basic Mechanisms Of Transient High Energy Radiation Effects In Insulators And Semiconductors written by V. R. Honnold and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1962 with categories.
This work is an investigation of the basic mechanisms of transient radiation effects on insulators and semiconductors. Various alkali halide crystals were exposed to a transient high energy environment and an experimental determina tion of the time-dependent F-center information was made by optical methods. A germanium semi conductor crystal was also exposed to transient high energy radiation and the decay of excess carrier density as a function of generation rate was studied. The experimental investigations are supplemented in both areas by theoretical calculations. They include a solution of the rate equations governing F-center formation and a graphical solution for the non-linear differ ential equations governing the density of excess carriers in semiconductors. (Author).
Transient Radiation Effects
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Author : D. M. J. Compton
language : en
Publisher:
Release Date : 1963
Transient Radiation Effects written by D. M. J. Compton and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1963 with categories.
The purpose of this research program is to gain a greater understanding of the basic mechanisms of transient radiation effects in materials and components by separating them into individual physical phenomena. Each of these phenomena is then studied as a function of the type, energy, and dose rate of the radiation, and with appropriate variation of the experimental parameters. Five phenomena were studied during this research program. It is believed that most of the important manifestations of transient radiation effects produced by pulsed irradiation of an electronic circuit can be ascribed to phenomena discussed or to their combinations. In the period, most effort was placed on two programs: (1) study of the transient conductivity induced in plastic films, and (2) the development of means of measuring secondary emission from metals as a function of the angle and energy of emission. (Author).
Basic Mechanisms Of Radiation Effects In Electronic Materials And Devices
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Author :
language : en
Publisher:
Release Date : 1987
Basic Mechanisms Of Radiation Effects In Electronic Materials And Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with categories.
This report reviews the primary physical processes underlying the response of electronic materials and devices to radiation as well as the relationship of these processes to the modes of circuit degradation and failure. An overview presents brief discussions of the major radiation environments of practical interest, the interaction of radiation with solid targets, common terminology of radiation exposure, and the primary radiation effects in electronic materials, including ionization effects (radiation-induced photocurrents and space charge buildup) and atomic displacement damage effects. An emphasis is given to the problem of total-dose ionization response, primarily in metal-oxide-semiconductor (MOS) systems. In particular, a description of the basic physical phenomena underlying the complex time history of the MOS radiation response is given, and some implications of the time-dependent response for issues of radiation testing, hardness assurance and radiation response prediction are pointed out. There is also discussion on the implications of scaling down the gate oxide thickness and on the increasingly important problem of radiation-induced leakage currents. Keywords: Radiation effects, Ionizing radiation, Nuclear weapons effects, Microelectronics, Metal oxide semiconductor devices, Bipolar devices, Total dose ionization, Transient radiation, Single event upset.
Study Of Transient Radiation Effects On Microelectronics Volume I Introduction Experimental Study Digital Logic Gate Study
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Author : James P. Raymond
language : en
Publisher:
Release Date : 1965
Study Of Transient Radiation Effects On Microelectronics Volume I Introduction Experimental Study Digital Logic Gate Study written by James P. Raymond and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1965 with categories.
The purpose was to compare microcircuits of differing construction techniques to determine their relative vulnerability, to study basic radiation-induced failure mechanisms, and to relate these mechanisms to both construction technique and circuit design. Test specimens were of three basic circuit types of five different fabrication techniques. Circuit types included digital logic gates, flip-flops, and differential or digital sense amplifiers. Fabrication techniques represented monolithic, multiple-chip, thin film compatible, oxide-isolation, and thin-film hybrid. Experimental study consisted of determining the electrical circuit performance parameters, the transient response in pulsed ionizing radiation environments, and permanent degradation from exposure to a pulsed reactor neutron/gamma environment. Failure mechanisms were, when possible, related analyticall, to the characteristics of the circuit and the fabrication technique. (Author).
Mechanisms Of Radiation Effects In Electronic Materials
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Author : Victor A. Vanlint
language : en
Publisher:
Release Date :
Mechanisms Of Radiation Effects In Electronic Materials written by Victor A. Vanlint and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.
Immediate Transient Effects Of Ionizing Radiation On Some Visceral Reflex Mechanisms
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Author : Carol Marie Sidel
language : en
Publisher:
Release Date : 1967
Immediate Transient Effects Of Ionizing Radiation On Some Visceral Reflex Mechanisms written by Carol Marie Sidel and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1967 with categories.
Mechanisms Of Radiation Effects In Electronic Materials
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Author : V. A. J. Van Lint
language : en
Publisher: John Wiley & Sons
Release Date : 1980
Mechanisms Of Radiation Effects In Electronic Materials written by V. A. J. Van Lint and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1980 with Electronics categories.